Kwangeun Kim

korea aerospace university

H指数:22

被引数:1,286

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Single-crystalline Ge/GaAs p-i-n heterojunctions with photoresponse on recycled polypropylene substrates

单晶Ge/GaAs p-i-n异质结在回收聚丙烯基板上的光响应

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

IF2.8

2026-10-250

PRE

Alignment and 3D georeferencing of tunnel coaxial hyperspectral scanning system data for mine drift exploration

隧道同轴高光谱扫描系统数据在矿道勘探中的配准与三维地理参考

Geo-Spatial Information Science

IF5.5

2026-08-110

Enhancing switching characteristics of precursor-concentration controlled Ag4.53Te3 nanoparticle-based RRAM devices

通过前驱体浓度控制的Ag4.53Te3纳米颗粒基RRAM器件的开关特性增强

Journal of Science-Advanced Materials and Devices

IF6.8

2026-08-010

OAAI

SWIR Hyperspectral Reflectance Spectroscopy for Lithium Exploration in Pegmatites from Boam Deposit Area in Uljin, South Korea

韩国蔚珍郡Boam矿床地区伟晶岩中锂勘探的短波红外高光谱反射光谱学

Natural Resources Research

IF5

2026-07-300

PRE

Stacked Si/GaN tunnel junction flip-chip light-emitting diodes with improved external quantum efficiency

叠层Si/GaN隧穿结倒装芯片发光二极管，具有改进的外部量子效率

Results in Physics

IF4.6

2026-03-100

OAAI

Single-Crystalline Si Stacked AlGaN/GaN High-Electron-Mobility Transistors with Enhanced Two-Dimensional Electron Gas Density

单晶硅堆叠的AlGaN/GaN高电子迁移率晶体管，具有增强的二维电子气密度

Micromachines 2025, Vol. 16, Page 1214

IF0

2025-10-250

OAAI

Electrically and environmentally stable nitric acid-assisted SnO2 films for the active channel layer of thin-film transistors

电学和环境稳定的硝酸辅助SnO2薄膜，用于薄膜晶体管的有源通道层

MATERIALS TODAY ADVANCES

IF8

2025-06-010

Stacked crystalline nanomembrane GaAs/Si tunnel diodes on polypropylene substrates derived from disposable masks

基于一次性口罩的聚丙烯基底上堆叠的结晶纳米膜GaAs/Si隧穿二极管

MATERIALS LETTERS

IF2.7

2025-05-010

PRE

Enhancing the nonvolatile properties of sol-gel-processed Y2O3 RRAM devices by suppressing oxygen vacancy formation

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2025-03-010

PRE

Band Alignment of Stacked Crystalline Si/GaN pn Heterostructures Interfaced with an Amorphous Region Using X-Ray Photoelectron Spectroscopy

MATERIALS

IF3.2

2024-12-130

OAAI

Complementary resistive switching characteristics of solid electrolyte chalcogenide AgxTe nanoparticles for high-density crossbar random access memory

用于高密度交叉随机存取存储器的固体电解质硫族化物AgxTe纳米颗粒的互补电阻开关特性

MATERIALS TODAY NANO

IF8.2

2024-12-011

PRE

Improving the Nonvolatile Memory Characteristics of Sol-Gel-Processed Y2O3 RRAM Devices Using Mono-Ethanolamine Additives

MATERIALS

IF3.2

2024-10-280

OAAI

UV/Ozone-Treated and Sol-Gel-Processed Y2O3 Insulators Prepared Using Gelation-Delaying Precursors

NANOMATERIALS

IF4.3

2024-05-011

OAAI

High-detectivity silver telluride nanoparticle-based near-infrared photodetectors functionalized with surface-plasmonic gold nanoparticles

用表面等离子体金纳米颗粒功能化的基于高探测率碲化银纳米颗粒的近红外光电探测器

APPLIED SURFACE SCIENCE

IF6.9

2024-05-013

PRE

Effect of Electrochemically Active Top Electrode Materials on Nanoionic Conductive Bridge Y2O3 Random-Access Memory

NANOMATERIALS

IF4.3

2024-03-160

OAAI

Sol-Gel-Processed Y2O3-Al2O3 Mixed Oxide-Based Resistive Random-Access-Memory Devices

溶胶-凝胶处理的Y2O3-Al2O3混合氧化物基电阻式随机存取存储器件

NANOMATERIALS

IF4.3

2023-08-311

OAAI

Sol-Gel-Processed Y2O3 Multilevel Resistive Random-Access Memory Cells for Neural Networks

NANOMATERIALS

IF4.3

2023-08-276

OAAI

A tunnel coaxial 3D hyperspectral scanning system for underground mine investigation

SCIENTIFIC REPORTS

IF3.9

2023-06-271

OAAI

Improved Negative Bias Stability of Sol-Gel-Processed SnO2 Thin-Film Transistors with Vertically Controlled Carrier Concentrations

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2023-04-195

PRE

Improved Tunneling Property of p plus Si Nanomembrane/n plus GaAs Heterostructures through Ultraviolet/Ozone Interface Treatment

INORGANICS

IF3

2022-11-281

Kwangeun Kim

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