D. Gogova - Publications, H-index & Citations

D. Gogova

Linkoping University

45H指数

152论文数

5.0K被引数

收录论文 45

发表时间

Epitaxial MgSnN₂ on 4H-SiC (0001): An Earth-Abundant Nitride for Green Optoelectronics and Photovoltaics 外延生长的MgSnN₂在4H-SiC (0001)上：一种用于绿色光电子学和光伏技术的地球丰量氮化物

Advanced Optical Materials

IF7.2

2026-09-12

OAAI

D. Gogova; D. Tran; V. Stanishev; D. Shafizadeh; C.-L. Hsiao; M. Kim; B. Pécz; A. Kovács; K. Frey; A. Sulyok; N. K. Singh; A. Le Febvrier; P. Eklund; V. Darakchieva

Chemical reaction mechanism between trimethylgallium and oxygen for β-gallium oxide growth: Thermodynamic and experimental studies 三甲基镓与氧气反应生成β-氧化镓的化学机理：热力学与实验研究

JOURNAL OF APPLIED PHYSICS

IF2.5

2025-09-07

OAAI

Goto, Ken; Dhora, Andri; Schubert, Mathias; Gogova, Daniela; Darakchieva, Vanya

Investigation on the structural and electronic property of monoclinic Al2O3/β-Ga2O3 superlattice with varying layer periods

APPLIED PHYSICS LETTERS

IF3.6

2025-03-01

PREAI

Cao, Jiahe; Wang, Yan; Zhang, Chuang; Hu, Guofeng; Tang, Weihua; Zeng, Guosong; Gogova, Daniela; Tan, Chee-Keong

Long-lived excitons in thermally annealed hydrothermal ZnO

HELIYON

IF3.6

2024-02-01

OAAI

Scajev, Patrik; Gogova, Daniela

Low Al-content n-type AlxGa1-xN layers with a high-electron-mobility grown by hot-wall metalorganic chemical vapor deposition

VACUUM

IF3.9

2023-11-01

OAAI

Stanishev, Vallery; Armakavicius, Nerijus; Gogova, Daniela; Nawaz, Muhammad; Rorsman, Niklas; Paskov, Plamen P.; Darakchieva, Vanya

Theoretical prediction of two-dimensional BC2X (X = N, P, As) monolayers: ab initio investigations

SCIENTIFIC REPORTS

IF3.9

2022-12-23

OAAI

Bafekry, A.; Naseri, M.; Faraji, M.; Fadlallah, M. M.; Hoat, D. M.; Jappor, H. R.; Ghergherehchi, M.; Gogova, D.; Afarideh, H.

Comparative study of radiation tolerance of GaN and Ga2O3 polymorphs

VACUUM

IF3.9

2022-06-01

OAAI

Titov, A. I.; Karabeshkin, K. V.; Struchkov, A. I.; Nikolaev, V. I.; Azarov, A.; Gogova, D. S.; Karaseov, P. A.

Tunable electronic properties of porous graphitic carbon nitride (C6N7) monolayer by atomic doping and embedding: A first-principle study 通过原子掺杂和嵌入可调谐多孔石墨氮化碳 (C6N7) 单层的电子性质: 第一性原理研究

APPLIED SURFACE SCIENCE

IF6.9

2022-05-01

PREAI

Bafekry, A.; Faraji, M.; Hieu, N. N.; Khatibani, A. Bagheri; Fadlallah, Mohamed M.; Gogova, D.; Ghergherehchi, M.

Ab-initio-driven prediction of puckered penta-like PdPSeX (X=O, S, Te) Janus monolayers: Study on the electronic, optical, mechanical and photocatalytic properties

APPLIED SURFACE SCIENCE

IF6.9

2022-04-01

OAAI

Bafekry, A.; Faraji, M.; Fadlallah, Mohamed M.; Jappor, H. R.; Hieu, N. N.; Ghergherehchi, M.; Gogova, D.

A new plasma-based approach to hydrogen intercalation of graphene

SUPERLATTICES AND MICROSTRUCTURES

IF3.3

2021-12-01

PREAI

Vodopyanov, Alexander; Preobrazhensky, Evgeny; Nezhdanov, Aleksey; Zorina, Mariya; Mashin, Aleksandr; Yakimova, Rositsa; Gogova, Daniela

Adsorption of habitat and industry-relevant molecules on the MoSi2N4 monolayer 栖息地和工业相关分子在MoSi2N4单层上的吸附

APPLIED SURFACE SCIENCE

IF6.9

2021-10-01

PREAI

Bafekry, A.; Faraji, M.; Fadlallah, M. M.; Ziabari, A. Abdolahzadeh; Khatibani, A. Bagheri; Feghhi, S. A. H.; Ghergherehchi, M.; Gogova, D.

Tunable electronic and magnetic properties of MoSi2N4 monolayer via vacancy defects, atomic adsorption and atomic doping 通过空位缺陷，原子吸附和原子掺杂调节MoSi2N4单层的电子和磁性

APPLIED SURFACE SCIENCE

IF6.9

2021-09-01

102

OAAI

Bafekry, A.; Faraji, M.; Fadlallah, Mohamed M.; Khatibani, A. Bagheri; Ziabari, A. abdolahzadeh; Ghergherehchi, M.; Nedaei, Sh; Shayesteh, S. Farjami; Gogova, D.

Metal-doped KNbO3 for visible light photocatalytic water splitting: A first principles investigation

APPLIED PHYSICS LETTERS

IF3.6

2021-08-10

PREAI

Maarouf, Ahmed A.; Gogova, D.; Fadlallah, Mohamed M.

Prediction of two-dimensional bismuth-based chalcogenides Bi2X3(X = S, Se, Te) monolayers with orthorhombic structure: a first-principles study

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2021-07-19

OAAI

Bafekry, A.; Faraji, M.; Fadlallah, M. M.; Jappor, H. R.; Hieu, N. N.; Ghergherehchi, M.; Feghhi, S. A. H.; Gogova, D.

Point Defects in a Two-Dimensional ZnSnN2 Nanosheet: A First-Principles Study on the Electronic and Magnetic Properties

JOURNAL OF PHYSICAL CHEMISTRY C

IF3.2

2021-06-03

PREAI

Bafekry, Asadollah; Faraji, Mehrdad; Fadlallah, Mohamed M.; Mortazavi, Bohayra; Ziabari, A. Abdolahzadeh; Khatibani, A. Bagheri; Nguyen, Chuong, V; Ghergherehchi, Mitra; Gogova, Daniela

ZnSnN2 in Real Space and k-Space: Lattice Constants, Dislocation Density, and Optical Band Gap

ADVANCED OPTICAL MATERIALS

IF7.2

2021-05-18

PREAI

Olsen, Vegard Skiftestad; oversjoen, Vetle; Gogova, Daniela; Pecz, Bela; Galeckas, Augustinas; Borgersen, Jon; Karlsen, Kjetil; Vines, Lasse; Kuznetsov, Andrej

Semiconducting Chalcogenide Alloys Based on the (Ge, Sn, Pb) (S, Se, Te) Formula with Outstanding Properties: A First-Principles Calculation Study

ACS OMEGA

IF4.3

2021-03-30

OAAI

Bafekry, Asadollah; Shahrokhi, Masoud; Shafique, Aamir; Jappor, Hamad R.; Fadlallah, Mohamed M.; Stampfl, Catherine; Ghergherehchi, Mitra; Mushtaq, Muhammad; Feghhi, Seyed Amir Hossein; Gogova, Daniela

MoSi2N4 single-layer: a novel two-dimensional material with outstanding mechanical, thermal, electronic and optical properties MoSi2N4单层: 一种新颖的二维材料，具有出色的机械，热，电子和光学性能

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2021-02-01

204

OAAI

Bafekry, A.; Faraji, M.; Hoat, D. M.; Shahrokhi, M.; Fadlallah, M. M.; Shojaei, F.; Feghhi, S. A. H.; Ghergherehchi, M.; Gogova, D.

Vertical two-dimensional layered conjugated porous organic network structures of poly-benzimidazobenzophenanthroline (BBL): A first-principles study

APPLIED PHYSICS LETTERS

IF3.6

2020-12-08

PREAI

Bafekry, A.; Fadlallah, M. M.; Nguyen, C.; Gogova, D.

Synthesis of gallium oxide via interaction of gallium with iodide pentoxide in plasma

OPTICAL AND QUANTUM ELECTRONICS

IF4

2020-11-12

PREAI

Mochalov, Leonid; Logunov, Alexander; Gogova, Daniela; Zelentsov, Sergey; Prokhorov, Igor; Starostin, Nikolay; Letnianchik, Aleksey; Vorotyntsev, Vladimir

研究方向