Geok Ing Ng - Publications, H-index & Citations

Geok Ing Ng

Nanyang Technological University

35H指数

342论文数

4.8K被引数

收录论文 48

发表时间

GaN-on-Si HEMTs for Low-Voltage FR2 Applications Enabled by Reactive-Sputtered n⁺⁺-GaN Ohmic Contacts Si基GaN高电子迁移率晶体管通过反应溅射n⁺⁺-GaN欧姆接触实现低电压FR2应用

IEEE Electron Device Letters

IF4.5

2026-03-30

PREAI

Yihao Zhuang; Siyu Liu; Qingyun Xie; Hanlin Xie; Tomita Kazuyoshi; Tetsu Kachi; Hiroshi Amano; Subramaniam Arulkumaran; Geok Ing Ng

GaN-on-Si HEMT Technology for mm-Wave Mobile T/R Modules Demonstrating Concurrent High Efficiency (>60%) and Low Noise (<1.2 dB)Si基GaN高电子迁移率晶体管（HEMT）技术用于毫米波移动收发（T/R）模块，展示了同时实现高效率（>60%）和低噪声（<1.2 dB）的性能。

IEEE Electron Device Letters

IF4.5

2026-01-22

PREAI

Yihao Zhuang; Siyu Liu; Pengju Cui; Viet Cuong Nguyen; Qingyun Xie; Ravikiran Lingaparthi; Hanchao Li; Hanlin Xie; Dharmarasu Nethaji; Ameera Nur; Xavier Teo Leng Seah; Stefan Degroote; Marianne Germain; K. Radhakrishnan; Geok Ing Ng

Analysis of Leakage Channel with Different Al Composition back Barriers in AlN/GaN High-Electron-Mobility Transistors on Silicon 基于硅衬底的AlN/GaN高电子迁移率晶体管中不同Al组份背栅势垒的漏电通道分析

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

IF1.9

2025-12-01

PREAI

Liu, Siyu; Zhuang, Yihao; Li, Hanchao; Cui, Pengju; Xie, Qingyun; Wang, Yue; Xie, Hanlin; Ranjan, Kumud; Ng, Geok Ing

BEOL-Compatible Amorphous Oxide Semiconductor High-Voltage Transistors Achieving BFoM Beyond the GaAs Limit 与BEOL兼容的非晶氧化物半导体高压晶体管，实现了超越GaAs限制的性能参数。

IEEE Electron Device Letters

IF4.5

2025-09-04

PREAI

Yuxuan Wang; Jiawei Xie; Wei Shi; Hanchao Li; Hanlin Xie; Dong Zhang; Chen Sun; Zijie Zheng; Yue Chen; Rui Shao; Xuanqi Chen; Geok Ing Ng; Kaizhen Han; Xiao Gong

Improved device performance in in situ SiNx/AlN/GaN MIS-HEMTs with ex situ Al2O3 passivation at elevated temperatures

APPLIED PHYSICS LETTERS

IF3.6

2025-03-01

PREAI

Dalapati, Pradip; Arulkumaran, Subramaniam; Xie, Hanlin; Ng, Geok Ing

Role of ex-situ HfO2 passivation to improve device performance and suppress X-ray-induced degradation characteristics of in-situ Si3N4/AlN/ GaN MIS-HEMTs

APPLIED SURFACE SCIENCE

IF6.9

2025-02-01

PREAI

Dalapati, Pradip; Li, Hanchao; Arulkumaran, Subramaniam; Ng, Geok Ing

Change of chemical bonding properties at SiNx/GaN/AlGaN interface with SiH4 flow rate and its impact on the carrier transport properties of MIS-diodes

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS

IF4.6

2024-09-01

PREAI

Dalapati, Pradip; Arulkumaran, Subramaniam; Mani, Dinesh; Li, Hanchao; Xie, Hanlin; Wang, Yue; Ng, Geok Ing

Variable range hopping-assisted parasitic channel leakage in AlN/GaN/AlGaN HEMTs on Si

APPLIED PHYSICS LETTERS

IF3.6

2024-07-11

PREAI

Liu, Siyu; Zhuang, Yihao; Li, Hanchao; Xie, Qingyun; Wang, Yue; Xie, Hanlin; Ranjan, Kumud; Ng, Geok Ing

Layer-transferred gallium arsenide heterojunction bipolar transistor on insulator substrate

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS

IF4.6

2023-10-01

PREAI

Khai, Loke Wan; Yue, Wang; Hanlin, Xie; Teng, Tan Hui; Shuyu, Bao; Hong, Lee Kwang; Lina, Khaw; Kian, Kenneth Lee Eng; Seng, Tan Chuan; Ing, Ng Geok; Fitzgerald, Eugene A.; Fatt, Yoon Soon

Demonstration of vertically-ordered h-BN/AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors on Si substrate

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS

IF4.6

2021-08-01

PREAI

Whiteside, Matthew; Arulkumaran, Subramaniam; Ng, Geok Ing

Phase noise reduction of a 2 μm passively mode-locked laser through hybrid III-V/silicon integration

OPTICA

IF8.5

2021-06-09

OAAI

Li, Xiang; Sia, Jia Xu Brian; Wang, Wanjun; Qiao, Zhongliang; Guo, Xin; Ng, Geok Ing; Zhang, Yu; Niu, Zhichuan; Tong, Cunzhu; Wang, Hong; Liu, Chongyang

Enhancing the piezoelectric modulus of wurtzite AlN by ion beam strain engineering 通过离子束应变工程提高纤锌矿AlN的压电模量

APPLIED PHYSICS LETTERS

IF3.6

2021-01-07

OAAI

Fiedler, Holger; Leveneur, Jerome; Mitchell, David R. G.; Arulkumaran, Subramaniam; Ng, Geok Ing; Alphones, Arokiaswami; Kennedy, John

Improved interface state density by low temperature epitaxy grown AlN for AlGaN/GaN metal-insulator-semiconductor diodes 通过低温外延生长的AlN提高了AlGaN/GaN金属-绝缘体-半导体二极管的界面态密度

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS

IF4.6

2020-12-01

PREAI

Whiteside, M.; Arulkumaran, S.; Dikme, Y.; Sandupatla, A.; Ng, G., I

Vertical GaN-on-GaN Schottky Diodes as α-Particle Radiation Sensors

MICROMACHINES

IF3

2020-05-20

OAAI

Sandupatla, Abhinay; Arulkumaran, Subramaniam; Ing, Ng Geok; Nitta, Shugo; Kennedy, John; Amano, Hiroshi

Low Voltage High-Energy α-Particle Detectors by GaN-on-GaN Schottky Diodes with Record-High Charge Collection Efficiency

SENSORS

IF3.5

2019-11-21

OAAI

Sandupatla, Abhinay; Arulkumaran, Subramaniam; Ranjan, Kumud; Ng, Geok Ing; Murmu, Peter P.; Kennedy, John; Nitta, Shugo; Honda, Yoshio; Deki, Manato; Amano, Hiroshi

High temperature characteristics of a 2 m InGaSb/AlGaAsSb passively mode-locked quantum well laser

APPLIED PHYSICS LETTERS

IF3.6

2019-06-06

OAAI

Li, Xiang; Wang, Hong; Qiao, Zhongliang; Guo, Xin; Wang, Wanjun; Sia, Jia Xu Brian; Ng, Geok Ing; Zhang, Yu; Niu, Zhichuan; Tong, Cunzhu; Liu, Chongyang

Investigation of regime switching from mode locking to Q-switching in a 2 μm InGaSb/GaAsSb quantum well laser

OPTICS EXPRESS

IF3.3

2018-03-22

OAAI

Li, Xiang; Wang, Hong; Qiao, Zhongliang; Guo, Xin; Wang, Wanjun; Ng, Geok Ing; Zhang, Yu; Xu, Yingqiang; Niu, Zhichuan; Tong, Cunzhu; Liu, Chongyang

Modal gain characteristics of a 2 μm InGaSb/AlGaAsSb passively mode-locked quantum well laser

APPLIED PHYSICS LETTERS

IF3.6

2017-12-18

OAAI

Li, Xiang; Wang, Hong; Qiao, Zhongliang; Guo, Xin; Ng, Geok Ing; Zhang, Yu; Niu, Zhichuan; Tong, Cunzhu; Liu, Chongyang