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H

Haiwu Xie

qinghai normal university

H指数:11

被引数:375

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Design and investigation of a label-free biosensor based on GaSb-source dual-material gate heterojunction tunneling field-effect transistor

基于GaSb源双材料栅异质结隧穿场效应晶体管的标签自由生物传感器的设计与探究

Semiconductor Science and Technology

IF2.1

2026-05-010

PRE

Research and analysis of a tunneling field-effect transistor(FET) biosensor based on dual-workfunction gate and GaSb/AlInSb heterojunction

基于双功函数栅和GaSb/AlInSb异质结的隧道场效应晶体管(FET)生物传感器的研究与分析

Engineering Research Express

IF1.6

2025-12-310

PRE

Analysis of a tunnel field-effect transistor biosensor with dual-material gate heterodielectric structure

具有双材料栅异质介电结构的隧道场效应晶体管生物传感器的分析

SEMICONDUCTOR SCIENCE AND TECHNOLOGY

IF2.1

2025-11-300

PRE

Single-Particle Irradiation Effect and Anti-Irradiation Optimization of a JLTFET with Lightly Doped Source

IF3

2023-07-130

OAAI

Performance Assessment of a Junctionless Heterostructure Tunnel FET Biosensor Using Dual Material Gate

使用双材料栅极的无结异质结构隧道FET生物传感器的性能评估

IF3

2023-03-317

OAAI

Study on Single Event Effect Simulation in T-Shaped Gate Tunneling Field-Effect Transistors

T形栅隧穿场效应晶体管中单事件效应模拟研究

IF3

2021-05-248

OAAI

Study of a Gate-Engineered Vertical TFET with GaSb/GaAs0.5Sb0.5 Heterojunction

IF3.2

2021-03-1510

OAAI

Sensitivity Analysis of Biosensors Based on a Dielectric-Modulated L-Shaped Gate Field-Effect Transistor

IF3

2020-12-2723

OAAI

A Novel Dopingless Fin-Shaped SiGe Channel TFET with Improved Performance

NANOSCALE RESEARCH LETTERS

IF4.1

2020-10-1734

OAAI

Probing the Field-Effect Transistor with Monolayer MoS2 Prepared by APCVD

用APCVD制备的单层MoS2探测场效应晶体管

IF4.3

2019-08-2710

OAAI