未登录

K

Kazutoshi Takahashi

Saga University

H指数:24

被引数:2,264

个人简介

暂无内容

教育背景

暂无内容

工作经历

暂无内容

荣誉奖项

暂无内容

Band alignment of ZnS/ZnTe interface suitable for intermediate band solar cells

ZnS/ZnTe界面带阶对中间带太阳能电池的适用性

Solar Energy Materials and Solar Cells

IF6.3

2026-08-180

OAAI

Dirac point shift depending on amount of intercalated rhodium atoms under an epitaxial graphene grown on a SiC(0001)

在SiC(0001)上外延生长的石墨烯中，插入的铑原子数量对狄拉克点的偏移影响

IF11.6

2026-07-010

PRE

Unsupervised learning of spatially-resolved ARPES spectra for epitaxially grown graphene via non-negative matrix factorization

SCIENTIFIC REPORTS

IF3.9

2024-10-150

OAAI

Two-dimensional band dispersion of ultraflat hexagonal bismuthene grown on Ag(111) bulk and quantum-well films

PHYSICAL REVIEW B

IF3.7

2023-10-160

PRE

Quantifying physical insights cooperatively with exhaustive search for Bayesian spectroscopy of X-ray photoelectron spectra

SCIENTIFIC REPORTS

IF3.9

2023-08-140

OAAI

Three-dimensional angle-resolved photoemission study of bulk SiGe single crystals

IF4.5

2023-04-100

OA

Photoemission Spectroscopy Study on Hydrogen Termination Effect on SiO2/Si Structure Fabricated Using H+-Implanted Si Substrate

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2020-08-142

OA

One-dimensionality of the spin-polarized surface conduction and valence bands of quasi-one-dimensional Bi chains on GaSb(110)-(2x1)

PHYSICAL REVIEW B

IF3.7

2020-06-035

OAAI

Corundum insulating phases in highly Ti-doped V2O3 nanocrystals

PHYSICAL REVIEW B

IF3.7

2020-01-164

PREAI

An unexpected surfactant role of immiscible nitrogen in the structural development of silver nanoparticles: an experimental and numerical investigation

IF5.1

2020-01-0126

PREAI

Three-dimensional band structure and surface electron accumulation of rs-CdxZn1-xO studied by angle-resolved photoemission spectroscopy

SCIENTIFIC REPORTS

IF3.9

2019-05-295

OAAI

Temperature-dependent valence state within the metallic phase of BaV10O15 probed by hard x-ray photoelectron spectroscopy

PHYSICAL REVIEW B

IF3.7

2019-01-114

OAAI

Crystal and electronic structural changes during annealing in severely deformed Si containing metastable phases formed by high-pressure torsion

APPLIED PHYSICS LETTERS

IF3.6

2018-09-0513

PREAI

Interfacial carrier dynamics of graphene on SiC, traced by the full-range time-resolved core-level photoemission spectroscopy

APPLIED PHYSICS LETTERS

IF3.6

2018-08-015

PREAI

Synthesis of platinum silicide at platinum/silicon oxide interface by photon irradiation

光子辐照在铂/氧化硅界面合成硅化铂

ACTA MATERIALIA

IF9.3

2018-08-015

OAAI

Electronic properties of Ba1-xSrxV13O18 (x=0,0.2,1) studied using hard x-ray photoelectron spectroscopy

PHYSICAL REVIEW B

IF3.7

2017-05-0910

OAAI

Neutralization of an epitaxial graphene grown on a SiC(0001) by means of palladium intercalation

APPLIED PHYSICS LETTERS

IF3.6

2017-03-2721

PREAI

Time-resolved HAXPES using a microfocused XFEL beam: From vacuum space-charge effects to intrinsic charge-carrier recombination dynamics

SCIENTIFIC REPORTS

IF3.9

2016-10-1221

OAAI

Impurity-Induced First-Order Phase Transitions in Highly Crystalline V2O3 Nanocrystals

高结晶V2O3纳米晶体中杂质诱导的一级相变

ADVANCED MATERIALS INTERFACES

IF4.4

2015-06-223

PREAI

Photo-induced valence change of the sulfur atom in an L-cysteine thin film grown on a silver metal substrate in a saliva-emulated aqueous solution

APPLIED PHYSICS LETTERS

IF3.6

2015-04-272

PREAI