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Xuan Li

Chinese Academy of Sciences

H指数:9

被引数:236

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High-Temperature Charge Exchange Characteristic in Homoepitaxial 3C-SiC MOS Capacitor

高温下同质外延3C-SiC MOS电容器的电荷交换特性

IEEE Transactions on Electron Devices

IF3.2

2026-10-290

PRE

Edge-deployable greenhouse tomato cluster harvesting robot integrating YOLOv8n-BiFPN-WIoU and ROS-based autonomous control

基于YOLOv8n-BiFPN-WIoU和ROS自主控制的边缘部署温室番茄簇采摘机器人

Frontiers in Plant Science

IF4.8

2026-10-010

OAAI

Analysis of surge current-induced failure in IGCTs and structural optimization

IGCTs中浪涌电流引起的失效分析及结构优化

Journal of Physics D: Applied Physics

IF3.2

2026-04-300

PRE

Investigation of turn-off dv/dt controllability in ultrahigh-voltage SiC P-IGBTs

超高压SiC P-IGBT关断dv/dt可控性的研究

Journal of Physics D: Applied Physics

IF3.2

2026-04-080

PRE

Anisotropic mobility behavior and reduction of interface trap density of 4H-SiC CMOS up to 400 °C

4H-SiC CMOS在400 °C下的各向异性迁移率行为及界面陷阱密度降低

Journal of Physics D: Applied Physics

IF3.2

2026-02-100

OAAI

Defect and electrical characteristics of 4H-SiC junction barrier Schottky diodes under high-energy electron irradiation at different fluences

4H-SiC结势垒肖特基二极管在不同注量高能电子辐照下的缺陷和电学特性

Journal of Physics D: Applied Physics

IF0

2025-08-290

PRE

Eco-friendly Flexible and Stretchable Printed Electronics based on Sustainable Elastic Substrate and Ink

基于可持续弹性基材和油墨的环保型柔性及可拉伸印刷电子技术

J. Mater. Chem. A

IF9.5

2025-08-280

PRE

Advanced thermal boundary resistance measurement techniques for thick-film diamond heterostructures

APPLIED PHYSICS LETTERS

IF3.6

2025-01-090

PRE

Effects of Miscut on Step Instabilities in Homo-Epitaxially Grown GaN

IF4.3

2024-04-252

OAAI

A Trap Characterization System for GaN HEMTs Based on Transient Drain Voltage

IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT

IF5.9

2024-01-010

PRE

Transfer-free rapid growth of 2-inch wafer-scale patterned graphene as transparent conductive electrodes and heat spreaders for GaN LEDs

NPJ 2D MATERIALS AND APPLICATIONS

IF8.8

2023-10-190

OA

Nitrogen vacancies in GaN templates and their critical role on the luminescence efficiency of blue quantum wells

IF3.3

2023-04-203

OA

A thermal boundary resistance measurement method based on a designed chip with the heat source separated from the temperature sensor

APPLIED PHYSICS LETTERS

IF3.6

2023-02-154

PRE

Characterization of hole traps in reverse-biased Schottky-type p-GaN gate HEMTs by current-transient method

APPLIED PHYSICS LETTERS

IF3.6

2022-10-1110

PRE

Greatly suppressed potential inhomogeneity and performance improvement of c-plane InGaN green laser diodes

SCIENCE CHINA-MATERIALS

IF7.4

2021-11-125

OA

Transfer-Free Graphene-Like Thin Films on GaN LED Epiwafers Grown by PECVD Using an Ultrathin Pt Catalyst for Transparent Electrode Applications

IF3.2

2019-10-286

OAAI