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F

Fabrice Oehler

Université Paris Saclay

H指数:27

被引数:2,281

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Hybridization in van der Waals Epitaxy of PtSe2/h-BN and PtSe2/Graphene Heterostructures

范德华外延生长的PtSe2/h-BN和PtSe2/Graphene异质结构中的杂化现象

IF16

2025-11-010

PRE

Undoped and doped wurtzite GaAs probed by polarization- and time-resolved cathodoluminescence

未掺杂和掺杂纤锌矿GaAs通过偏振和时间分辨阴极发光探测

NANOSCALE ADVANCES

IF4.6

2025-01-010

OA

Distinguishing different stackings in WSe2 bilayers grown using chemical vapor deposition

PHYSICAL REVIEW B

IF3.7

2024-10-150

PRE

Direct Reconstruction of the Band Diagram of Rhombohedral-Stacked Bilayer WSe2-Graphene Heterostructure via Photoemission Electron Microscopy

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2024-09-042

PRE

Mapping of Vibrational Modes Revealing a Strong and Tunable Coupling in Two Juxtaposed 3R-WSe2 Nanodrums

振动模式的映射揭示了两个并列的3R-WSe2纳米鼓中的强且可调的耦合

IF9.1

2024-08-130

PRE

Anisotropic flat band and charge density wave in quasi-one-dimensional indium telluride

PHYSICAL REVIEW B

IF3.7

2024-07-250

PRE

High Strain Engineering of a Suspended WSSe Monolayer Membrane by Indentation and Measured by Tip-Enhanced Photoluminescence

通过压痕对悬浮的WSSe单层膜进行高应变工程，并通过尖端增强的光致发光进行测量

ADVANCED OPTICAL MATERIALS

IF7.2

2024-04-160

OA

Stacking order and electronic band structure in MBE-grown trilayer WSe 2 films

PHYSICAL REVIEW B

IF3.7

2024-03-292

OA

Quasi van der Waals Epitaxy of Rhombohedral-Stacked Bilayer WSe2 on GaP(111) Heterostructure

GaP(111) 异质结构上菱形堆叠双层WSe2的准范德华外延

IF16

2023-10-199

OA

Intrinsic defects and mid-gap states in quasi-one-dimensional indium telluride

PHYSICAL REVIEW RESEARCH

IF4.2

2023-09-054

OA

Quantum Confinement and Electronic Structure at the Surface of van der Waals Ferroelectric α -In2Se3

范德华铁电体 α-in2se3表面的量子限制和电子结构

IF16

2023-08-165

OA

Electronic properties of rhombohedrally stacked bilayer WSe2 obtained by chemical vapor deposition

PHYSICAL REVIEW B

IF3.7

2023-07-247

OA

Direct observation of highly anisotropic electronic and optical nature in indium telluride

PHYSICAL REVIEW MATERIALS

IF3.4

2023-07-116

PRE

Extreme mechanical tunability in suspended MoS2 resonator controlled by Joule heating

NPJ 2D MATERIALS AND APPLICATIONS

IF8.8

2023-03-2910

OA

α-As2Te3 as a platform for the exploration of the electronic band structure of single layer β-tellurene

PHYSICAL REVIEW B

IF3.7

2022-09-304

OA

GaAs/GaInP nanowire solar cell on Si with state-of-the-art Voc and quasi-Fermi level splitting

IF5.1

2022-01-014

OA

Evidence for highly p-type doping and type II band alignment in large scale monolayer WSe2/Se-terminated GaAs heterojunction grown by molecular beam epitaxy

IF5.1

2022-01-0115

OA

Strain and Spin-Orbit Coupling Engineering in Twisted WS2/Graphene Heterobilayer

扭曲WS2/石墨烯异质层中的应变和自旋轨道耦合工程

IF4.3

2021-10-3118

OAAI

Multi-order phononic frequency comb generation within a MoS2 electromechanical resonator

APPLIED PHYSICS LETTERS

IF3.6

2021-10-2512

OA

Electronic band gap of van der Waals α-As2Te3 crystals

APPLIED PHYSICS LETTERS

IF3.6

2021-07-295

OAAI