Jin-Hyuk Bae

Kyungpook National University

H指数:26

被引数:4,465

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Analysis of Multi-Gas Molecule Interactions in Ambient Air on Solution-Processed Indium Zinc Oxide Thin-Film Transistors for High-Performance Chemical Sensors

分析环境空气中多气体分子相互作用对溶液法制备的氧化铟锌薄膜晶体管高性能化学传感器的影响

Electronics

IF2.6

2026-09-200

Decoupling Reversible Interface Trapping and Irreversible Bulk Transitions in Solution-Processed Indium Zinc Oxide Thin-Film Transistors

解耦溶液法制备的氧化铟锌薄膜晶体管中可逆界面陷阱与不可逆体相转变

Nanomaterials

IF4.3

2026-08-180

Enhancing switching characteristics of precursor-concentration controlled Ag4.53Te3 nanoparticle-based RRAM devices

通过前驱体浓度控制的Ag4.53Te3纳米颗粒基RRAM器件的开关特性增强

Journal of Science-Advanced Materials and Devices

IF6.8

2026-08-010

OAAI

Dependence of stretched exponential function-based lifetime prediction accuracy on trapping dynamics in enhancement-mode oxide thin-film transistors

基于拉伸指数函数的寿命预测精度对增强型氧化物薄膜晶体管中俘获动力学的依赖性

journal of science: advanced materials and devices

IF0

2026-04-020

Solution-crystallized and conductivity-tailored ultrathin-body indium oxide for high-bias-stress-robust enhancement-mode transistors

journal of science: advanced materials and devices

IF0

2026-01-200

OAAI

Solution-Processed, High-Performance, Transparent Near-Infrared Photodetectors Based on Ag x Te Colloidal Quantum Dot–Decorated SnO2 Channels

溶液法制备、高性能、透明的基于Ag<sub>x</sub>Te胶体量子点修饰的SnO<sub>2</sub>通道近红外光电探测器

ACS Applied Materials & Interfaces

IF0

2026-01-010

PRE

Effects of Annealing Temperature Combinations in InOx/AlOx Heterostructure for High-Performance and Stable Solution-Processed Junctionless Transistors

退火温度组合对InOx/AlOx异质结构中高性能和稳定溶液法制备结less晶体管的影响

Materials 2025, Vol. 18, Page 5142

IF3.2

2025-11-180

OAAI

Retention framework for analysing trapping dynamics in solution-processed metal-oxide semiconductors

用于分析溶液处理的金属氧化物半导体中俘获动力学的保留框架

NPG Asia Materials

IF8.3

2025-11-070

OAAI

Noble Design of metallic semi-hierarchical nanostructures for overcoming absorption limitations in lead-free Cs2AgBiBr6 perovskite photovoltaic devices

金属半分级纳米结构的卓越设计，用于克服无铅Cs2AgBiBr6钙钛矿光伏器件中的吸收限制

Solar Energy Materials and Solar Cells

IF6.3

2025-11-030

PRE

Optimizing Annealing Temperature for Enhanced Electrical Performance and Stability of Solution-Processed In2O3 Thin-Film Transistors

优化退火温度以提高溶液法制备In2O3薄膜晶体管的电学性能和稳定性

Micromachines 2025, Vol. 16, Page 1091

IF3

2025-09-300

OAAI

Electrically and environmentally stable nitric acid-assisted SnO2 films for the active channel layer of thin-film transistors

电学和环境稳定的硝酸辅助SnO2薄膜，用于薄膜晶体管的有源通道层

MATERIALS TODAY ADVANCES

IF8

2025-06-010

Uncovering the underlying electromagnetic mechanism of lead-free all-perovskite tandem solar cells with ZnO moth-eye antireflection layers

DYES AND PIGMENTS

IF4.2

2025-04-010

PRE

Enhancing the nonvolatile properties of sol-gel-processed Y2O3 RRAM devices by suppressing oxygen vacancy formation

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2025-03-010

PRE

Complementary resistive switching characteristics of solid electrolyte chalcogenide AgxTe nanoparticles for high-density crossbar random access memory

用于高密度交叉随机存取存储器的固体电解质硫族化物AgxTe纳米颗粒的互补电阻开关特性

MATERIALS TODAY NANO

IF8.2

2024-12-011

PRE

Dynamical control of nanoscale electron density in atomically thin n-type semiconductors via nano-electric pulse generator

SCIENCE ADVANCES

IF12.5

2024-11-150

OAAI

Improving the Nonvolatile Memory Characteristics of Sol-Gel-Processed Y2O3 RRAM Devices Using Mono-Ethanolamine Additives

MATERIALS

IF3.2

2024-10-280

OAAI

Quantum tunneling high-speed nano-excitonic modulator

NATURE COMMUNICATIONS

IF15.7

2024-10-090

OAAI

Verifying the physical role of upper-active-layer on charge transport together with bias stability in bilayer-channel oxide thin-film transistors

SURFACES AND INTERFACES

IF6.3

2024-08-010

PRE

A Current Development of Energy Harvesting Systems for Energy-Independent Bioimplantable Biosensors

用于能量无关的生物植入式生物传感器的能量收集系统的当前发展

SMALL

IF12.1

2024-07-100

PRE

UV/Ozone-Treated and Sol-Gel-Processed Y2O3 Insulators Prepared Using Gelation-Delaying Precursors

NANOMATERIALS

IF4.3

2024-05-011

OAAI

Jin-Hyuk Bae

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教育背景

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