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T

Tao Han

xidian university

H指数:14

被引数:500

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A Novel L-Gate InGaAs/GaAsSb TFET with Improved Performance and Suppressed Ambipolar Effect

IF3

2022-09-055

OAAI

Interface optimization of La-based gate dielectric for molybdenum disulfide field-effect transistors

APPLIED SURFACE SCIENCE

IF6.9

2022-04-013

PRE

Defect Engineering in Thickness-Controlled Bi2O2Se-Based Transistors by Argon Plasma Treatment

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2022-03-2313

PRE

Preparation and Research of Monolayer WS2 FETs Encapsulated by h-BN Material

IF3

2021-08-245

OAAI

Low-Power OR Logic Ferroelectric In-Situ Transistor Based on a CuInP2S6/MoS2 Van Der Waals Heterojunction

基于CuInP2S6/MoS2范德华异质结的低功耗或逻辑铁电原位晶体管

IF4.3

2021-07-319

OAAI

Fabrication and Characterization of MoS2/h-BN and WS2/h-BN Heterostructures

MoS2/h-bn和WS2/h-bn异质结构的制备与表征

IF3

2020-12-1615

OAAI

Research on the Preparation and Spectral Characteristics of Graphene/TMDs Hetero-structures

NANOSCALE RESEARCH LETTERS

IF4.1

2020-11-2512

OAAI

Adjusting transmissivity based on grapheme-h-BN-graphene heterostructure as a tunable phonon-plasmon coupling system in mid-infrared band

JOURNAL OF MATERIALS SCIENCE

IF3.9

2020-10-193

OAAI

A Novel Dopingless Fin-Shaped SiGe Channel TFET with Improved Performance

NANOSCALE RESEARCH LETTERS

IF4.1

2020-10-1734

OAAI

Comprehensive Performance Quasi-Non-Volatile Memory Compatible with Large-Scale Preparation by Chemical Vapor Deposition

IF4.3

2020-07-274

OAAI

Graphene Electro-Optical Switch Modulator by Adjusting Propagation Length Based on Hybrid Plasmonic Waveguide in Infrared Band

基于混合等离子体波导红外波段传输长度调节的石墨烯电光开关调制器

IF3.5

2020-05-188

OAAI

Filtering Characteristics of Phonon Polaritons Waves Based on Dielectric-h-BN-Dielectric Structure in Mid-Infrared Band

IF4.3

2020-05-010

OAAI

The Large-Scale Preparation and Optical Properties of MoS2/WS2 Vertical Hetero-Junction

IF4.6

2020-04-179

OAAI

A Horizontal-Gate Monolayer MoS2 Transistor Based on Image Force Barrier Reduction

IF4.3

2019-09-0211

OAAI

Probing the Field-Effect Transistor with Monolayer MoS2 Prepared by APCVD

用APCVD制备的单层MoS2探测场效应晶体管

IF4.3

2019-08-2710

OAAI

Design and Investigation of the High Performance Doping-Less TFET with Ge/Si0.6Ge0.4/Si Heterojunction

IF3

2019-06-2412

OAAI

Probing the Optical Properties of MoS2 on SiO2/Si and Sapphire Substrates

IF4.3

2019-05-1435

OAAI

Probing the Growth Improvement of Large-Size High Quality Monolayer MoS2 by APCVD

IF4.3

2019-03-147

OAAI

A New Electro-Optical Switch Modulator Based on the Surface Plasmon Polaritons of Graphene in Mid-Infrared Band

IF3.5

2018-12-2813

OAAI

Research on the Factors Affecting the Growth of Large-Size Monolayer MoS2 by APCVD

IF3.2

2018-12-176

OAAI