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Kenji Shiraishi

Tohoku University

H指数:47

被引数:1.1万

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First-principles study of excess Si transport in Si oxide on Si substrate using two-layer-oxide model for thermally oxidized interface

基于两层氧化物模型对热氧化界面处过剩Si在Si氧化物中的传输的第一性原理研究

Japanese Journal of Applied Physics

IF1.8

2026-02-162

PRE

Atomic and electronic structures of point defects related to vacancy-mediated mechanism of Mg diffusion in GaN

与Mg在GaN中空位介导扩散机制相关的点缺陷的原子和电子结构

Japanese Journal of Applied Physics

IF1.8

2025-12-011

PRE

Misfit accommodation in a single interface atomic layer at a highly lattice-mismatched InN/GaN

在高度晶格失配的InN/GaN中单界面原子层的失配 accommodating

JOURNAL OF APPLIED PHYSICS

IF2.5

2025-02-040

OA

Passivation mechanisms of oxygen-vacancy-induced hole traps by Mg acceptor atoms at GaN/SiO2 interface

APPLIED PHYSICS LETTERS

IF3.6

2024-10-142

PRE

First-principles study of recombination-enhanced migration of an interstitial magnesium in gallium nitride

PHYSICAL REVIEW B

IF3.7

2024-08-160

OA

First-principles study on silicon emission from interface into oxide during silicon thermal oxidation

硅热氧化过程中从界面到氧化物的硅发射的第一性原理研究

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2023-08-012

PRE

Effect of hydrogen atoms on potassium-ion electrets used in vibration-powered generators

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2023-04-010

PRE

Insight into the step flow growth of gallium nitride based on density functional theory

APPLIED SURFACE SCIENCE

IF6.9

2023-03-013

PRE

Improvement of the reliability of potassium-ion electrets thorough an additional oxidation process

APPLIED PHYSICS LETTERS

IF3.6

2022-12-131

PRE

Atomic and electronic structures of nitrogen vacancies in silicon nitride: Emergence of floating gap states

PHYSICAL REVIEW B

IF3.7

2022-10-255

PRE

Beyond ab initio reaction simulator: An application to GaN metalorganic vapor phase epitaxy

APPLIED PHYSICS LETTERS

IF3.6

2022-10-182

OA

An atomistic insight into reactions and free-energy profiles of NH3 and Ga on GaN surfaces during the epitaxial growth

APPLIED SURFACE SCIENCE

IF6.9

2022-10-012

OAAI

Microscopic identification of stepped SiC(0001) and the reaction site of hydrogen-rich epitaxial growth

PHYSICAL REVIEW B

IF3.7

2022-07-262

PRE

Pan-cancer methylome analysis for cancer diagnosis and classification of cancer cell of origin

用于癌症诊断和起源癌细胞分类的泛癌症甲基化分析

CANCER GENE THERAPY

IF5

2021-11-0810

PREAI

Ab initio-based approach for the oxidation mechanisms at SiO2/4H-SiC interface: Interplay of dry and wet oxidants during interfacial reaction

PHYSICAL REVIEW MATERIALS

IF3.4

2021-11-036

PRE

Gallium-gallium weak bond that incorporates nitrogen at atomic steps during GaN epitaxial growth

APPLIED SURFACE SCIENCE

IF6.9

2021-08-016

PREAI

Defect-free interface between amorphous (Al2O3)1-x(SiO2)x and GaN(0001) revealed by first-principles simulated annealing technique

APPLIED PHYSICS LETTERS

IF3.6

2021-07-068

PREAI

Progress in Modeling Compound Semiconductor Epitaxy: Unintentional Doping in GaN MOVPE

CRYSTAL GROWTH & DESIGN

IF3.4

2021-02-0110

PREAI

Negative-charge-storing mechanism of potassium-ion SiO2-based electrets for vibration-powered generators

APPLIED PHYSICS LETTERS

IF3.6

2020-11-106

OAAI

Absence of Oxygen-Vacancy-Related Deep Levels in the Amorphous Mixed Oxide (Al2O3)1-x(SiO2)x: First-Principles Exploration of Gate Oxides in GaN-Based Power Devices

PHYSICAL REVIEW APPLIED

IF4.4

2020-07-139

PREAI