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Luis A. Marqués

Universidad de Valladolid

21H指数
130论文数
1.8K被引数
收录论文 26
发表时间
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Atomistic study of dislocation formation during Ge epitaxy on SiGe外延在Si上生长过程中位错形成的原子层次研究
errApplied Surface Science
IF6.9
err2025-09-12
err0
errOAAI
errLuis Martín-Encinar; Luis A. Marqués; Iván Santos; Lourdes Pelaz
err分享
err收藏
Microscopic origin of the acceptor removal in neutron-irradiated Si detectors-An atomistic simulation study
errACTA MATERIALIA
IF9.3
err2022-12-01
err1
errOAAI
errLopez, P.; Aboy, M.; Santos, I; Marques, L. A.; Ullan, M.; Pelaz, L.
err分享
err收藏
Diagnosis of biofilm infections: current methods used, challenges and perspectives for the future
errJOURNAL OF APPLIED MICROBIOLOGY
IF3.2
err2021-03-08
err48
PREAI
errSilva, N. B. S.; Marques, L. A.; Roder, D. D. B.
err分享
err收藏
{001) loops in silicon unraveled
errACTA MATERIALIA
IF9.3
err2019-03-01
err3
errOAAI
errMarques, Luis A.; Aboy, Maria; Ruiz, Manuel; Santos, Ivan; Lopez, Pedro; Pelaz, Lourdes
err分享
err收藏
Generation of amorphous Si structurally compatible with experimental samples through the quenching process: A systematic molecular dynamics simulation study
errJOURNAL OF NON-CRYSTALLINE SOLIDS
IF3.5
err2019-01-01
err6
errOAAI
errSantos, Ivan; Aboy, Maria; Marques, Luis A.; Lopez, Pedro; Pelaz, Lourdes
err分享
err收藏
Improved physical models for advanced silicon device processing
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2017-05-01
err6
errOAAI
errPelaz, Lourdes; Marques, Luis A.; Aboy, Maria; Lopez, Pedro; Santos, Ivan
err分享
err收藏
Molecular dynamics simulation of the early stages of self-interstitial clustering in silicon
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2016-02-01
err7
errOAAI
errMarques, Luis A.; Aboy, Maria; Ruiz, Manuel; Santos, Ivan; Lopez, Pedro; Pelaz, Lourdes
err分享
err收藏
Insights on the atomistic origin of X and W photoluminescence lines in c-Si from ab initio simulations从头计算对c-si中X和W光致发光线的原子起源的见解
errJOURNAL OF PHYSICS D-APPLIED PHYSICS
IF3.2
err2016-01-14
err14
errOAAI
errSantos, Ivan; Aboy, Maria; Lopez, Pedro; Marques, Luis A.; Pelaz, Lourdes
err分享
err收藏
The curious case of thin-body Ge crystallization
errAPPLIED PHYSICS LETTERS
IF3.6
err2011-09-29
err21
errOAAI
errDuffy, R.; Shayesteh, M.; McCarthy, B.; Blake, A.; White, M.; Scully, J.; Yu, R.; Kelleher, A. -M.; Schmidt, M.; Petkov, N.; Pelaz, L.; Marques, L. A.
err分享
err收藏
Elucidating the atomistic mechanisms driving self-diffusion of amorphous Si during annealing
errPHYSICAL REVIEW B
IF3.7
err2011-04-14
err18
errOAAI
errSantos, Ivan; Marques, Luis A.; Pelaz, Lourdes; Colombo, Luciano
err分享
err收藏
Self-trapping in B-doped amorphous Si: Intrinsic origin of low acceptor efficiency
errPHYSICAL REVIEW B
IF3.7
err2010-01-19
err12
errOAAI
errSantos, I.; Castrillo, P.; Windl, W.; Drabold, D. A.; Pelaz, L.; Marques, L. A.
err分享
err收藏
Structural transformations from point to extended defects in silicon: A molecular dynamics study
errPHYSICAL REVIEW B
IF3.7
err2008-11-11
err14
PREAI
errMarques, Luis A.; Pelaz, Lourdes; Santos, Ivan; Lopez, Pedro; Aboy, Maria
err分享
err收藏
Recrystallization of atomically balanced amorphous pockets in Si:: A source of point defects
errPHYSICAL REVIEW B
IF3.7
err2007-10-24
err22
PREAI
errMarques, Luis A.; Pelaz, Lourdes; Lopez, Pedro; Santos, Ivan; Aboy, Maria
err分享
err收藏
Characterization of octadecaborane implantation into Si using molecular dynamics
errPHYSICAL REVIEW B
IF3.7
err2006-11-22
err27
PREAI
errMarques, Luis A.; Pelaz, Lourdes; Santos, Ivan; Venezia, V. C.
err分享
err收藏
Modeling of damage generation mechanisms in silicon at energies below the displacement threshold
errPHYSICAL REVIEW B
IF3.7
err2006-11-21
err38
PREAI
errSantos, Ivan; Marques, Luis A.; Pelaz, Lourdes
err分享
err收藏
Physical insight into boron activation and redistribution during annealing after low-temperature solid phase epitaxial regrowth
errAPPLIED PHYSICS LETTERS
IF3.6
err2006-05-11
err22
PREAI
errAboy, Maria; Pelaz, Lourdes; Lopez, Pedro; Marques, Luis A.; Duffy, R.; Venezia, V. C.
err分享
err收藏
A novel technique for the structural and energetic characterization of lattice defects in the molecular dynamics framework
errCOMPUTATIONAL MATERIALS SCIENCE
IF3.3
err2005-04-01
err2
PREAI
errMarqués, LA; Pelaz, L; Aboy, M; López, P; Barbolla, J
err分享
err收藏
Atomistic modeling of dopant implantation and annealing in Si:: damage evolution, dopant diffusion and activation
errCOMPUTATIONAL MATERIALS SCIENCE
IF3.3
err2005-04-01
err24
PREAI
errPelaz, L; Marqués, LA; Aboy, M; López, P; Barbolla, J
err分享
err收藏
Molecular dynamics study of the configurational and energetic properties of the silicon self-interstitial -: art. no. 085204
errPHYSICAL REVIEW B
IF3.7
err2005-02-17
err56
PREAI
errMarqués, LA; Pelaz, L; Castrillo, P; Barbolla, J
err分享
err收藏
Role of silicon interstitials in boron cluster dissolution -: art. no. 031908
errAPPLIED PHYSICS LETTERS
IF3.6
err2005-01-11
err17
errOAAI
errAboy, M; Pelaz, L; Marqués, LA; López, P; Barbolla, J; Duffy, R; Venezia, VC; Griffin, PB
err分享
err收藏

研究方向

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合作学者
合作期刊
G
George H. Gilmer
H 指数: 63 · 论文数: 258
J
J.D. Plummer
H 指数: 55 · 论文数: 366
D
D. A. Drabold
H 指数: 52 · 论文数: 384
Y
Yuzuru Takamura
H 指数: 49 · 论文数: 289
L
Luciano Colombo
H 指数: 46 · 论文数: 435
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