未登录

A

Atsushi Oshiyama

Nagoya University

H指数:51

被引数:1.3万

个人简介

暂无内容

教育背景

暂无内容

工作经历

暂无内容

荣誉奖项

暂无内容

Atomic and electronic structures of point defects related to vacancy-mediated mechanism of Mg diffusion in GaN

与Mg在GaN中空位介导扩散机制相关的点缺陷的原子和电子结构

Japanese Journal of Applied Physics

IF1.8

2025-12-011

PRE

Misfit accommodation in a single interface atomic layer at a highly lattice-mismatched InN/GaN

在高度晶格失配的InN/GaN中单界面原子层的失配 accommodating

JOURNAL OF APPLIED PHYSICS

IF2.5

2025-02-040

OA

Passivation mechanisms of oxygen-vacancy-induced hole traps by Mg acceptor atoms at GaN/SiO2 interface

APPLIED PHYSICS LETTERS

IF3.6

2024-10-142

PRE

Insight into the step flow growth of gallium nitride based on density functional theory

APPLIED SURFACE SCIENCE

IF6.9

2023-03-013

PRE

Atomic and electronic structures of nitrogen vacancies in silicon nitride: Emergence of floating gap states

PHYSICAL REVIEW B

IF3.7

2022-10-255

PRE

An atomistic insight into reactions and free-energy profiles of NH3 and Ga on GaN surfaces during the epitaxial growth

APPLIED SURFACE SCIENCE

IF6.9

2022-10-012

OAAI

Atomistic insight into the initial stage of graphene formation on SiC(0001) surfaces

PHYSICAL REVIEW MATERIALS

IF3.4

2022-09-301

OA

Microscopic identification of stepped SiC(0001) and the reaction site of hydrogen-rich epitaxial growth

PHYSICAL REVIEW B

IF3.7

2022-07-262

PRE

Exploration of a large-scale reconstructed structure on GaN(0001) surface by Bayesian optimization

APPLIED PHYSICS LETTERS

IF3.6

2022-01-1012

OA

Microscopic mechanism of adatom diffusion on stepped SiC surfaces revealed by first-principles calculations

APPLIED SURFACE SCIENCE

IF6.9

2021-09-019

PREAI

Order-N orbital-free density-functional calculations with machine learning of functional derivatives for semiconductors and metals

PHYSICAL REVIEW RESEARCH

IF4.2

2021-08-2719

OA

Gallium-gallium weak bond that incorporates nitrogen at atomic steps during GaN epitaxial growth

APPLIED SURFACE SCIENCE

IF6.9

2021-08-016

PREAI

Defect-free interface between amorphous (Al2O3)1-x(SiO2)x and GaN(0001) revealed by first-principles simulated annealing technique

APPLIED PHYSICS LETTERS

IF3.6

2021-07-068

PREAI

Absence of Oxygen-Vacancy-Related Deep Levels in the Amorphous Mixed Oxide (Al2O3)1-x(SiO2)x: First-Principles Exploration of Gate Oxides in GaN-Based Power Devices

PHYSICAL REVIEW APPLIED

IF4.4

2020-07-139

PREAI

Screw dislocation that converts p-type GaN to n-type: Microscopic study on Mg condensation and leakage current in p-n diodes

APPLIED PHYSICS LETTERS

IF3.6

2020-07-0925

OAAI

Density functional calculations for structures and energetics of atomic steps and their implication for surface morphology on Si-face SiC polar surfaces

PHYSICAL REVIEW B

IF3.7

2020-05-1911

PREAI

Reaction Pathway of Surface-Catalyzed Ammonia Decomposition and Nitrogen Incorporation in Epitaxial Growth of Gallium Nitride

JOURNAL OF PHYSICAL CHEMISTRY C

IF3.2

2018-10-0916

PREAI

Unfolding energy spectra of double-periodicity two-dimensional systems: Twisted bilayer graphene and MoS2 on graphene

PHYSICAL REVIEW MATERIALS

IF3.4

2018-01-2518

OAAI

Mining single-electron spectra of the interface states from a supercell band structure of silicene on an Ag(111) substrate with band-unfolding methodology

PHYSICAL REVIEW B

IF3.7

2017-12-299

PREAI

First-principles study of lateral atom manipulation assisted by structural relaxation of a scanning tip apex

PHYSICAL REVIEW B

IF3.7

2017-10-063

PREAI