未登录

Ü

Ü. Özgür

department of electrical and computer engineering, virginia commonwealth university, richmond, va, 23284, united states of america

H指数:33

被引数:4,994

个人简介

暂无内容

教育背景

暂无内容

工作经历

暂无内容

荣誉奖项

暂无内容

Numerical performance analysis of dielectric grating integrated mercury cadmium telluride long wavelength infrared photodetector

介质光栅集成汞镉碲长波红外光探测器的数值性能分析

Physica Scripta

IF2.6

2025-11-240

OAAI

Solid-state synthesis of Si1-xGex nanoalloys with composition-tunable energy gaps and visible to near infrared optical properties

IF5.1

2025-01-010

OA

Reduction in density of interface traps determined by C-V analysis in III-nitride-based MOSHFET structure

APPLIED PHYSICS LETTERS

IF3.6

2024-03-112

PRE

Colloidal Synthesis of Homogeneous Ge1-x-y Si y Sn x Nanoalloys with Composition-Tunable Visible to Near-IR Optical Properties

CHEMISTRY OF MATERIALS

IF7

2023-10-162

PRE

Pixel-scale miniaturization of guided mode resonance transmission filters in short wave infrared

IF3.3

2022-03-285

OA

Optically Transparent Antenna Arrays for the Next Generation of Mobile Networks

IEEE OPEN JOURNAL OF ANTENNAS AND PROPAGATION

IF3.6

2022-01-015

OA

Self-formation of high-field domain in epitaxial ZnO and its suppression in ZnO/MgZnO heterostructure

APPLIED PHYSICS LETTERS

IF3.6

2021-06-211

PREAI

Dual-period guided-mode resonance filters for SWIR multi-spectral image sensors

IF3.3

2021-04-3010

PRE

Unusual properties of the RY3 center in GaN

PHYSICAL REVIEW B

IF3.7

2019-07-1820

OAAI

Optically Transparent Antennas and Filters

IEEE ANTENNAS AND PROPAGATION MAGAZINE

IF5.7

2019-06-0173

PREAI

Polarity Control within One Monolayer at ZnO/GaN Heterointerface: (0001) Plane Inversion Domain Boundary

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2018-10-035

PREAI

InGaN stress compensation layers in InGaN/GaN blue LEDs with step graded electron injectors

SUPERLATTICES AND MICROSTRUCTURES

IF3.3

2018-04-019

PREAI

Investigation of high density two-dimensional electron gas in Zn-polar BeMgZnO/ZnO heterostructures

APPLIED PHYSICS LETTERS

IF3.6

2017-11-0118

OAAI

The role of ITO resistivity on current spreading and leakage in InGaN/GaN light emitting diodes

SUPERLATTICES AND MICROSTRUCTURES

IF3.3

2017-11-0118

PREAI

Optical Transitions and Excitonic Properties of Ge1-xSnx Alloy Quantum Dots

JOURNAL OF PHYSICAL CHEMISTRY C

IF3.2

2017-08-1617

PREAI

Optical properties of the organic-inorganic hybrid perovskite CH3NH3PbI3: Theory and experiment

PHYSICAL REVIEW B

IF3.7

2016-08-1751

PREAI

Ultra-small Ge1-xSnx quantum dots with visible photoluminescence

CHEMICAL COMMUNICATIONS

IF4.2

2016-01-0133

PREAI

Improvement of carrier injection symmetry and quantum efficiency in InGaN light-emitting diodes with Mg delta-doped barriers

APPLIED PHYSICS LETTERS

IF3.6

2015-05-0614

OAAI

Nondestructive atomic compositional analysis of BeMgZnO quaternary alloys using ion beam analytical techniques

APPLIED SURFACE SCIENCE

IF6.9

2015-02-0115

OAAI

Improved quantum efficiency in InGaN light emitting diodes with multi-double-heterostructure active regions

APPLIED PHYSICS LETTERS

IF3.6

2012-07-2315

PREAI