Jiuren Zhou - Publications, H-index & Citations

Jiuren Zhou

xidian university

26H指数

105论文数

1.6K被引数

收录论文 20

发表时间

Endurance beyond 10 billion cycles in wurtzite ferroelectrics by confining nitrogen vacancies 通过限制氮空位在纤锌矿铁电体中实现超过100亿次的耐久性

Science

IF45.8

2026-09-10

PREAI

Ruiqing Wang; Feng Zhu; Haoji Qian; Jiuren Zhou; Wenxin Sun; Siying Zheng; Jiajia Chen; Bochang Li; Yan Liu; Peng Zhou; Yue Hao; Genquan Han

Nitrogen-vacancy-driven degradation mechanism in ferroelectric wurtzite AlScN 氮空位驱动的铁电纤锌矿AlScN降解机制

Science China-Information Sciences

IF7.6

2026-08-13

PREAI

Ruiqing Wang; Jiuren Zhou; Xihui Yuan; Feng Zhu; Siying Zheng; Wenxin Sun; Xinghui Wang; Haiwen Xu; Bochang Li; Yan Liu; Genquan Han

Modeling of Polarization Dynamics in HfO₂-Based Ferroelectrics by Reduced L-K Model 基于HfO₂铁电体的极化动力学建模：简化L-K模型

IEEE Electron Device Letters

IF4.5

2026-06-08

PREAI

Bing Chen; Haoran Yu; Wenhao Liu; Shuyu Zhang; Jiayi Zhao; Jifang Cao; Xuecheng Cui; Jiuren Zhou; Xiao Yu; Ran Cheng; Yan Liu; Genquan Han

Biomimetic-voltage nitride-enhanced memristor arrays for femtojoule in-memory biosignal processing 仿生电压氮化物增强型忆阻器阵列用于飞焦耳级存内生物信号处理

Nature Communications

IF15.7

2026-05-06

OAAI

Zijian Wang; Zhejia Zhang; Guobin Zhang; Xuemeng Fan; Pengtao Li; Baicheng Zhu; Yi Tong; Panpan Zhang; Dawei Gao; Bin Yu; Jiuren Zhou; Qing Wan; Yishu Zhang

AlScN-Based Ferroelectric Memcapacitor on Silicon Platform 基于AlScN的铁电存储电容器硅平台

IEEE Electron Device Letters

IF4.5

2026-03-05

PREAI

Wenxin Sun; Xihui Yuan; Ruiqing Wang; Hengrui Zhang; Siying Zheng; Haiwen Xu; Zhen Yuan; Jiuren Zhou; Yan Liu; Yue Hao; Genquan Han

Computationally Driven Advances in Cu-CNT On-Chip Interconnect Materials: From First Principles to Machine Learning 计算驱动下的Cu-CNT片上互连材料进展：从第一性原理到机器学习

ENERGY & ENVIRONMENTAL MATERIALS

IF14.1

2026-02-27

OAAI

Changhong Zhang; Jie Liang; Yi Li; Zhenyu Wang; Haoyuan Li; Zhen Yuan; Jiuren Zhou; Rongmei Chen; Wensheng Zhao; Lei Zhang; Hanshen Xin; Jianhua Zhang

Selective phase growth of van der Waals high-κ Sb2O3 films 范德华高介电常数Sb2O3薄膜的选择性相生长

j mater chem a

IF0

2025-08-29

PREAI

Jing Yu; Ruey Jinq Ong; Wei Han; Atta Ur Rehman; Jiuren Zhou; Genquan Han; Jing-Wen Shi; Chris Tang; Kailang Liu; Wen-Di Li; Hao Wang; Francis Chi-Chung Ling

Collaborative Design of FeRAM via a Joint Ferroelectric Device and Circuit Analysis 通过联合铁电器件与电路分析进行FeRAM协同设计

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

IF2.9

2025-08-07

PREAI

Bo Li; Junfeng Tan; Can Liu; Kai Chen; Tingjie Yang; Huanning Zhang; Xueyang Bai; Wei Mao; Jiuren Zhou; Xiao Yu; Ran Cheng; Guoyong Shi; Bing Chen; Yan Liu; Genquan Han

A parallel computing-in-memory accelerator utilizing FeRAM array with retention loss correction 一种利用具有保持损失校正的FeRAM阵列的并行存内计算加速器

SCIENCE CHINA-INFORMATION SCIENCES

IF7.6

2025-05-14

PREAI

Liu, Can; Shen, Zhihao; Mao, Wei; Li, Bo; Lv, Xiaomeng; Li, Fuyi; Xiao, Peng; Hong, Haiqiao; Zhao, Shirui; Zheng, Siying; Li, Xiaoxi; Yu, Xiao; Zhou, Jiuren; Chen, Bing; Liu, Yan; Han, Genquan

Enhanced fatigue resistance of ferroelectric Al0.65Sc0.35N deposited by physical vapor deposition

SCIENCE CHINA-INFORMATION SCIENCES

IF7.6

2024-04-24

PREAI

Li, Yang; Yao, Danyang; Liu, Yan; Jiang, Zhi; Wang, Ruiqing; Ran, Xu; Zhou, Jiuren; Wang, Qikun; Wu, Guoqiang; Han, Genquan

Recent Progress and Challenges Regarding Carbon Nanotube On-Chip Interconnects

MICROMACHINES

IF3

2022-07-20

OAAI

Xu, Baohui; Chen, Rongmei; Zhou, Jiuren; Liang, Jie

Evolution of the Interfacial Layer and Its Impact on Electric-Field-Cycling Behaviors in Ferroelectric Hf1-xZrxO2 铁电Hf1-xZrxO2中界面层的演化及其对电场循环行为的影响

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2022-02-08

PREAI

Zhang, Fan; Luo, Zheng-Dong; Yang, Qiyu; Zhou, Jiuren; Wang, Jin; Zhang, Zhaohao; Fan, Qikui; Peng, Yue; Wu, Zhenhua; Liu, Fei; Chen, Shiyou; He, Dongsheng; Yin, Huaxiang; Han, Genquan; Liu, Yan; Hao, Yue

A 6.5 nm thick anti-ferroelectric HfAlO x film for energy storage devices with a high density of 63.7 J cm-3

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2021-10-07

PREAI

Zhou, Jiuren; Kang, Yuye; Wang, Xinke; Zhou, Zuopu; Ni, Haotian; Jiao, Leming; Zheng, Zijie; Gong, Xiao

Review of Si-Based GeSn CVD Growth and Optoelectronic Applications

NANOMATERIALS

IF4.3

2021-09-29

OAAI

Miao, Yuanhao; Wang, Guilei; Kong, Zhenzhen; Xu, Buqing; Zhao, Xuewei; Luo, Xue; Lin, Hongxiao; Dong, Yan; Lu, Bin; Dong, Linpeng; Zhou, Jiuren; Liu, Jinbiao; Radamson, Henry H.

ZrOx Negative Capacitance Field-Effect Transistor with Sub-60 Subthreshold Swing Behavior 具有亚60亚阈值摆幅行为的ZrOx负电容场效应晶体管

NANOSCALE RESEARCH LETTERS

IF4.1

2021-02-02

OAAI

Zhang, Siqing; Liu, Huan; Zhou, Jiuren; Liu, Yan; Han, Genquan; Hao, Yue

High mobility germanium-on-insulator p-channel FinFETs

SCIENCE CHINA-INFORMATION SCIENCES

IF7.6

2020-11-25

PREAI

Liu, Huan; Han, Genquan; Zhou, Jiuren; Liu, Yan; Hao, Yue

Low Voltage Operating 2D MoS2Ferroelectric Memory Transistor with Hf1-xZrxO2Gate Structure

NANOSCALE RESEARCH LETTERS

IF4.1

2020-08-02

OAAI

Zhang, Siqing; Liu, Yan; Zhou, Jiuren; Ma, Meng; Gao, Anyuan; Zheng, Binjie; Li, Lingfei; Su, Xin; Han, Genquan; Zhang, Jincheng; Shi, Yi; Wang, Xiaomu; Hao, Yue

Comparative Study of Negative Capacitance Field-Effect Transistors with Different MOS Capacitances

NANOSCALE RESEARCH LETTERS

IF4.1

2019-05-24

OAAI

Li, Jing; Liu, Yan; Han, Genquan; Zhou, Jiuren; Hao, Yue

Cryogenic Ferroelectric Behavior of Wurtzite Ferroelectrics 六方铁电体的低温铁电行为

IEEE Electron Device Letters

IF4.5

PREAI

Ruiqing Wang; Jiuren Zhou; Siying Zheng; Feng Zhu; Wenxin Sun; Haiwen Xu; Bochang Li; Yan Liu; Yue Hao; Genquan Han

N Penetration Enhances Vacancy Filling, Al/Sc-N Bonding, and Ferroelectric Properties in AlScN Films N渗透增强了AlScN薄膜中的空位填充、Al/Sc-N键合和铁电性能。

IEEE Electron Device Letters

IF4.5

PREAI

Xuefeng Yang; Bochang Li; Jiuren Zhou; Xiaoxi Li; Siying Zheng; Yan Liu; Yue Hao; Genquan Han

研究方向