未登录Enhancement-mode GaN/AlGaN p-channel field effect transistors with ID > 110 mA/mm achieved through source/drain tunnel junction contacts通过源极/漏极隧道结触点实现ID> 110 mA/mm的增强型GaN/AlGaN p沟道场效应晶体管
Wang, Zhaofeng; Liu, Zhihong; Chen, Xiaojin; Chen, Xing; Du, Hanghai; Xing, Weichuan; Zhang, Weihang; Zhao, Shenglei; Li, Xiangdong; Zhang, Jincheng; Hao, Yue
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收藏P-GaN-gate GaN power high-electron mobility transistors with Mg-acceptor Re-passivation realized by ammonia plasma treatment
Wang, Zhaofeng; Li, Jin; Liu, Zhihong; Chen, Xiaojin; Xu, Mei; Xu, Shuning; Wei, Hu; Chen, Xing; Xing, Weichuan; Zhang, Weihang; Zhao, Shenglei; Li, Xiangdong; Zhang, Jincheng; Hao, Yue
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收藏Mechanism of current-collapse free for lateral GaN Schottky barrier diodes utilizing polarization-induced hole injection
Zhang, Tao; Li, Ruohan; Zhang, Yanni; Su, Huake; Zhang, Weihang; Duan, Xiaoling; Zhang, Jincheng; Xu, Shengrui; Lv, Yueguang; Hao, Yue
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收藏All-optical reversible single-photon isolation at room temperature
Dong, Ming-Xin; Xia, Ke-Yu; Zhang, Wei-Hang; Yu, Yi-Chen; Ye, Ying-Hao; Li, En-Ze; Zeng, Lei; Ding, Dong-Sheng; Shi, Bao-Sen; Guo, Guang-Can; Nori, Franco
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