Kenji Shiraishi - Publications, H-index & Citations

Kenji Shiraishi

Tohoku University

47H指数

748论文数

1.1W被引数

收录论文 96

发表时间

First-principles study of excess Si transport in Si oxide on Si substrate using two-layer-oxide model for thermally oxidized interface 基于两层氧化物模型对热氧化界面处过剩Si在Si氧化物中的传输的第一性原理研究

Japanese Journal of Applied Physics

IF1.8

2026-02-16

PREAI

Kageshima, Hiroyuki; Seo, Insung; Akiyama, Toru; Shiraishi, Kenji

Atomic and electronic structures of point defects related to vacancy-mediated mechanism of Mg diffusion in GaN 与Mg在GaN中空位介导扩散机制相关的点缺陷的原子和电子结构

Japanese Journal of Applied Physics

IF1.8

2025-12-01

PREAI

Seino, Kaori; Shiraishi, Kenji; Oshiyama, Atsushi

Misfit accommodation in a single interface atomic layer at a highly lattice-mismatched InN/GaN 在高度晶格失配的InN/GaN中单界面原子层的失配 accommodating

JOURNAL OF APPLIED PHYSICS

IF2.5

2025-02-04

OAAI

Nagase, Tomoki; Chokawa, Kenta; Kano, Emi; Fukuta, Keisuke; Sasaki, Takuo; Fujikawa, Seiji; Takahashi, Masamitsu; Shiraishi, Kenji; Oshiyama, Atsushi; Araki, Tsutomu; Ikarashi, Nobuyuki

Passivation mechanisms of oxygen-vacancy-induced hole traps by Mg acceptor atoms at GaN/SiO2 interface

APPLIED PHYSICS LETTERS

IF3.6

2024-10-14

PREAI

Hattori, Shuto; Oshiyama, Atsushi; Shiraishi, Kenji

First-principles study of recombination-enhanced migration of an interstitial magnesium in gallium nitride

PHYSICAL REVIEW B

IF3.7

2024-08-16

OAAI

Zhao, Yuansheng; Shiraishi, Kenji; Narita, Tetsuo; Oshiyama, Atsushi

First-principles study on silicon emission from interface into oxide during silicon thermal oxidation 硅热氧化过程中从界面到氧化物的硅发射的第一性原理研究

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2023-08-01

PREAI

Kageshima, Hiroyuki; Akiyama, Toru; Shiraishi, Kenji

Effect of hydrogen atoms on potassium-ion electrets used in vibration-powered generators

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2023-04-01

PREAI

Ohata, Yoshiki; Araidai, Masaaki; Ishiguro, Takuma; Mitsuya, Hiroyuki; Toshiyoshi, Hiroshi; Shibata, Yasushi; Hashiguchi, Gen; Shiraishi, Kenji

Insight into the step flow growth of gallium nitride based on density functional theory

APPLIED SURFACE SCIENCE

IF6.9

2023-03-01

PREAI

Bui, Kieu My; Shiraishi, Kenji; Oshiyama, Atsushi

Improvement of the reliability of potassium-ion electrets thorough an additional oxidation process

APPLIED PHYSICS LETTERS

IF3.6

2022-12-13

PREAI

Ohata, Yoshiki; Nakanishi, Toru; Chokawa, Kenta; Araidai, Masaaki; Ishiguro, Takuma; Mitsuya, Hiroyuki; Toshiyoshi, Hiroshi; Shibata, Yasushi; Hashiguchi, Gen; Shiraishi, Kenji

Atomic and electronic structures of nitrogen vacancies in silicon nitride: Emergence of floating gap states

PHYSICAL REVIEW B

IF3.7

2022-10-25

PREAI

Nanataki, Fugo; Shiraishi, Kenji; Iwata, Jun-ichi; Matsushita, Yu-ichiro; Oshiyama, Atsushi

Beyond ab initio reaction simulator: An application to GaN metalorganic vapor phase epitaxy

APPLIED PHYSICS LETTERS

IF3.6

2022-10-18

OAAI

Kusaba, A.; Nitta, S.; Shiraishi, K.; Kuboyama, T.; Kangawa, Y.

An atomistic insight into reactions and free-energy profiles of NH3 and Ga on GaN surfaces during the epitaxial growth

APPLIED SURFACE SCIENCE

IF6.9

2022-10-01

OAAI

Boero, Mauro; Bui, Kieu My; Shiraishi, Kenji; Ishisone, Kana; Kangawa, Yoshihiro; Oshiyama, Atsushi

Microscopic identification of stepped SiC(0001) and the reaction site of hydrogen-rich epitaxial growth

PHYSICAL REVIEW B

IF3.7

2022-07-26

PREAI

Kimura, Tomoya; Chokawa, Kenta; Shiraishi, Kenji; Oshiyama, Atsushi

Pan-cancer methylome analysis for cancer diagnosis and classification of cancer cell of origin 用于癌症诊断和起源癌细胞分类的泛癌症甲基化分析

CANCER GENE THERAPY

IF5

2021-11-08

PREAI

Shimizu, Dai; Taniue, Kenzui; Matsui, Yusuke; Haeno, Hiroshi; Araki, Hiromitsu; Miura, Fumihito; Fukunaga, Mitsuko; Shiraishi, Kenji; Miyamoto, Yuji; Tsukamoto, Seiichi; Komine, Aya; Kobayashi, Yuta; Kitagawa, Akihiro; Yoshikawa, Yukihiro; Sato, Kuniaki; Saito, Tomoko; Ito, Shuhei; Masuda, Takaaki; Niida, Atsushi; Suzuki, Makoto; Baba, Hideo; Ito, Takashi; Akimitsu, Nobuyoshi; Kodera, Yasuhiro; Mimori, Koshi

Ab initio-based approach for the oxidation mechanisms at SiO2/4H-SiC interface: Interplay of dry and wet oxidants during interfacial reaction

PHYSICAL REVIEW MATERIALS

IF3.4

2021-11-03

PREAI

Shimizu, Tsunashi; Akiyama, Toru; Ito, Tomonori; Kageshima, Hiroyuki; Uematsu, Masashi; Shiraishi, Kenji

Gallium-gallium weak bond that incorporates nitrogen at atomic steps during GaN epitaxial growth

APPLIED SURFACE SCIENCE

IF6.9

2021-08-01

PREAI

Bui, Kieu My; Shiraishi, Kenji; Oshiyama, Atsushi