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T
Toshikazu Nishida
State University System of Florida
45
H指数
254
论文数
7.6K
被引数
0
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35
发表时间
发表时间
IF
被引数
Nanoscale Phase and Orientation Mapping in Multiphase Polycrystalline Hafnium Zirconium Oxide Thin Films Using 4D-STEM and Automated Diffraction Indexing
SMALL METHODS
IF
9.1
2024-05-16
0
PRE
AI
Baucom, Garrett; Hershkovitz, Eitan; Chojecki, Paul; Nishida, Toshikazu; Tabrizian, Roozbeh; Kim, Honggyu
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3D printing of hollow geometries using blocking liquid substitution stereolithography
SCIENTIFIC REPORTS
IF
3.9
2023-01-09
4
OA
AI
Bhanvadia, Aftab A.; Farley, Richard T.; Noh, Youngwook; Nishida, Toshikazu
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High-resolution stereolithography using a static liquid constrained interface
COMMUNICATIONS MATERIALS
IF
9.6
2021-04-09
29
OA
AI
Bhanvadia, Aftab A.; Farley, Richard T.; Noh, Youngwook; Nishida, Toshikazu
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Thermal retention of atomic layer deposited Hf0.5Zr0.502 films using H2O and O2-H2 plasma oxidation methods
APPLIED PHYSICS LETTERS
IF
3.6
2021-01-19
8
OA
AI
Walters, Glen; Chojecki, Paul; Forrester, Zane; Nishida, Toshikazu
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Microfluidic Paper-Based Analytical Device for Histidine Determination
用于组氨酸测定的微流控纸基分析装置
APPLIED BIOCHEMISTRY AND BIOTECHNOLOGY
IF
3.3
2020-06-27
9
PRE
AI
Kugimiya, Akimitsu; Fujikawa, Akane; Jiang, Xiao; Fan, Z. Hugh; Nishida, Toshikazu; Kohda, Jiro; Nakano, Yasuhisa; Takano, Yu
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A 30-nm thick integrated hafnium zirconium oxide nano-electro-mechanical membrane resonator
APPLIED PHYSICS LETTERS
IF
3.6
2020-01-27
20
OA
AI
Ghatge, M.; Walters, G.; Nishida, T.; Tabrizian, R.
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Effect of in situ hydrogen plasma on the ferroelectricity of hafnium zirconium oxide films
APPLIED PHYSICS LETTERS
IF
3.6
2020-01-22
17
OA
AI
Walters, Glen; Shekhawat, Aniruddh; Moghaddam, Saeed; Jones, Jacob L.; Nishida, Toshikazu
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Screen-printable and stretchable hard magnetic ink formulated from barium hexaferrite nanoparticles
JOURNAL OF MATERIALS CHEMISTRY C
IF
5.1
2020-01-01
2
PRE
AI
Smith, Connor S.; Sondhi, Kartik; Mills, Sara C.; Andrew, Jennifer S.; Fan, Z. Hugh; Nishida, Toshikazu; Arnold, David P.
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An ultrathin integrated nanoelectromechanical transducer based on hafnium zirconium oxide
NATURE ELECTRONICS
IF
40.9
2019-10-07
53
OA
AI
Ghatge, Mayur; Walters, Glen; Nishida, Toshikazu; Tabrizian, Roozbeh
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Tiered deposition of sub-5 nm ferroelectric Hf1-xZrxO2 films on metal and semiconductor substrates
APPLIED PHYSICS LETTERS
IF
3.6
2018-05-07
37
PRE
AI
Walters, Glen; Shekhawat, Aniruddh; Rudawski, Nicholas G.; Moghaddam, Saeed; Nishida, Toshikazu
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Doped Hf0.5Zr0.5O2 for high efficiency integrated supercapacitors
APPLIED PHYSICS LETTERS
IF
3.6
2017-06-09
103
PRE
AI
Lomenzo, Patrick D.; Chung, Ching-Chang; Zhou, Chuanzhen; Jones, Jacob L.; Nishida, Toshikazu
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Mixed Al and Si doping in ferroelectric HfO2 thin films
APPLIED PHYSICS LETTERS
IF
3.6
2015-12-15
48
OA
AI
Lomenzo, Patrick D.; Takmeel, Qanit; Zhou, Chuanzhen; Chung, Ching-Chang; Moghaddam, Saeed; Jones, Jacob L.; Nishida, Toshikazu
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Structure of 3 at.% and 9 at.% Si-doped HfO2 from combined refinement of X-ray and neutron diffraction patterns
通过x射线和中子衍射图的组合细化得到3 at。% 和9 at。% Si掺杂的HfO2的结构
JOURNAL OF ALLOYS AND COMPOUNDS
IF
6.3
2015-10-01
9
OA
AI
Zhao, Lili; Hou, Dong; Usher, Tedi-Marie; Iamsasri, Thanakorn; Fancher, Chris M.; Forrester, Jennifer S.; Nishida, Toshikazu; Moghaddam, Saeed; Jones, Jacob L.
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Low-power electrically controlled thermoelastic microvalves integrated in thermoplastic microfluidic devices
MICROFLUIDICS AND NANOFLUIDICS
IF
2.5
2015-09-29
11
PRE
AI
Augustine, Shancy; Gu, Pan; Zheng, Xiangjun; Nishida, Toshikazu; Fan, Z. Hugh
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The effects of layering in ferroelectric Si-doped HfO2 thin films
APPLIED PHYSICS LETTERS
IF
3.6
2014-08-21
64
PRE
AI
Lomenzo, Patrick D.; Takmeel, Qanit; Zhou, Chuanzhen; Liu, Yang; Fancher, Chris M.; Jones, Jacob L.; Moghaddam, Saeed; Nishida, Toshikazu
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Mechanical stress effects on Pb(Zr,Ti)O3 thin-film ferroelectric capacitors embedded in a standard complementary metal-oxide-semiconductor process
APPLIED PHYSICS LETTERS
IF
3.6
2014-06-04
4
PRE
AI
Acosta, Antonio G.; Rodriguez, John A.; Nishida, Toshikazu
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The use of polyurethane as an elastomer in thermoplastic microfluidic devices and the study of its creep properties
ELECTROPHORESIS
IF
2.5
2013-09-14
24
OA
AI
Gu, Pan; Nishida, Toshikazu; Fan, Z. Hugh
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Comprehensive characterization and failure modes of tungsten microwire arrays in chronic neural implants
JOURNAL OF NEURAL ENGINEERING
IF
3.8
2012-09-25
286
PRE
AI
Prasad, Abhishek; Xue, Qing-Shan; Sankar, Viswanath; Nishida, Toshikazu; Shaw, Gerry; Streit, Wolfgang J.; Sanchez, Justin C.
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Physical insights on comparable electron transport in (100) and (110) double-gate fin field-effect transistors
APPLIED PHYSICS LETTERS
IF
3.6
2012-03-20
6
PRE
AI
Baykan, Mehmet O.; Young, Chadwin D.; Akarvardar, Kerem; Majhi, Prashant; Hobbs, Chris; Kirsch, Paul; Jammy, Raj; Thompson, Scott E.; Nishida, Toshikazu
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System Modeling of Piezoelectric Energy Harvesters
IEEE TRANSACTIONS ON POWER ELECTRONICS
IF
6.5
2012-02-01
18
PRE
AI
Phipps, Alex; Nishida, Toshikazu
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研究方向
暂时未获取到该数据
合作学者
合作期刊
刘洋
(Yang Liu)
H 指数: 128 · 论文数: 2.2K
S
S. J. Pearton
H 指数: 115 · 论文数: 2.9K
F
F. Ren
H 指数: 94 · 论文数: 2.0K
J
José C. Prı́ncipe
H 指数: 82 · 论文数: 1.2K
I
Isao Karube
H 指数: 73 · 论文数: 956
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