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D

D. S. Rawal

defence research & development organisation (drdo)

H指数:18

被引数:890

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Demonstration of Fe-Doped GaN Buffer HEMT to Achieve fMAX of 167 GHz

展示Fe掺杂GaN缓冲层HEMT器件实现fMAX为167 GHz

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

IF1.9

2025-11-010

PRE

Small Signal and Large Signal Analysis of 150 nm GaN HEMT with Optimized Field Plates for Ku-Band Application

150 nm GaN HEMT器件在Ku波段应用中的小信号和大信号分析（优化场板）

IETE TECHNICAL REVIEW

IF1.8

2025-10-010

PRE

Optimized ALD-ZnO Thin Films for High-Performance 12 μm Pixel Microbolometers: Fabrication, Simulation, and Design Strategies for Infrared Sensing

用于高性能12 μm像素微测辐射热计的优化ALD-ZnO薄膜：红外传感的制备、模拟与设计策略

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2025-09-010

PRE

Role of in-situ SiNx in ohmic contact realization in AlN/GaN HEMTs

原位SiNx在AlN/GaN HEMTs欧姆接触实现中的作用

materials science materials in electronics

IF0

2025-07-290

PRE

Effect of compositionally co-related and orderly varying indium molar content on the performance of In0.15Ga0.85N/InxGa(1-x)N laser diode structure

OPTICAL AND QUANTUM ELECTRONICS

IF4

2024-01-271

PRE

Strategic enhancement of oxygen defects in ZnO from ZnS for water splitting to generate green electricity by hydroelectric cell

APPLIED MATERIALS TODAY

IF6.9

2023-10-0110

PRE

Efficacy of back barrier engineered π-gate InAlN/GaN high electron mobility transistors for high-power applications

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2023-07-123

PRE

Suitability of thin-GaN for AlGaN/GaN HEMT material and device

JOURNAL OF MATERIALS SCIENCE

IF3.9

2022-03-078

PRE

Analysis of the post-stress recovery of reverse leakage current in GaN HEMTs

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2022-01-017

PRE

Interplay Between γ-Ray Irradiation and 3DEG for Dosimeter Applications

IF3.6

2022-01-013

OA

Analytical model to evaluate threshold voltage of GaN based HEMT involving nanoscale material parameters

SUPERLATTICES AND MICROSTRUCTURES

IF3.3

2021-04-012

OAAI

Nanoscale structural parameters based analytical model for GaN HEMTs

SUPERLATTICES AND MICROSTRUCTURES

IF3.3

2019-06-016

PREAI

Molecular Beam Epitaxy growth and characterization of silicon - Doped InAs dot in a well quantum dot infrared photo detector (DWELL-QDIP)

INFRARED PHYSICS & TECHNOLOGY

IF3.4

2015-05-017

PREAI

Effect of BCl3 concentration and process pressure on the GaN mesa sidewalls in BCl3/Cl2 based inductively coupled plasma etching

BCl3/Cl2基感应耦合等离子体刻蚀中BCl3浓度和工艺压力对GaN台面侧壁的影响

IF3.9

2012-07-0128

PREAI

Study of inductively coupled Cl2/BCl3 plasma process for high etch rate selective etching of via-holes in GaAs

电感耦合Cl2/BCl3等离子体工艺对GaAs过孔的高刻蚀速率选择性刻蚀研究

IF3.9

2010-09-018

PREAI

Review: Back-side via hole etching process for grounding GaAs based monolithic microwave integrated circuits

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2005-01-0110

PREAI

Anisotropic etching of GaAs using CCl2F2/CCl4 gases to fabricate 200 μm deep via holes for grounding MMICs

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2003-01-0112

PREAI