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收藏High Mobility (>200 cm2 V-1 s-1) Transparent Top Gate IGZO TFTs with Oxidized Metal Gate Insulator for Enhanced Conductivity高迁移率(>200 cm² V⁻¹ s⁻¹)透明顶栅IGZO TFTs,采用氧化金属栅绝缘体以提高导电性
Sun, Hyeonjeong; Yun, Yeoeun; Hwang, Kyubin; Bang, Jiyoung; Choi, Seungmin; Lee, Seungjae; Kim, Taeyang; Choi, Suhwon; Choi, Eunsuk; Jeong, Jae Kyeong; Lee, Seung-Beck
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收藏An Ultralow Power Mixed Dimensional Heterojunction Transistor Based on the Charge Plasma pn Junction
Sul, Onejae; Seo, Hojun; Choi, Eunsuk; Kim, Sunjin; Gong, Jinsil; Bang, Jiyoung; Ju, Hyoungbeen; Oh, Sehoon; Lee, Yeonsu; Sun, Hyeonjeong; Kwon, Minjin; Kang, Kyungnam; Hong, Jinki; Yang, Eui-Hyeok; Chung, Yunchul; Lee, Seung-Beck
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