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J
J.M. Nel
university of pretoria
20
H指数
88
论文数
1.1K
被引数
0
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21
发表时间
发表时间
IF
被引数
Insecticide Monitoring in Cattle Dip with an E-Nose System and Room Temperature Screen-Printed ZnO Gas Sensors
AGRICULTURE-BASEL
IF
3.6
2023-07-26
2
OA
AI
Rohde, Archibald W.; Nel, Jacqueline M.; Joubert, Trudi-Heleen
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Deep-level transient spectroscopy of GaN grown by electrochemical deposition and irradiated with alpha particles
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF
4.6
2021-06-01
3
PRE
AI
Ali, Abdulraoof I. A.; Danga, Helga T.; Nel, Jacqueline M.; Meyer, Walter E.
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Influence (Ce and Sm) co-doping ZnO nanorods on the structural, optical and electrical properties of the fabricated Schottky diode using chemical bath deposition
JOURNAL OF ALLOYS AND COMPOUNDS
IF
6.3
2019-11-01
28
OA
AI
Ahmed, Mustafa A.; Coetsee, Liza; Meyer, Walter E.; Nel, Jackie M.
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Effect of (Ce, Al) co-doped ZnO thin films on the Schottky diode properties fabricated using the sol-gel spin coating
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF
4.6
2019-11-01
30
OA
AI
Ahmed, M. A. M.; Meyer, W. E.; Nel, J. M.
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The effect of alpha particle irradiation on electrical properties and defects of ZnO thin films prepared by sol-gel spin coating
Α粒子辐照对溶胶-凝胶旋涂法制备ZnO薄膜电学性能和缺陷的影响
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF
4.6
2019-10-01
11
OA
AI
Ahmed, M. E., I; Taghizadeh, F.; Auret, F. D.; Meyer, W. E.; Nel, J. M.
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Structural, optical and electrical properties of the fabricated Schottky diodes based on ZnO, Ce and Sm doped ZnO films prepared via wet chemical technique
MATERIALS RESEARCH BULLETIN
IF
5.7
2019-07-01
30
OA
AI
Ahmed, M. A. M.; Meyer, W. E.; Nel, J. M.
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Structural, optical and electrical properties of a Schottky diode fabricated on Ce doped ZnO nanorods grown using a two step chemical bath deposition
使用两步化学浴沉积在Ce掺杂的ZnO纳米棒上制备的肖特基二极管的结构,光学和电学性质
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF
4.6
2018-11-01
19
OA
AI
Ahmed, M. A. M.; Meyer, W. E.; Nel, J. M.
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Electrical characterization of defects introduced during sputter deposition of tungsten on n type 4H-SiC
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF
4.6
2018-07-01
4
OA
AI
Tunhuma, Shandirai M.; Auret, F. D.; Legodi, M. J.; Nel, J.; Diale, M.
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Effect of Sm doping ZnO nanorods on structural optical and electrical properties of Schottky diodes prepared by chemical bath deposition
Sm掺杂ZnO纳米棒对化学浴沉积制备肖特基二极管结构光电性能的影响
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF
4.6
2018-06-01
54
OA
AI
Ahmed, M. A. M.; Mwankemwa, B. S.; Carleschi, E.; Doyle, B. P.; Meyer, W. E.; Nel, J. M.
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Influence of of ammonia concentration on the microstructure, electrical and raman properties of low temperature chemical bath deposited ZnO nanorods
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF
4.6
2017-11-01
19
OA
AI
Mwankemwa, Benard S.; Nambala, Fred J.; Kyeyune, Farooq; Hlatshwayo, Thulani T.; Nel, Jackie M.; Diale, Mmantsae
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Structural, morphological, optical and electrical properties of Schottky diodes based on CBD deposited ZnO:Cu nanorods
SUPERLATTICES AND MICROSTRUCTURES
IF
3.3
2017-07-01
19
OA
AI
Mwankemwa, Benard S.; Legodi, Matshisa J.; Mlambo, Mbuso; Nel, Jackie M.; Diale, Mmantsae
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Effect of thermal treatment on the characteristics of iridium Schottky barrier diodes on n-Ge (100)
JOURNAL OF ALLOYS AND COMPOUNDS
IF
6.3
2012-02-01
14
OA
AI
Chawanda, A.; Coelho, S. M. M.; Auret, F. D.; Mtangi, W.; Nyamhere, C.; Nel, J. M.; Diale, M.
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Thermal annealing behaviour of Pd Schottky contacts on melt-grown single crystal ZnO studied by IV and CV measurements
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS
IF
4.6
2012-02-01
9
OA
AI
Mtangi, W.; Auret, F. D.; Chawanda, A.; van Rensburg, P. J. Janse; Coelho, S. M. M.; Nel, J. M.; Diale, M.; van Schalkwyk, L.; Nyamhere, C.
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Determination of the laterally homogeneous barrier height of palladium Schottky barrier diodes on n-Ge (111)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF
4.6
2010-12-01
12
OA
AI
Chawanda, A.; Roro, K. T.; Auret, F. D.; Mtangi, W.; Nyamhere, C.; Nel, J.; Leach, L.
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Analysis of current-voltage measurements on Au/Ni/n-GaN Schottky contacts in a wide temperature range
宽温度范围内Au/Ni/n-gan肖特基接触的电流-电压测量分析
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS
IF
4.6
2010-07-01
26
OA
AI
Mtangi, W.; van Rensburg, P. J. Janse; Diale, M.; Auret, F. D.; Nyamhere, C.; Nel, J. M.; Chawanda, A.
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Thermal annealing behaviour of platinum, nickel and titanium Schottky barrier diodes on n-Ge (100)
N-ge (100) 上铂,镍和钛肖特基势垒二极管的热退火行为
JOURNAL OF ALLOYS AND COMPOUNDS
IF
6.3
2010-03-01
30
PRE
AI
Chawanda, A.; Nyamhere, C.; Auret, F. D.; Mtangi, W.; Diale, M.; Nel, J. M.
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Electrical characterization of defects introduced in n-type Ge during indium implantation
APPLIED PHYSICS LETTERS
IF
3.6
2006-10-13
16
PRE
AI
Auret, F. D.; van Rensburg, P. J. Janse; Hayes, M.; Nel, J. M.; Meyer, W. E.; Decoster, S.; Matias, V.; Vantomme, A.
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Electrical characterization of defects introduced during electron beam deposition of Schottky contacts on n-type Ge
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF
4.6
2006-08-01
10
PRE
AI
Auret, F. D.; Meyer, W. E.; Coelho, S.; Hayes, M.; Nel, J. M.
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Electrical characterization of growth-induced defects in bulk-grown ZnO
SUPERLATTICES AND MICROSTRUCTURES
IF
3.3
2006-01-01
46
PRE
AI
Auret, FD; Nel, JM; Hayes, M; Wu, L; Wesch, W; Wendler, E
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Fabrication and characterisation of NiO/ZnO structures
SENSORS AND ACTUATORS B-CHEMICAL
IF
7.7
2004-06-01
66
PRE
AI
Nel, JM; Auret, FD; Wu, L; Legodi, MJ; Meyer, WE; Hayes, M
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研究方向
暂时未获取到该数据
合作学者
合作期刊
A
A. Vantomme
H 指数: 46 · 论文数: 595
W
W. Wesch
H 指数: 37 · 论文数: 290
E
E. Wendler
H 指数: 36 · 论文数: 295
F
F.D. Auret
H 指数: 33 · 论文数: 374
W
W.E. Meyer
H 指数: 26 · 论文数: 213
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