Shengsheng Wei

beijing university of posts and telecommunications

H指数:10

被引数:329

个人简介

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Long-Range Exciton Diffusion and Efficient Hole Transfer in Molecular Non-Fullerene Acceptors with Strong Resonance Structure

长程激子扩散和高效空穴转移存在于具有强共振结构的分子非富勒烯受体中

The Journal of Physical Chemistry Letters

IF0

2026-05-290

PRE

Reliability study of Pt electrode and Pt wire bonding on SiC substrates under high-temperature conditions

高温条件下Pt电极和Pt丝键合在SiC衬底上的可靠性研究

Physica Scripta

IF2.6

2025-12-220

PRE

Enhancing the Reliability of SiC MOS Capacitors by Optimizing the Surface Treatment Process for Etched Silicon Carbide

通过优化蚀刻碳化硅的表面处理工艺来提高SiC MOS电容器的可靠性

Vacuum

IF3.9

2025-12-080

PRE

An ultra-wide range and high-reliability graphene pressure sensor based on membrane-beam structure

基于膜-梁结构的超宽量程和高可靠性石墨烯压力传感器

Measurement

IF5.6

2025-11-190

PRE

Ultrafast Proton-Coupled Electron-Transfer Dynamics in Amino-Type Indole-Triazolopyrimidine Derivatives

超快质子耦合电子转移动力学在氨基型吲哚-三唑嘧啶衍生物中

JOURNAL OF PHYSICAL CHEMISTRY LETTERS

IF4.6

2025-04-230

PRE

Highly Sensitive Graphene MEMS Pressure Sensor with Integrated Membrane and Cross-Beam with Cavity for Extended Pressure Range Testing

高灵敏度石墨烯MEMS压力传感器，集成了带腔体的膜和交叉梁，用于扩展压力范围测试

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2025-04-180

PRE

Enhancing the Consistency and Performance of Graphene-Based Devices via Al Intermediate-Layer-Assisted Transfer and Patterning

NANOMATERIALS

IF4.3

2024-03-250

OAAI

Solid-State Emissive meso-Aryl/Alkyl-Substituted and Heteroatom-Mixed BOPPY Dyes: Syntheses, Structures, Physicochemical, Redox Properties, and Computational Analysis

INORGANIC CHEMISTRY

IF4.7

2024-03-112

PRE

Reliability and Stability Improvement of MOS Capacitors via Nitrogen-Hydrogen Mixed Plasma Pretreatment for SiC Surfaces

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2023-03-294

PRE

The initial oxidation of the 4H-SiC (0001) surface with C-related point defects: Insight by first-principles calculations

APPLIED SURFACE SCIENCE

IF6.9

2023-03-011

PRE

Improving the Sensing Properties of Graphene MEMS Pressure Sensor by Low-Temperature Annealing in Atmosphere

SENSORS

IF3.5

2022-10-215

OAAI

Conduction mechanism and impedance analysis of HfOx-based RRAM at different resistive states

基于HfOx的RRAM在不同阻态下的导电机理及阻抗分析

APPLIED SURFACE SCIENCE

IF6.9

2022-10-0117

PRE

The structural and electronic properties of Carbon-related point defects on 4H-SiC (0001) surface

APPLIED SURFACE SCIENCE

IF6.9

2022-04-0113

PRE

SiC/SiO2 interface properties formed by low-temperature ozone re-oxidation annealing

CERAMICS INTERNATIONAL

IF5.6

2022-04-013

PRE

Oxygen vacancy formation and uniformity of conductive filaments in Si-doped Ta2O5 RRAM

掺硅Ta2O5 RRAM中导电丝的氧空位形成和均匀性

APPLIED SURFACE SCIENCE

IF6.9

2021-09-0126

PRE

Bias temperature instability in SiC metal oxide semiconductor devices

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2021-01-1928

PRE

Luminescent perovskite nanocrystal-epoxy resin composite with high stability against water and air

JOURNAL OF ALLOYS AND COMPOUNDS

IF6.3

2019-06-0121

PREAI

Self-Coupled g-C3N4 van der Waals Heterojunctions for Enhanced Photocatalytic Hydrogen Production

ACS APPLIED ENERGY MATERIALS

IF5.5

2019-05-2827

PREAI

Defect Passivation of Low-Temperature Processed ZnO Electron Transport Layer with Polyethylenimine for PbS Quantum Dot Photovoltaics

ACS APPLIED ENERGY MATERIALS

IF5.5

2019-02-2222

PREAI

Increasing the open-circuit voltage and adsorption stability of squaraine dye binding onto the TiO2 anatase (101) surface via heterocyclic anchoring groups used for DSSC

APPLIED SURFACE SCIENCE

IF6.9

2018-10-0133

PREAI

Shengsheng Wei

个人简介

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