A. Cros

universitat de valencia

H指数:25

被引数:1,970

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Thermal strain, lattice parameters and thermal expansion coefficients of GaN structures for power devices analyzed by Raman microscopy

功率器件中GaN结构的应变、晶格参数和热膨胀系数的拉曼显微镜分析

Materials Science in Semiconductor Processing

IF4.6

2026-03-050

OAAI

Interfacial forces driving conformation and charge transfer in protoporphyrin IX–graphene based nanohybrids

界面力驱动原卟啉IX-石墨烯基纳米杂化材料的构象和电荷转移

Carbon

IF11.6

2025-12-190

OAAI

Exploring Plant Surface Chemical Variability: Lettuce Leaf as Model

探索植物表面化学变异性：以生菜叶片为模型

Physiologia Plantarum

IF3.6

2025-10-160

OAAI

Co-localized scanning probe microscopy-Raman scattering studies of hybrid plasmonic substrates for SERS

共定位扫描探针显微镜-拉曼散射对SERS用杂化等离激元衬底的研究

Applied Surface Science

IF6.9

2025-08-090

Secondary electron emission yield in thick dielectric materials: a comparison between Kelvin probe and capacitive methods

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2024-07-121

Exploring the structure and electronic properties of individual hybrid GO/rGO flakes

APPLIED SURFACE SCIENCE

IF6.9

2024-01-013

OAAI

Boosting Photoluminescence in MAPbBr3 Single Crystals through Laser-Based Surface Modification

ACS PHOTONICS

IF6.7

2023-12-012

PRE

Facile and Low-Cost Fabrication of SiO2-Covered Au Nanoislands for Combined Plasmonic Enhanced Fluorescence Microscopy and SERS

NANOMATERIALS

IF4.3

2023-10-080

Shallow donor and DX state in Si doped AlN nanowires grown by molecular beam epitaxy

APPLIED PHYSICS LETTERS

IF3.6

2021-12-286

Growth of zinc-blende GaN on muscovite mica by molecular beam epitaxy

分子束外延法在白云母上生长闪锌矿GaN

nanotechnology

IF2.8

2020-10-124

Strain relaxation, extended defects and doping effects in InxGa1-xN/GaN heterostructures investigated by surface photovoltage

APPLIED SURFACE SCIENCE

IF6.9

2020-06-013

OAAI

Mg and In Codoped p-type AIN Nanowires for pn Junction Realization

NANO LETTERS

IF9.1

2019-11-1433

OAAI

Polarity conversion of GaN nanowires grown by plasma-assisted molecular beam epitaxy

APPLIED PHYSICS LETTERS

IF3.6

2019-04-3012

OAAI

Layered-Expanded Mesostructured Silicas: Generalized Synthesis and Functionalization

NANOMATERIALS

IF4.3

2018-10-116

OAAI

Reprint of: Optical properties of wurtzite GaN/AlN quantum dots grown on non-polar planes: The effect of stacking faults in the reduction of the internal electric field

重印: 在非极性平面上生长的纤锌矿GaN/AlN量子点的光学性质: 堆垛层错对内部电场降低的影响

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2016-11-010

PREAI

Phonon-plasmon coupling in Si doped GaN nanowires

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2016-11-014

OAAI

Special Issue: III-Nitride Hanostructures Preface

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2016-11-010

PREAI

Surface properties of AlInGaN/GaN heterostructure

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2016-11-018

OAAI

Optical properties of wurtzite GaN/AlN quantum dots grown on non-polar planes: The effect of stacking faults in the reduction of the internal electric field

生长在非极性平面上的纤锌矿GaN/AlN量子点的光学性质: 堆垛层错对内部电场降低的影响

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2016-07-012

OAAI

Nanotexturing To Enhance Photoluminescent Response of Atomically Thin Indium Selenide with Highly Tunable Band Gap

NANO LETTERS

IF9.1

2016-04-19179

OAAI

A. Cros

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