Observations of very fast electron traps at SiC/high-κ dielectric interfacesAPL MATERIALSIF4.52023-11-210OA
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Statistical assessment and modeling of the effects of weather conditions on H2S plume dispersal from Icelandic geothermal power plantsGEOTHERMICSIF3.92013-01-0120PREAI
Thermal emission of electrons from selected s-shell configurations in InAs/GaAs quantum dotsAPPLIED PHYSICS LETTERSIF3.62003-10-2746PREAI
Observation of interface defects in thermally oxidized SiC using positron annihilationAPPLIED PHYSICS LETTERSIF3.62003-03-3128PREAI
Comment on Reliable extraction of the energy distribution of Si/SiO2 interface traps in ultrathin metal-oxide-semiconductor structures [Appl. Phys. Lett 80, 3952 (2002)]APPLIED PHYSICS LETTERSIF3.62002-11-041OAAI
Border traps in 6H-SiC metal-oxide-semiconductor capacitors investigated by the thermally-stimulated current techniqueAPPLIED PHYSICS LETTERSIF3.62001-12-1021PREAI
High-energy He-ion irradiation-induced defects and their influence on the noise behavior of Pd/n-Si1-xGex Schottky junctionsAPPLIED PHYSICS LETTERSIF3.62000-06-195PREAI
Hydrogen-atom number in platinum-hydrogen complexes in siliconPHYSICAL REVIEW BIF3.71999-07-1554PREAI
Electrical properties of platinum-hydrogen complexes in siliconPHYSICAL REVIEW BIF3.71997-06-1581PREAI
New interpretation of the dominant recombination center in platinum doped siliconAPPLIED PHYSICS LETTERSIF3.61997-03-2419PREAI
Room temperature electroluminescence from dislocation-rich siliconAPPLIED PHYSICS LETTERSIF3.61996-10-28109PREAI
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