Shiro Hara - Publications, H-index & Citations

Shiro Hara

机构信息待补充

25H指数

301论文数

2.1K被引数

收录论文 17

发表时间

Quartz crystal microbalance for real-time monitoring chlorosilane gas transport in slim vertical cold wall chemical vapor deposition reactor

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2020-02-01

PREAI

Takahashi, Toshinori; Otani, Mana; Muroi, Mitsuko; Irikura, Kenta; Matsuo, Miya; Yamada, Ayami; Habuka, Hitoshi; Ishida, Yuuki; Ikeda, Shin-Ichi; Hara, Shiro

Minimal multi-target plasma sputtering tool

VACUUM

IF3.9

2020-01-01

PREAI

Takahashi, Kazunori; Saito, Taichi; Ando, Akira; Yabuta, Yuki; Mizuguchi, Hisashi; Yamamoto, Naoko; Kamei, Ryuichiro; Hara, Shiro

Enhancement of downstream plasma density by a stepped-diameter radiofrequency plasma source under a static magnetic field for a compact sputtering reactor

VACUUM

IF3.9

2019-05-01

PREAI

Saito, Taichi; Takahashi, Kazunori; Ando, Akira; Hara, Shiro

Real time evaluation of silicon epitaxial growth process by exhaust gas measurement using quartz crystal microbalance

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2018-12-01

PREAI

Muroi, Mitsuko; Matsuo, Miya; Habuka, Hitoshi; Ishida, Yuuki; Ikeda, Shin-Ichi; Hara, Shiro

Advantages of a slim vertical gas channel at high SiHCl3 concentrations for atmospheric pressure silicon epitaxial growth

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2018-11-01

PREAI

Irikura, Kenta; Muroi, Mitsuko; Yamada, Ayami; Matsuo, Miya; Habuka, Hitoshi; Ishida, Yuuki; Ikeda, Shin-Ichi; Hara, Shiro

Transport phenomena in a slim vertical atmospheric pressure chemical vapor deposition reactor utilizing natural convection

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2017-11-01

PREAI

Yamada, Ayami; Li, Ning; Matsuo, Miya; Muroi, Mitsuko; Habuka, Hitoshi; Ishida, Yuuki; Ikeda, Shin-Ichi; Hara, Shiro

Transport of a helicon plasma by a convergent magnetic field for high speed and compact plasma etching 通过会聚磁场传输螺旋等离子体以进行高速和紧凑的等离子体蚀刻

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2014-09-18

PREAI

Takahashi, Kazunori; Motomura, Taisei; Ando, Akira; Kasashima, Yuji; Kikunaga, Kazuya; Uesugi, Fumihiko; Hara, Shiro

ASTER DEM performance ASTER DEM性能

IEEE TRANSACTIONS ON GEOSCIENCE AND REMOTE SENSING

IF8.6

2005-12-01

194

PREAI

Fujisada, H; Bailey, GB; Kelly, GG; Hara, S; Abrams, MJ

Control of interface states at metal/6H-SiC(0001) interfaces

PHYSICAL REVIEW B

IF3.7

2004-07-22

PREAI

Teraji, T; Hara, S

Stability of N- and Ga-polarity GaN surfaces during the growth interruption studied by reflection high-energy electron diffraction

APPLIED PHYSICS LETTERS

IF3.6

2000-12-11

PREAI

Shen, XQ; Ide, T; Cho, SH; Shimizu, M; Hara, S; Okumura, H

Characterization of the 6H-SiC(0001) surface and the interface with Ti layer with the Schottky limit

APPLIED SURFACE SCIENCE

IF6.9

2000-08-01

PREAI

Hara, S

Hydrogen-induced 3 x 1 phase of the Si-rich 3C-SiC(001) surface

PHYSICAL REVIEW B

IF3.7

2000-01-15

OAAI

Yeom, HW; Matsuda, I; Chao, YC; Hara, S; Yoshida, S; Uhrberg, RIG

Surface states of the 3C-SiC(001)-c(4 x 2) surface studied using angle-resolved photoemission

PHYSICAL REVIEW B

IF3.7

2000-01-15

PREAI

Duda, L; Johansson, LSO; Reihl, B; Yeom, HW; Hara, S; Yoshida, S

Electronic structure of the Si-rich 3C-SiC(001)3x2 surface

PHYSICAL REVIEW B

IF3.7

1998-10-15

PREAI

Yeom, HW; Chao, YC; Matsuda, I; Hara, S; Yoshida, S; Uhrberg, RIG

Ideal ohmic contact to n-type 6H-SiC by reduction of Schottky barrier height

APPLIED PHYSICS LETTERS

IF3.6

1997-08-04

PREAI

Teraji, T; Hara, S; Okushi, H; Kajimura, K

Control of Schottky and ohmic interfaces by unpinning Fermi level

APPLIED SURFACE SCIENCE

IF6.9

1997-06-01

OAAI

Hara, S; Teraji, T; Okushi, H; Kajimura, K

Pinning-controlled ohmic contacts: Application to SiC(0001)

APPLIED SURFACE SCIENCE

IF6.9

1996-11-01

PREAI

Hara, S; Teraji, T; Okushi, H; Kajimura, K

研究方向