Xiaochuan Deng - Publications, H-index & Citations

Xiaochuan Deng

University of Electronic Science and Technology of China

23H指数

155论文数

1.9K被引数

收录论文 34

发表时间

Investigation and Evaluation on Surge Robustness Capability of Parallel-Connected SiC MOSFETs 对并联连接SiC MOSFET浪涌耐受能力的调查与评估

IEEE Journal of Emerging and Selected Topics in Power Electronics

IF4.9

2026-08-06

PREAI

Hexin Zhu; Xiaochuan Deng; Tengkun Luo; Xuke Yan; Xing Zeng; Xuan Li; Bo Zhang

Investigation of carrier transport mechanism in SiC FinFET with L-shaped P-shield for improving gate oxide reliability and switching performance 具有L形P屏蔽结构的SiC FinFET中载流子输运机制的探究，以改善栅氧化层可靠性和开关性能

Semiconductor Science and Technology

IF2.1

2026-05-01

PREAI

Yan, Xuke; Deng, Xiaochuan; Wang, Hao; Zeng, Xing; Li, Xuan; Zhang, Bo

Atmospheric-Neutron Effects on 1.2-kV Double Trench SiC MOSFETs 大气中子效应对1.2-kV双沟槽SiC MOSFET的影响

IEEE TRANSACTIONS ON NUCLEAR SCIENCE

IF1.9

2025-12-01

PREAI

Zeng, Xing; Deng, Xiaochuan; Yan, Xuke; Xu, Tao; Mo, Lihua; Hu, Zhiliang; Yu, Quanzhi; Li, Xuan; Zhang, Bo

Synergy of framework dynamics and crown ether chemistry in covalent organic frameworks for Na+ capture 共价有机框架中框架动力学与冠醚化学的协同作用用于Na+捕获

Chemical Engineering Journal

IF13.2

2025-11-20

PREAI

Xiaoxiang He; Jie Fan; Wanxia Ma; Zhenghua He; Yifei Shi; Binju Qing; Xiaochuan Deng; Chenghua Sun; Guowang Xu; Dandan Gao; Chaoliang Zhu

Design of radiation tolerant SiC MOSFET power devices with multi-fidelity surrogate model 基于多保真度代理模型的高抗辐射SiC MOSFET功率器件设计

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

IF2.8

2025-04-29

PREAI

Wu, Weijie; Yao, Zengquan; Xie, Shan; Luo, Xin; Huang, Hanyan; Deng, Xiaochuan; Chen, Hongbo; Zhang, Bangmin

Electron accumulation on oxygen atoms within the oxide layer on the surface of molybdenum carbide enhances electrochemical uranium extraction from seawater 碳化钼表面氧化物层中的氧原子电子积累增强了从海水中电化学提取铀的过程。

SEPARATION AND PURIFICATION TECHNOLOGY

IF9

2025-04-13

PREAI

Li, Guo; Li, Jiejie; Wang, Xue; Deng, Xiaochuan; Jin, Hongxiang; Luo, Hao; Xiao, Shunhong; Fang, Leiming; Zhu, Wenkun; He, Rong

Sulfonate-functionalized MIL-101 with high lithium adsorption capacity and selectivity 磺酸根功能化的MIL-101，具有高锂吸附容量和选择性

MATERIALS TODAY ENERGY

IF8.6

2025-04-01

PREAI

Zhu, Yongjie; Wang, Ruirui; Zhou, Yongquan; Ma, Wanxia; Fan, Jie; Deng, Xiaochuan; Zhu, Chaoliang; Yu, Aimin; Xu, Guowang; Li, Dong-Sheng; Sun, Chenghua

One step synthesis of flexible covalent organic Frameworks in water for efficient separation of CO2/CH4 一步法合成水中柔性共价有机框架高效分离CO2/CH4

SEPARATION AND PURIFICATION TECHNOLOGY

IF9

2025-03-01

PREAI

He, Xiaoxiang; Xu, Guowang; Fan, Jie; Qing, Binju; Ma, Wanxia; Zhu, Yongjie; Mu, Bing; Deng, Xiaochuan; Zhu, Chaoliang; Sun, Chenghua

An In-Depth Investigation Into Short-Circuit Failure Mechanisms of State-of-the-Art 1200 V Double Trench SiC MOSFETs

IEEE TRANSACTIONS ON POWER ELECTRONICS

IF6.5

2024-12-01

PREAI

Li, Xuan; Wu, Yifan; Qi, Zhao; Fu, Zhen; Chen, Yanning; Zhang, Wenmin; Zhang, Quan; Zhao, Hanqing; Deng, Xiaochuan; Zhang, Bo

Accurate Evaluation of Threshold Voltage Hysteresis in SiC MOSFET Under Switching Stress

IEEE TRANSACTIONS ON POWER ELECTRONICS

IF6.5

2024-11-01

PREAI

Li, Xu; Deng, Xiaochuan; Huang, Jingyu; Li, Xuan; Chen, Wanjun; Zhang, Bo

Investigation of Inrush Current Induced Trench Gate Degradation Inside SiC Mosfet by New Fowler-Nordheim Localization Methodology

IEEE TRANSACTIONS ON POWER ELECTRONICS

IF6.5

2024-05-01

PREAI

Zhao, Hanqing; Li, Xuan; Wu, Yifan; Yang, Rui; Lou, Qian; Li, Lingfeng; Deng, Xiaochuan; Zhang, Bo

A Novel 6500 V SiC Trench MOSFET with Integrated Unipolar Diode for Improved Third Quadrant and Switching Characteristics

MICROMACHINES

IF3

2023-12-31

OAAI

Wu, Hao; Li, Xuan; Deng, Xiaochuan; Wu, Yangyang; Ding, Jiawei; Peng, Wensong; Zhang, Bo

Investigation of Failure Mechanisms of 1200 V Rated Trench SiC MOSFETs Under Repetitive Avalanche Stress

IEEE TRANSACTIONS ON POWER ELECTRONICS

IF6.5

2022-09-01

PREAI

Deng, Xiaochuan; Huang, Wei; Li, Xu; Li, Xuan; Chen, Chao; Wen, Yi; Ding, Jiawei; Chen, Wanjun; Sun, Yongkui; Zhang, Bo

SiC Fin-Shaped Gate Trench MOSFET with Integrated Schottky Diode 集成肖特基二极管的SiC鳍栅沟槽MOSFET

MATERIALS

IF3.2

2021-11-22

OAAI

Deng, Xiaochuan; Liu, Rui; Li, Songjun; Li, Ling; Wu, Hao; Li, Xuan

Injection enhanced SiC planar gate IGBT with partial Schottky contact emitter

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2021-11-01

PREAI

Zhang, Jinping; Tu, Yuanyuan; Luo, Junyi; Peng, Zhenfeng; Deng, Xiaochuan; Zhang, Bo

Deep Understanding of Negative Gate Voltage Restriction for SiC mosfet Under Wide Temperature Range

IEEE TRANSACTIONS ON POWER ELECTRONICS

IF6.5

2021-08-01

PREAI

Chen, Ximing; Li, Xuan; Shi, Bangbing; Xiang, Junmiao; Dai, Yuanzhuo; Li, Chenzhan; Deng, Xiaochuan; Luo, Haihui; Wu, Yudong; Zhang, Bo

Short-Circuit Capability Prediction and Failure Mode of Asymmetric and Double Trench SiC MOSFETs 非对称双沟槽SiC mosfet短路能力预测及失效模式研究

IEEE TRANSACTIONS ON POWER ELECTRONICS

IF6.5

2021-07-01

PREAI

Deng, Xiaochuan; Li, Xu; Li, Xuan; Zhu, Hao; Xu, Xiaojie; Wen, Yi; Sun, Yongkui; Chen, Wanjun; Li, Zhiqiang; Zhang, Bo

Characterization and Fabrication of the CFM-JTE for 4H-SiC Power Device with High-Efficiency Protection and Increased JTE Dose Tolerance Window

NANOSCALE RESEARCH LETTERS

IF4.1

2020-11-10

OAAI

Wen, Yi; Xu, Xiao-jie; Tao, Meng-ling; Lu, Xiao-fei; Deng, Xiao-chuan; Li, Xuan; Li, Jun-tao; Li, Zhi-qiang; Zhang, Bo

Investigation and Failure Mode of Asymmetric and Double Trench SiC mosfets Under Avalanche Conditions

IEEE TRANSACTIONS ON POWER ELECTRONICS

IF6.5

2020-08-01

PREAI

Deng, Xiaochuan; Zhu, Hao; Li, Xuan; Tong, Xing; Gao, Shufeng; Wen, Yi; Bai, Song; Chen, Wanjun; Zhou, Kun; Zhang, Bo

Experimental study and characterization of an ultrahigh-voltage Ni/4H-SiC junction barrier Schottky rectifier with near ideal performances

SUPERLATTICES AND MICROSTRUCTURES

IF3.3

2020-02-01

PREAI

Deng, Xiaochuan; Yang, Liping; Wen, Yi; Li, Xuan; Yang, Fei; Wu, Hao; Cao, Houhua; Li, Juntao; Chen, Wanjun; Zhang, Bo

研究方向