Tetsu Kachi - Publications, H-index & Citations

Tetsu Kachi

nagoya university

39H指数

320论文数

5.7K被引数

收录论文 34

发表时间

GaN-on-Si HEMTs for Low-Voltage FR2 Applications Enabled by Reactive-Sputtered n⁺⁺-GaN Ohmic Contacts Si基GaN高电子迁移率晶体管通过反应溅射n⁺⁺-GaN欧姆接触实现低电压FR2应用

IEEE Electron Device Letters

IF4.5

2026-03-30

PREAI

Yihao Zhuang; Siyu Liu; Qingyun Xie; Hanlin Xie; Tomita Kazuyoshi; Tetsu Kachi; Hiroshi Amano; Subramaniam Arulkumaran; Geok Ing Ng

Rapid Mg substitution to Ga-sites and slow defect recovery revealed by depth-resolved photoluminescence in Mg/N-ion-implanted GaN

APPLIED PHYSICS LETTERS

IF3.6

2024-11-05

PREAI

Kataoka, Keita; Narita, Tetsuo; Tomita, Kazuyoshi; Yamada, Shinji; Kachi, Tetsu

Mapping of ultra-high-pressure annealed n-GaN Schottky contacts using scanning internal photoemission microscopy

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2023-08-01

PREAI

Imabayashi, Hiroki; Shiojima, Kenji; Kachi, Tetsu

Mg-implanted vertical GaN junction barrier Schottky rectifiers with low on resistance, low turn-on voltage, and nearly ideal nondestructive breakdown voltage

APPLIED PHYSICS LETTERS

IF3.6

2022-11-15

PREAI

Matys, Maciej; Kitagawa, Kazuki; Narita, Tetsuo; Uesugi, Tsutomu; Suda, Jun; Kachi, Tetsu

Insight into interface electrical properties of metal-oxide-semiconductor structures fabricated on Mg-implanted GaN activated by ultra-high-pressure annealing

APPLIED PHYSICS LETTERS

IF3.6

2022-02-23

PREAI

Wada, Yuhei; Mizobata, Hidetoshi; Nozaki, Mikito; Kobayashi, Takuma; Hosoi, Takuji; Kachi, Tetsu; Shimura, Takayoshi; Watanabe, Heiji

Formation of highly vertical trenches with rounded corners via inductively coupled plasma reactive ion etching for vertical GaN power devices

APPLIED PHYSICS LETTERS

IF3.6

2021-03-09

PREAI

Yamada, Shinji; Sakurai, Hideki; Osada, Yamato; Furuta, Kanji; Nakamura, Toshiyuki; Kamimura, Ryuichiro; Narita, Tetsuo; Suda, Jun; Kachi, Tetsu

Mg-implanted bevel edge termination structure for GaN power device applications

APPLIED PHYSICS LETTERS

IF3.6

2021-03-03

PREAI

Matys, Maciej; Ishida, Takashi; Nam, Kyung Pil; Sakurai, Hideki; Narita, Tetsuo; Uesugi, Tsutomu; Bockowski, Michal; Suda, Jun; Kachi, Tetsu

Nitrogen-displacement-related electron traps in n-type GaN grown on a GaN freestanding substrate

APPLIED PHYSICS LETTERS

IF3.6

2021-01-05

PREAI

Horita, Masahiro; Narita, Tetsuo; Kachi, Tetsu; Suda, Jun

Effects of ultra-high-pressure annealing on characteristics of vacancies in Mg-implanted GaN studied using a monoenergetic positron beam

SCIENTIFIC REPORTS

IF3.9

2020-10-15

OAAI

Uedono, Akira; Sakurai, Hideki; Narita, Tetsuo; Sierakowski, Kacper; Bockowski, Michal; Suda, Jun; Ishibashi, Shoji; Chichibu, Shigefusa F.; Kachi, Tetsu

Absence of Oxygen-Vacancy-Related Deep Levels in the Amorphous Mixed Oxide (Al2O3)1-x(SiO2)x: First-Principles Exploration of Gate Oxides in GaN-Based Power Devices

PHYSICAL REVIEW APPLIED

IF4.4

2020-07-13

PREAI

Chokawa, Kenta; Narita, Tetsuo; Kikuta, Daigo; Shiozaki, Koji; Kachi, Tetsu; Oshiyama, Atsushi; Shiraishi, Kenji

Dislocation etch pits in GaN epitaxial layers grown on sapphire substrates

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2019-12-07

PREAI

Kozawa, T; Kachi, T; Ohwaki, T; Taga, Y; Koide, N; Koike, M

Measurement of avalanche multiplication utilizing Franz-Keldysh effect in GaN p-n junction diodes with double-side-depleted shallow bevel termination

APPLIED PHYSICS LETTERS

IF3.6

2019-09-30

PREAI

Maeda, Takuya; Narita, Tetsuo; Ueda, Hiroyuki; Kanechika, Masakazu; Uesugi, Tsutomu; Kachi, Tetsu; Kimoto, Tsunenobu; Horita, Masahiro; Suda, Jun

Highly effective activation of Mg-implanted p-type GaN by ultra-high-pressure annealing

APPLIED PHYSICS LETTERS

IF3.6

2019-09-30

134

PREAI

Sakurai, Hideki; Omori, Masato; Yamada, Shinji; Furukawa, Yukihiro; Suzuki, Hideo; Narita, Tetsuo; Kataoka, Keita; Horita, Masahiro; Bockowski, Michal; Suda, Jun; Kachi, Tetsu

Fully Ion Implanted Normally-Off GaN DMOSFETs with ALD-Al2O3 Gate Dielectrics 具有ALD-Al2O3栅极电介质的完全离子注入的常关型GaN dmosfet

MATERIALS

IF3.2

2019-02-26

OAAI

Yoshino, Michitaka; Ando, Yuto; Deki, Manato; Toyabe, Toru; Kuriyama, Kazuo; Honda, Yoshio; Nishimura, Tomoaki; Amano, Hiroshi; Kachi, Tetsu; Nakamura, Tohru

Franz-Keldysh effect in GaN p-n junction diode under high reverse bias voltage

APPLIED PHYSICS LETTERS

IF3.6

2018-06-21

PREAI

Maeda, Takuya; Narita, Tetsuo; Kanechika, Masakazu; Uesugi, Tsutomu; Kachi, Tetsu; Kimoto, Tsunenobu; Horita, Masahiro; Suda, Jun

Leakage mechanisms in GaN-on-GaN vertical pn diodes

APPLIED PHYSICS LETTERS

IF3.6

2018-06-04

OAAI

Rackauskas, B.; Dalcanale, S.; Uren, M. J.; Kachi, T.; Kuball, M.