J. Montserrat - Publications, H-index & Citations

J. Montserrat

Institute of Microelectronics of Barcelona

22H指数

192论文数

2.0K被引数

收录论文 28

发表时间

Impact of Si ion implantation on α-Ga₂O₃ and β-Ga₂O₃ lateral MESFET transistors Si离子注入对α-Ga₂O₃和β-Ga₂O₃横向MESFET晶体管的影响

Journal of Alloys and Compounds

IF6.3

2026-09-17

OAAI

Aniol Vellvehí; Pierre Gallarday; Edgars Butanovs; Vincent Sallet; José Rebollo; Josep Montserrat; Edvards Strods; Martins Zubkins; Lauris Dimitrocenko; Corine Sartel; Ekaterine Chikoidze; Xavier Perpiña; Miquel Vellvehi; Amador Pérez-Tomás

Breakdown voltage capability of vertical 4H-SiC power devices

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2024-08-01

OAAI

Godignon, Philippe; Biscarrat, Jerome; Tranchesset, Miya; Lavieville, Romain; Tournier, Dominique; Brosselard, Pierre; Montserrat, Josep

The role of chemical species in the passivation of <100> silicon surfaces by HF in water-ethanol solutions

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2019-12-07

PREAI

Garrido, B; Montserrat, J; Morante, JR

Etch-stop behavior of buried layers formed by substoichiometric nitrogen ion implantation into silicon

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2019-12-06

PREAI

PerezRodriguez, A; RomanoRodriguez, A; Morante, JR; Acero, MC; Esteve, J; Montserrat, J; ElHassani, A

Comparative study of boron doped gate oxide impact on 4H and 6H-SiC n-MOSFETs

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2019-04-01

PREAI

Cabello, Maria; Soler, Victor; Knoll, Lars; Montserrat, Josep; Rebollo, Jose; Mihaila, Andrei; Godignon, Philippe

Advanced processing for mobility improvement in 4H-SiC MOSFETs: A review

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2018-05-01

PREAI

Cabello, Maria; Soler, Victor; Rius, Gemma; Montserrat, Josep; Rebollo, Jose; Godignon, Philippe

Oxygen termination of homoepitaxial diamond surface by ozone and chemical methods: An experimental and theoretical perspective

APPLIED SURFACE SCIENCE

IF6.9

2018-03-01

PREAI

Navas, Javier; Araujo, Daniel; Carlos Piner, Jose; Sanchez-Coronilla, Antonio; Blanco, Eduardo; Villar, Pilar; Alcantara, Rodrigo; Montserrat, Josep; Florentin, Matthieu; Eon, David; Pernot, Julien

High-Voltage 4H-SiC Power MOSFETs With Boron-Doped Gate Oxide

IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS

IF7.2

2017-11-01

OAAI

Soler, Victor; Cabello, Maria; Berthou, Maxime; Montserrat, Josep; Rebollo, Jose; Godignon, Philippe; Mihaila, Andrei; Rogina, Maria R.; Rodriguez, Alberto; Sebastian, Javier

Impact of boron diffusion on oxynitrided gate oxides in 4H-SiC metal-oxide-semiconductor field-effect transistors

APPLIED PHYSICS LETTERS

IF3.6

2017-07-25

PREAI

Cabello, M.; Soler, V.; Montserrat, J.; Rebollo, J.; Rafi, J. M.; Godignon, P.

Hot electron engineering for boosting electroluminescence efficiencies of silicon-rich nitride light emitting devices 用于提高富硅氮化物发光器件的电致发光效率的热电子工程

JOURNAL OF LUMINESCENCE

IF3.6

2017-03-01

PREAI

Berencen, Y.; Mundet, B.; Rodriguez, J. A.; Montserrat, J.; Dominguez, C.; Garrido, B.

SiC Integrated Circuit Control Electronics for High-Temperature Operation

IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS

IF7.2

2015-05-01

PREAI

Alexandru, Mihaela; Banu, Viorel; Jorda, Xavier; Montserrat, Josep; Vellvehi, Miquel; Tournier, Dominique; Millan, Jose; Godignon, Philippe

Influence of the irradiation temperature on the surface structure and physical/chemical properties of Ar ion-irradiated bulk metallic glasses

JOURNAL OF ALLOYS AND COMPOUNDS

IF6.3

2014-10-01

PREAI

Menendez, E.; Hynowska, A.; Fornell, J.; Surinach, S.; Montserrat, J.; Temst, K.; Vantomme, A.; Baro, M. D.; Garcia-Lecina, E.; Pellicer, E.; Sort, J.

Thermomechanical Assessment of Die-Attach Materials for Wide Bandgap Semiconductor Devices and Harsh Environment Applications

IEEE TRANSACTIONS ON POWER ELECTRONICS

IF6.5

2014-05-01

PREAI

Navarro, Luis A.; Perpina, Xavier; Godignon, Philippe; Montserrat, Josep; Banu, Viorel; Vellvehi, Miquel; Jorda, Xavier

Structural analysis of SiC Schottky diodes failure mechanism under current overload

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2013-12-31

PREAI

Leon, J.; Berthou, M.; Perpina, X.; Banu, V.; Montserrat, J.; Vellvehi, M.; Godignon, P.; Jorda, X.