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N

N. Garro

universitat de valencia

H指数:26

被引数:1,841

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Interfacial forces driving conformation and charge transfer in protoporphyrin IX–graphene based nanohybrids

界面力驱动原卟啉IX-石墨烯基纳米杂化材料的构象和电荷转移

IF11.6

2025-12-190

OAAI

Co-localized scanning probe microscopy-Raman scattering studies of hybrid plasmonic substrates for SERS

共定位扫描探针显微镜-拉曼散射对SERS用杂化等离激元衬底的研究

Applied Surface Science

IF6.9

2025-08-090

OA

Novel Ultra-High-Performance Concrete (UHPC) Enhanced by Superhydrophobic and Self-Luminescent Features

IF3.3

2024-01-265

OA

Exploring the structure and electronic properties of individual hybrid GO/rGO flakes

APPLIED SURFACE SCIENCE

IF6.9

2024-01-013

OAAI

Boosting Photoluminescence in MAPbBr3 Single Crystals through Laser-Based Surface Modification

IF6.7

2023-12-012

PRE

Facile and Low-Cost Fabrication of SiO2-Covered Au Nanoislands for Combined Plasmonic Enhanced Fluorescence Microscopy and SERS

IF4.3

2023-10-080

OA

Growth of zinc-blende GaN on muscovite mica by molecular beam epitaxy

分子束外延法在白云母上生长闪锌矿GaN

IF2.8

2020-10-124

OA

Mg and In Codoped p-type AIN Nanowires for pn Junction Realization

IF9.1

2019-11-1433

OAAI

Elemental Distribution and Structural Characterization of GaN/InGaN Core-Shell Single Nanowires by Hard X-ray Synchrotron Nanoprobes

IF4.3

2019-05-033

OAAI

Polarity conversion of GaN nanowires grown by plasma-assisted molecular beam epitaxy

APPLIED PHYSICS LETTERS

IF3.6

2019-04-3012

OAAI

Reprint of: Optical properties of wurtzite GaN/AlN quantum dots grown on non-polar planes: The effect of stacking faults in the reduction of the internal electric field

重印: 在非极性平面上生长的纤锌矿GaN/AlN量子点的光学性质: 堆垛层错对内部电场降低的影响

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2016-11-010

PREAI

Optical properties of wurtzite GaN/AlN quantum dots grown on non-polar planes: The effect of stacking faults in the reduction of the internal electric field

生长在非极性平面上的纤锌矿GaN/AlN量子点的光学性质: 堆垛层错对内部电场降低的影响

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2016-07-012

OAAI

Non-resonant Raman spectroscopy of individual ZnO nanowires via Au nanorod surface plasmons

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2016-01-017

PREAI

Assessment of Polarity in GaN Self-Assembled Nanowires by Electrical Force Microscopy

通过电力显微镜评估GaN自组装纳米线中的极性

IF9.1

2015-09-2343

PREAI

Structural characterization of selective area growth GaN nanowires by non-destructive optical and electrical techniques

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2015-07-023

PREAI

Extended x-ray absorption fine structure in Ga1-xMnxN/SiC films with high Mn content

PHYSICAL REVIEW B

IF3.7

2011-05-263

PREAI

Inhomogeneous free-electron distribution in InN nanowires: Photoluminescence excitation experiments

PHYSICAL REVIEW B

IF3.7

2010-09-1725

OAAI

Reversed polarized emission in highly strained a-plane GaN/AlN multiple quantum wells

PHYSICAL REVIEW B

IF3.7

2010-09-0310

PREAI

Optical studies of MBE-grown InN nanocolumns: Evidence of surface electron accumulation

PHYSICAL REVIEW B

IF3.7

2009-03-0649

PREAI

A Mesoporous 3D Hybrid Material with Dual Functionality for Hg2+ Detection and Adsorption

CHEMISTRY-A EUROPEAN JOURNAL

IF3.7

2008-09-15116

PREAI