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Hiroshi Tochihara

fukuoka university

H指数:33

被引数:3,598

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Microscopic Hopping Mechanism of an Isolated PTCDA Molecule on a Reactive Ge(001) Surface

JOURNAL OF PHYSICAL CHEMISTRY C

IF3.2

2020-10-293

PREAI

Initial Growth of Pentacene Thin Film on Si(001) Substrate

JOURNAL OF PHYSICAL CHEMISTRY C

IF3.2

2019-01-296

PREAI

Neutralization of an epitaxial graphene grown on a SiC(0001) by means of palladium intercalation

APPLIED PHYSICS LETTERS

IF3.6

2017-03-2721

PREAI

Theoretical Study of Cu Intercalation through a Defect in Zero-Layer Graphene on SiC Surface

JOURNAL OF PHYSICAL CHEMISTRY C

IF3.2

2017-03-2415

PREAI

Adsorption of PTCDA on Ge(001)

JOURNAL OF PHYSICAL CHEMISTRY C

IF3.2

2017-02-079

PREAI

Microscopic mechanism of the homoepitaxy on Si(111)7 x 7

PHYSICAL REVIEW B

IF3.7

2016-07-059

PREAI

Adsorption of PTCDA on Si(001)-2 x 1 surface

JOURNAL OF CHEMICAL PHYSICS

IF3.1

2015-01-218

PREAI

Fabrication of a single layer graphene by copper intercalation on a SiC(0001) surface

APPLIED PHYSICS LETTERS

IF3.6

2014-02-0643

PREAI

Scanning tunneling microscopic and spectroscopic studies on a crystalline silica monolayer epitaxially formed on hexagonal SiC(000(1)over-bar) surfaces

APPLIED PHYSICS LETTERS

IF3.6

2014-02-037

PREAI

The epitaxial crystalline silicon-oxynitride layer on SiC(0001): Formation of an ideal SiC-insulator interface

PROGRESS IN SURFACE SCIENCE

IF7.2

2011-12-0126

PREAI

Ground state of the Sn/Ge(111)-3x3 surface and its electron-beam-induced disordering

PHYSICAL REVIEW B

IF3.7

2010-02-254

PREAI

Si islands with 1 x 1 termination formed by desorption of Tl from Si(111) surface

Tl从Si(111) 表面解吸形成的具有1x1终端的Si岛

APPLIED SURFACE SCIENCE

IF6.9

2009-11-011

PREAI

Atomic-layer-resolved bandgap structure of an ultrathin oxynitride-silicon film epitaxially grown on 6H-SiC(0001)

PHYSICAL REVIEW B

IF3.7

2009-06-0123

PREAI

Reactive epitaxial growth of MnSi ultrathin films on Si(111) by Mn deposition

PHYSICAL REVIEW B

IF3.7

2009-05-1325

PREAI

Magic clusters and (2 x 1) local structure formed in a half-unit cell of the Si(111)-(7 x 7) surface by Tl adsorption

APPLIED SURFACE SCIENCE

IF6.9

2008-09-013

PREAI

Epitaxially grown flat MnSi ultrathin film on Si(111)

APPLIED PHYSICS LETTERS

IF3.6

2008-07-0811

PREAI

Core-level photoemission study of thallium adsorbed on a Si(111)-(7x7) surface: Valence state of thallium and the charge state of surface Si atoms

PHYSICAL REVIEW B

IF3.7

2006-08-3128

PREAI

Reversible phase transitions in the pseudomorphic √7x√3>-hex In layer on Si(111)

PHYSICAL REVIEW B

IF3.7

2006-07-2827

PREAI

Structure of the Si(001)-(2x2)-Tl phase at 0.5 monolayer coverage

PHYSICAL REVIEW B

IF3.7

2005-06-156

PREAI

Ground state of the Si(001) surface revisited - is seeing believing?

Si(001) 表面的基态重新审视-眼见为实吗？

PROGRESS IN SURFACE SCIENCE

IF7.2

2004-10-0151

OAAI