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Comparison of thermal and atomic-layer-deposited oxides on 4H-SiC after post-oxidation-annealing in nitric oxideAPPLIED PHYSICS LETTERSIF3.62012-02-2430PREAI
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Observation of stacking faults formed during homoepitaxial growth of p-type 4H-SiCAPPLIED PHYSICS LETTERSIF3.62009-03-196PREAI
Homoepitaxial growth of vanadium-doped semi-insulating 4H-SiC using bis-trimethylsilylmethane and bis-cyclopentadienylvanadium precursorsJOURNAL OF THE ELECTROCHEMICAL SOCIETYIF3.32008-01-017PREAI
Analysis of current conduction mechanisms in atomic-layer-deposited Al2O3 gate on 4H silicon carbideAPPLIED PHYSICS LETTERSIF3.62007-04-2037PREAI
Homoepitaxial growth and electrical characterization of iron-doped semi-insulating 4H-SiC epilayerAPPLIED PHYSICS LETTERSIF3.62006-10-1120PREAI
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