Qing‐Tai Zhao - Publications, H-index & Citations

Qing‐Tai Zhao

forschungszentrum julich

33H指数

357论文数

4.6K被引数

收录论文 32

发表时间

Ultrasmooth Sub-Nanometer Chemical SiO2 Surfaces and Enhanced Interface Characteristics via High-pH Fluoride Treatment for Si/HfO2 MOS Devices 超平滑亚纳米级化学SiO2表面及通过高pH氟化物处理实现的Si/HfO2 MOS器件界面特性增强

ACS Applied Materials and Interfaces

IF8.2

2026-03-04

PREAI

Yu-Chen Chang; Mykhaylo Motylenko; Yu-Tzu Liao; Jingxuan Sun; Martin Kasavetov; Viviana Rincón Montes; Qing-Tai Zhao; David Rafaja; Joachim Knoch

GeSn quantum wells as a platform for spin-resolved hole transport GeSn量子阱作为自旋分辨空穴输运的平台

Communications Materials

IF9.6

2025-10-02

OAAI

Prateek Kaul; Jan Karthein; Jonas Buchhorn; Taizo Kawano; Taisei Usubuchi; Jun Ishihara; Nicolas Rotaru; Patrick Del Vecchio; Omar Concepcion; Zoran Ikonic; Detlev Grützmacher; Qing-Tai Zhao; Oussama Moutanabbir; Makoto Kohda; Thomas Schäpers; Dan Buca

Adaptive Epitaxy of C-Si-Ge-Sn: Customizable Bulk and Quantum Structures C-Si-Ge-Sn的自适应外延生长：可定制的块体和量子结构

Advanced Materials

IF26.8

2025-06-11

OAAI

Omar Concepción; Ambrishkumar J. Devaiya; Marvin H. Zoellner; Markus A. Schubert; Florian Bärwolf; Lukas Seidel; Vincent Reboud; Andreas T. Tiedemann; Jin-Hee Bae; Alexei Tchelnokov; Qing-Tai Zhao; Christopher A. Broderick; Michael Oehme; Giovanni Capellini; Detlev Grützmacher; Dan Buca

A Novel Approach to Implementing Artificial Thalamic Neurons with Ferroelectric Transistors 一种利用铁电晶体管实现人工丘脑神经元的新型方法

ADVANCED FUNCTIONAL MATERIALS

IF19

2025-04-25

OAAI

Grenmyr, A; Zhang, JY; Sun, JX; Moto, K; Wiefels, S; Koh, SR; Grützmacher, D; Zhao, QT

Room Temperature Lattice Thermal Conductivity of GeSn Alloys

ACS APPLIED ENERGY MATERIALS

IF5.5

2024-05-15

OAAI

Concepcion, Omar; Tiscareno-Ramirez, Jhonny; Chimienti, Ada Angela; Classen, Thomas; Corley-Wiciak, Agnieszka Anna; Tomadin, Andrea; Spirito, Davide; Pisignano, Dario; Graziosi, Patrizio; Ikonic, Zoran; Zhao, Qing Tai; Gruetzmacher, Detlev; Capellini, Giovanni; Roddaro, Stefano; Virgilio, Michele; Buca, Dan

Isothermal Heteroepitaxy of Ge1-XSnX Structures for Electronic and Photonic Applications

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2023-04-03

OAAI

Concepcion, Omar; Sogaard, Nicolaj B.; Bae, Jin-Hee; Yamamoto, Yuji; Tiedemann, Andreas T.; Ikonic, Zoran; Capellini, Giovanni; Zhao, Qing-Tai; Gruetzmacher, Detlev; Buca, Dan

Artificial Synapses Based on Ferroelectric Schottky Barrier Field-Effect Transistors for Neuromorphic Applications 基于铁电肖特基势垒场效应晶体管的人工突触，用于神经形态应用

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2021-06-25

OAAI

Xi, Fengben; Han, Yi; Liu, Mingshan; Bae, Jin Hee; Tiedemann, Andreas; Gruetzmacher, Detlev; Zhao, Qing-Tai

Experimental examination of tunneling paths in SiGe/Si gate-normal tunneling field-effect transistors

APPLIED PHYSICS LETTERS

IF3.6

2017-12-27

OAAI

Glass, S.; von den Driesch, N.; Strangio, S.; Schulte-Braucks, C.; Rieger, T.; Narimani, K.; Buca, D.; Mantl, S.; Zhao, Q. T.

Experimental I-V and C-V Analysis of Schottky-Barrier Metal-Oxide-Semiconductor Field Effect Transistors with Epitaxial NiSi2 Contacts and Dopant Segregation

CHINESE PHYSICS LETTERS

IF4.2

2017-07-14

PREAI

Wang, Yi-Ze; Liu, Chang; Cai, Jian-Hui; Liu, Qiang; Liu, Xin-Ke; Yu, Wen-Jie; Zhao, Qing-Tai

Correlation of Bandgap Reduction with Inversion Response in (Si)GeSn/High-k/Metal Stacks

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2017-03-02

OAAI

Schulte-Braucks, C.; Narimani, K.; Glass, S.; von den Driesch, N.; Hartmann, J. M.; Ikonic, Z.; Afanas'ev, V. V.; Zhao, Q. T.; Mantl, S.; Buca, D.

Low Temperature Deposition of High-k/Metal Gate Stacks on High-Sn Content (Si)GeSn-Alloys 高Sn含量 (Si)GeSn合金上的高k/金属栅叠层的低温沉积

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2016-05-11

OAAI

Schulte-Braucks, C.; von den Driesch, N.; Glass, S.; Tiedemann, A. T.; Breuer, U.; Besmehn, A.; Hartmann, J-M.; Ikonic, Z.; Zhao, Q. T.; Mantl, S.; Buca, D.

High performance strained Si0.5Ge0.5 quantum-well p-MOSFETs fabricated using a high-κ/metal-gate last process

SUPERLATTICES AND MICROSTRUCTURES

IF3.3

2015-07-01

PREAI

Liu, Chang; Wen, Jiao; Yu, Wenjie; Zhang, Bo; Xue, Zhongying; Chang, Yongwei; Zhu, Lei; Liu, Xinke; Zhao, Yi; Zhang, Miao; Wang, Xi; Zhao, Qing-Tai

Equivalent Trap Energy Level Extraction for SiGe Using Gate-Induced-Drain-Leakage Current Analysis

CHINESE PHYSICS LETTERS

IF4.2

2014-10-15

PREAI

Liu Chang; Yu Wen-Jie; Zhang Bo; Xue Zhong-Ying; Wu Wang-Ran; Zhao Yi; Zhao Qing-Tai

Mobility Enhancement and Gate-Induced-Drain-Leakage Analysis of Strained-SiGe Channel p-MOSFETs with Higher-κ LaLuO3 Gate Dielectric

CHINESE PHYSICS LETTERS

IF4.2

2014-01-21

PREAI

Yu Wen-Jie; Zhang Bo; Liu Chang; Xue Zhong-Ying; Chen Ming; Zhao Qing-Tai

Ultrathin highly uniform Ni(Al) germanosilicide layer with modulated B8 type Ni5(SiGe)3 phase formed on strained Si1-xGex layers

APPLIED PHYSICS LETTERS

IF3.6

2013-12-05

PREAI

Liu, Linjie; Jin, Lei; Knoll, Lars; Wirths, Stephan; Nichau, Alexander; Buca, Dan; Mussler, Gregor; Hollaender, Bernhard; Xu, Dawei; Di, Zeng Feng; Zhang, Miao; Zhao, Qing-Tai; Mantl, Siegfried

Self-assembled patterning of ultrathin silicides by local oxidation

MRS BULLETIN

IF4.9

2013-11-29

PREAI

Mantl, S; Zhao, QT; Kabius, B

Unipolar behavior of asymmetrically doped strained Si0.5Ge0.5 tunneling field-effect transistors

APPLIED PHYSICS LETTERS

IF3.6

2012-09-17

OAAI

Schmidt, M.; Minamisawa, R. A.; Richter, S.; Schaefer, A.; Buca, D.; Hartmann, J. M.; Zhao, Q. -T.; Mantl, S.