Tomoyoshi Mishima - Publications, H-index & Citations

Tomoyoshi Mishima

hosei university

33H指数

288论文数

3.9K被引数

收录论文 14

发表时间

Comparison of electronic stopping cross sections for channeled implantation of Al ions between the ⟨0001⟩ and ⟨11 2 3⟩ directions in 4H-SiC (vol 63, 018003 , 2024)4H-SiC中沿⟨0001⟩和⟨11 2 3⟩方向沟道注入Al离子的电子阻止截面比较（卷63，018003，2024）

Japanese Journal of Applied Physics

IF1.8

2025-12-01

PREAI

Mochizuki, Kazuhiro; Nishimura, Tomoaki; Mishima, Tomoyoshi

6 kV GaN p-n diode fabricated by hybrid epitaxial growth with regrowth interface treated by CF4 plasma

APPLIED PHYSICS LETTERS

IF3.6

2025-01-02

PREAI

Ohta, Hiroshi; Narita, Yoshinobu; Kaneki, Shota; Kitamura, Toshio; Horikiri, Fumimasa; Fujikura, Hajime; Takatani, Shinichiro; Mishima, Tomoyoshi

Mapping of ion-implanted n-SiC schottky contacts using scanning internal photoemission microscopy

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2017-11-01

PREAI

Murase, Shingo; Mishima, Tomoyoshi; Nakamura, Tohru; Shiojima, Kenji

Power-generation performance of lead-free (K,Na)NbO3 piezoelectric thin-film energy harvesters

SENSORS AND ACTUATORS A-PHYSICAL

IF4.9

2012-06-01

119

PREAI

Kanno, Isaku; Ichida, Tomoharu; Adachi, Kazuhiko; Kotera, Hidetoshi; Shibata, Kenji; Mishima, Tomoyoshi

Development of GaN Growth Reaction Model Using Ab Initio Molecular Orbital Calculation and Computational Fluid Dynamics of Metalorganic Vapor-Phase Epitaxy

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2012-01-01

PREAI

Tokoi, Hirooki; Ohtake, Atsushi; Tago, Kazutami; Watanabe, Kazutoshi; Mishima, Tomoyoshi

Piezoelectric properties of microfabricated (K,Na)NbO3 thin films

SENSORS AND ACTUATORS A-PHYSICAL

IF4.9

2011-11-01

OAAI

Wakasa, Yu; Kanno, Isaku; Yokokawa, Ryuji; Kotera, Hidetoshi; Shibata, Kenji; Mishima, Tomoyoshi

Low turn-on voltage GaAs heterojunction bipolar transistors with a pseudomorphic GaAsSb base

APPLIED PHYSICS LETTERS

IF3.6

2001-01-22

PREAI

Oka, T; Mishima, T; Kudo, M

GaN/W/W-oxide metal base transistor with very large current gain and power gain

APPLIED PHYSICS LETTERS

IF3.6

2000-07-31

PREAI

Mochizuki, K; Uesugi, K; Asbeck, PM; Gotoh, J; Mishima, T; Hirata, K; Oda, H

Spiral growth of InGaN/InGaN quantum wells due to Si doping in the barrier layers (vol 74, pg 1153, 1999)

APPLIED PHYSICS LETTERS

IF3.6

1999-05-24

OAAI

Uchida, K; Yang, T; Goto, S; Mishima, T; Niwa, A; Gotoh, J

Spiral growth of InGaN/InGaN quantum wells due to Si doping in the barrier layers

APPLIED PHYSICS LETTERS

IF3.6

1999-02-22

PREAI

Uchida, K; Tang, T; Goto, S; Mishima, T; Niwa, A; Gotoh, J

Probing nonparabolic conduction subbands in nanoscale InGaAs/InAlAs quantum wells with cyclotron resonance in very high magnetic fields

SUPERLATTICES AND MICROSTRUCTURES

IF3.3

1998-10-01

PREAI

Kotera, N; Shimamoto, Y; Arimoto, H; Miura, N; Tanaka, K; Mishima, T

Resonant tunneling electron beam source using GaAs/AlAs/GaAs field emitter

APPLIED SURFACE SCIENCE

IF6.9

1997-02-01

PREAI

Ohshima, T; Mishima, T; Okamoto, M; Kuroda, K

Monolithically-integrated optoelectronic circuit for ultrafast sampling of a dual-gate field-effect transistor

OPTICAL AND QUANTUM ELECTRONICS

IF4

1996-07-01

PREAI

Allam, J; Baynes, ND; Cleaver, JRA; Ogawa, K; Mishima, T; Ohbu, I

Ultrafast characterization of in-plane-gate field-effect transistors: Parasitics in laterally gated transistors

OPTICAL AND QUANTUM ELECTRONICS

IF4

1996-07-01

PREAI

Ogawa, K; Allam, J; Baynes, ND; Cleaver, JRA; Mishima, T; Ohbu, I

研究方向