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J

J.M. Nel

university of pretoria

20H指数
88论文数
1.1K被引数
收录论文 21
发表时间
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Influence of of ammonia concentration on the microstructure, electrical and raman properties of low temperature chemical bath deposited ZnO nanorods
err2017-11-01
err19
errOAAI
errMwankemwa, Benard S.; Nambala, Fred J.; Kyeyune, Farooq; Hlatshwayo, Thulani T.; Nel, Jackie M.; Diale, Mmantsae
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Structural, morphological, optical and electrical properties of Schottky diodes based on CBD deposited ZnO:Cu nanorods
err2017-07-01
err19
errOAAI
errMwankemwa, Benard S.; Legodi, Matshisa J.; Mlambo, Mbuso; Nel, Jackie M.; Diale, Mmantsae
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Effect of thermal treatment on the characteristics of iridium Schottky barrier diodes on n-Ge (100)
err2012-02-01
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errOAAI
errChawanda, A.; Coelho, S. M. M.; Auret, F. D.; Mtangi, W.; Nyamhere, C.; Nel, J. M.; Diale, M.
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Thermal annealing behaviour of Pd Schottky contacts on melt-grown single crystal ZnO studied by IV and CV measurements
err2012-02-01
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errOAAI
errMtangi, W.; Auret, F. D.; Chawanda, A.; van Rensburg, P. J. Janse; Coelho, S. M. M.; Nel, J. M.; Diale, M.; van Schalkwyk, L.; Nyamhere, C.
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Determination of the laterally homogeneous barrier height of palladium Schottky barrier diodes on n-Ge (111)
err2010-12-01
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errOAAI
errChawanda, A.; Roro, K. T.; Auret, F. D.; Mtangi, W.; Nyamhere, C.; Nel, J.; Leach, L.
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Electrical characterization of defects introduced in n-type Ge during indium implantation
err2006-10-13
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PREAI
errAuret, F. D.; van Rensburg, P. J. Janse; Hayes, M.; Nel, J. M.; Meyer, W. E.; Decoster, S.; Matias, V.; Vantomme, A.
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Electrical characterization of growth-induced defects in bulk-grown ZnO
err2006-01-01
err46
PREAI
errAuret, FD; Nel, JM; Hayes, M; Wu, L; Wesch, W; Wendler, E
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Fabrication and characterisation of NiO/ZnO structures
err2004-06-01
err66
PREAI
errNel, JM; Auret, FD; Wu, L; Legodi, MJ; Meyer, WE; Hayes, M
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