D. Spassov - Publications, H-index & Citations

D. Spassov

Institute of Solid State Physics

19H指数

102论文数

1.5K被引数

收录论文 20

发表时间

Characterization of Submicron Ni-, Co-, and Fe-Doped ZnO Fibers Fabricated by Electrospinning and Atomic Layer Deposition 通过电纺和原子层沉积法制备的亚微米Ni-, Co-, 和 Fe-掺杂ZnO纤维的表征

Coatings 2025, Vol. 15, Page 1022

IF2.8

2025-10-01

OAAI

Blagoy Spasov Blagoev; Borislava Georgieva; Albena Paskaleva; Ivalina Avramova; Peter Tzvetkov; Kirilka Starbova; Nikolay Starbov; Krastyo Buchkov; Vladimir Mehandzhiev; Lyubomir Slavov; Penka Terziyska; Dencho Spasov

Recovery Analysis of Sequentially Irradiated and NBT-Stressed VDMOS Transistors

MICROMACHINES

IF3

2024-12-28

OAAI

Djoric-Veljkovic, Snezana; Zivanovic, Emilija; Davidovic, Vojkan; Veljkovic, Sandra; Mitrovic, Nikola; Ristic, Goran; Paskaleva, Albena; Spassov, Dencho; Dankovic, Danijel

Peculiarities of Electric and Dielectric Behavior of Ni- or Fe-Doped ZnO Thin Films Deposited by Atomic Layer Deposition

MATERIALS

IF3.2

2024-07-18

OAAI

Paskaleva, Albena; Spassov, Dencho; Blagoev, Blagoy; Terziyska, Penka

A Reliability Investigation of VDMOS Transistors: Performance and Degradation Caused by Bias Temperature Stress

MICROMACHINES

IF3

2024-04-05

OAAI

Zivanovic, Emilija; Veljkovic, Sandra; Mitrovic, Nikola; Jovanovic, Igor; Djoric-Veljkovic, Snezana; Paskaleva, Albena; Spassov, Dencho; Dankovic, Danijel

Challenges to Optimize Charge Trapping Non-Volatile Flash Memory Cells: A Case Study of HfO2/Al2O3 Nanolaminated Stacks 优化电荷捕获非易失性闪存单元的挑战: HfO2/Al2O3纳米叠层的案例研究

NANOMATERIALS

IF4.3

2023-08-30

OAAI

Spassov, Dencho; Paskaleva, Albena

Magneto-Optical and Muliferroic Properties of Transition-Metal (Fe, Co, or Ni)-Doped ZnO Layers Deposited by ALD

ACS OMEGA

IF4.3

2022-11-14

OAAI

Paskaleva, Albena; Buchkov, Krastyo; Galluzzi, Armando; Spassov, Dencho; Blagoev, Blagoy; Ivanov, Tzvetan; Mehandzhiev, Vladimir; Avramova, Ivalina Avramova; Terzyiska, Penka; Tzvetkov, Peter; Kovacheva, Daniela; Polichetti, Massimiliano

Charge Storage and Reliability Characteristics of Nonvolatile Memory Capacitors with HfO2/Al2O3-Based Charge Trapping Layers

MATERIALS

IF3.2

2022-09-09

OAAI

Spassov, Dencho; Paskaleva, Albena; Guziewicz, Elzbieta; Wozniak, Wojciech; Stanchev, Todor; Ivanov, Tsvetan; Wojewoda-Budka, Joanna; Janusz-Skuza, Marta

Investigation of the Effects of Rapid Thermal Annealing on the Electron Transport Mechanism in Nitrogen-Doped ZnO Thin Films Grown by RF Magnetron Sputtering

NANOMATERIALS

IF4.3

2021-12-22

OAAI

Simeonov, Simeon; Szekeres, Anna; Spassov, Dencho; Anastasescu, Mihai; Stanculescu, Ioana; Nicolescu, Madalina; Aperathitis, Elias; Modreanu, Mircea; Gartner, Mariuca

Radiation Tolerance and Charge Trapping Enhancement of ALD HfO2/Al2O3 Nanolaminated Dielectrics

MATERIALS

IF3.2

2021-02-10

OAAI

Spassov, Dencho; Paskaleva, Albena; Guziewicz, Elzbieta; Davidovic, Vojkan; Stankovic, Srboljub; Djoric-Veljkovic, Snezana; Ivanov, Tzvetan; Stanchev, Todor; Stojadinovic, Ninoslav

Inter-trap tunneling in vanadium doped TiO2 sol-gel films

MATERIALS RESEARCH BULLETIN

IF5.7

2020-07-01

PREAI

Simeonov, S.; Szekeres, A.; Covei, M.; Spassov, D.; Kitin, G.; Predoana, L.; Calderon-Moreno, J. M.; Nicolescu, M.; Preda, S.; Stroescu, H.; Gartner, M.; Zaharescu, M.

Model based precise analysis of the injection currents in Al/ZrO2/Al2O3/ZrO2/SiO2/Si structures for use in charge trapping non-volatile memory devices

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2016-03-01

PREAI

Novkovski, N.; Paskaleva, A.; Skeparovski, A.; Spassov, D.

Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2015-07-30

PREAI

Paskaleva, Albena; Rommel, Mathias; Hutzler, Andreas; Spassov, Dencho; Bauer, Anton J.