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T

Tao Zhang

xidian university

H指数:19

被引数:1,149

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A Performance-Enhanced p-Channel GaN MESFET With Tungsten Gate and High I_ON/ I_OFF Ratio on SiC Substrate Operational at 525 K

一种具有钨栅极和高 I<sub>ON</sub>/ I<sub>OFF</sub> 比的、性能增强型 p-沟道 GaN MESFET，其衬底为 SiC，可在 525 K 下工作

IEEE Transactions on Electron Devices

IF3.2

2025-08-010

PRE

Performance study of radiation heating system coupled with solar photovoltaic and graphene coating

太阳能光伏与石墨烯涂层耦合的辐射加热系统性能研究

IF6.6

2025-06-010

PRE

The Barrier Inhomogeneity and the Electrical Characteristics of W/Au β-Ga2O3 Schottky Barrier Diodes

势垒不均匀性与W/Au β-Ga2O3肖特基势垒二极管的电学特性

IF3

2025-03-250

OA

A 614 MW/cm2 AlGaN-channel Schottky barrier diode with high breakdown voltage and high temperature sensitivity

APPLIED PHYSICS LETTERS

IF3.6

2025-01-091

PRE

Comprehensive study of Schottky-gated p-channel GaN field-effect transistors

APPLIED PHYSICS LETTERS

IF3.6

2024-12-040

PRE

An energy-band modulated p-GaN/InGaN/AlN p-channel MESFET with high ION/IOFF ratio and steep subthreshold swing

APPLIED PHYSICS LETTERS

IF3.6

2024-04-176

PRE

Interface state analysis of Schottky-gated p-AlGaN/u-GaN/AlGaN p-FET with negligible hysteresis at high temperatures

APPLIED PHYSICS LETTERS

IF3.6

2023-09-265

PRE

High-density 2D hole gas in p-GaN/AlN/AlGaN on a silicon substrate with polarization-enhanced Mg ionization

具有极化增强Mg电离的硅衬底上p-gan/AlN/AlGaN中的高密度2D空穴气体

Fundamental Research

IF6.3

2023-08-060

OAAI

Incorporation of a Polyfluorinated Acrylate Additive for High-Performance Quasi-2D Perovskite Light-Emitting Diodes

analytica chimica acta

IF13.5

2023-01-014

OA

Mechanism of current-collapse free for lateral GaN Schottky barrier diodes utilizing polarization-induced hole injection

APPLIED PHYSICS LETTERS

IF3.6

2022-06-064

PRE

Mechanism of low Ohmic contact resistance to p-type GaN by suppressed edge dislocations

APPLIED PHYSICS LETTERS

IF3.6

2022-05-3115

PRE

Mechanistic influence on uniformity of sheet resistance of AlGaN/GaN HEMT grown on Si substrate with the graded AlGaN buffer layers

IF3.9

2022-05-0110

PRE

Current transport mechanism of AlGaN-channel Schottky barrier diode with extremely low leakage current and high blocking voltage of 2.55 kV

APPLIED PHYSICS LETTERS

IF3.6

2022-02-285

PRE

Investigation on the interface trap characteristics in a p-channel GaN MOSFET through temperature-dependent subthreshold slope analysis

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2021-11-2610

PRE

Effects of the pretreatment of Si substrate before the pre-deposition of Al on GaN-on-Si

SUPERLATTICES AND MICROSTRUCTURES

IF3.3

2021-11-012

PREAI

Lateral GaN Schottky Barrier Diode for Wireless High-Power Transfer Application With High RF/DC Conversion Efficiency: From Circuit Construction and Device Technologies to System Demonstration

IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS

IF7.2

2020-08-0143

PREAI

Interdigital Structure Enhanced the Current Spreading and Light Output Power of GaN-Based Light Emitting Diodes

IF3.6

2020-01-010

OAAI

Gamma irradiation impact on GaN quasi-vertical Schottky barrier diodes

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2019-11-118

PREAI

Study on Optimal Parameters of Wireless Power Transfer via Magnetic Resonance Coupling

磁耦合谐振式无线电能传输的最优参数研究

proceedings of the

IF0

2019-06-010

PREAI

Composition Dependence of Structural and Electronic Properties of Quaternary InGaNBi

NANOSCALE RESEARCH LETTERS

IF4.1

2019-05-289

OAAI