P.M. Asbeck - Publications, H-index & Citations

P.M. Asbeck

University of California System

74H指数

606论文数

1.9W被引数

收录论文 32

发表时间

Design and Validation of Miniaturized Repetitive Transcranial Magnetic Stimulation (rTMS) Head Coils

SENSORS

IF3.5

2024-02-29

OAAI

Abbasi, Shaghayegh; Alluri, Sravya; Leung, Vincent; Asbeck, Peter; Makale, Milan T.

An Efficient Circuit for Pulsed Magnetic Neural Stimulation

IEEE JOURNAL OF ELECTROMAGNETICS RF AND MICROWAVES IN MEDICINE AND BIOLOGY

IF3.2

2023-09-01

PREAI

Asbeck, Peter M.; Alluri, Sravya; Leung, Vincent; Abbasi, Shaghayegh; Makale, Milan T.

Integrated Circuits for Wireless Communications: Research Activities at the University of California, San Diego: Circuits Research for Wireless Communications at the University of California, San Diego

IEEE MICROWAVE MAGAZINE

IF2.6

2023-05-01

PREAI

Asbeck, Peter; Bharadia, Dinesh; Galton, Ian; Hall, Drew; Le, Hanh-Phuc; Mercier, Patrick; Rebeiz, Gabriel

Coil Size and Current Pulse Optimization through Multi-Scale Modeling for Repetitive Transcranial Magnetic Stimulation (rTMS)通过重复经颅磁刺激 (rTMS) 的多尺度建模优化线圈尺寸和电流脉冲

2023 11TH INTERNATIONAL IEEE/EMBS CONFERENCE ON NEURAL ENGINEERING, NER

IF0

2023-04-24

PREAI

Abbasi, Shaghayegh; Joray, Benjamin; Rudnicki, Kenneth; Leung, Vincent; Asbeck, Peter; Makale, Milan

Neural recording and stimulation using wireless networks of microimplants 使用微植入物的无线网络进行神经记录和刺激

NATURE ELECTRONICS

IF40.9

2021-08-12

101

PREAI

Lee, Jihun; Leung, Vincent; Lee, Ah-Hyoung; Huang, Jiannan; Asbeck, Peter; Mercier, Patrick P.; Shellhammer, Stephen; Larson, Lawrence; Laiwalla, Farah; Nurmikko, Arto

Millimeter-Wave Power Amplifier Integrated Circuits for High Dynamic Range Signals 用于高动态范围信号的毫米波功率放大器集成电路

IEEE JOURNAL OF MICROWAVES

IF4.9

2021-01-01

OAAI

Wang, Hua; Asbeck, Peter M.; Fager, Christian

Intrinsically Linear Transistor for Millimeter-Wave Low Noise Amplifiers

NANO LETTERS

IF9.1

2020-03-23

PREAI

Choi, Woojin; Chen, Renjie; Levy, Cooper; Tanaka, Atsunori; Liu, Ren; Balasubramanian, Venkatesh; Asbeck, Peter M.; Dayeh, Shadi A.

A GaN PA for 4G LTE-Advanced and 5G

IEEE MICROWAVE MAGAZINE

IF2.6

2017-11-01

PREAI

Ma, Rui; Teo, Koon Hoo; Shinjo, Shintaro; Yamanaka, Koji; Asbeck, Peter M.

ET Comes of Age

IEEE MICROWAVE MAGAZINE

IF2.6

2016-03-01

136

PREAI

Asbeck, Peter; Popovic, Zoya

Characterization of interface and border traps in ALD Al2O3/GaN MOS capacitors with two-step surface pretreatments on Ga-polar GaN

APPLIED SURFACE SCIENCE

IF6.9

2014-10-01

PREAI

Gu, S.; Chagarov, E. A.; Min, J.; Madisetti, S.; Novak, S.; Oktyabrsky, S.; Kerr, A. J.; Kaufman-Osborn, T.; Kummel, A. C.; Asbeck, P. M.

Preparation of gallium nitride surfaces for atomic layer deposition of aluminum oxide

JOURNAL OF CHEMICAL PHYSICS

IF3.1

2014-09-10

OAAI

Kerr, A. J.; Chagarov, E.; Gu, S.; Kaufman-Osborn, T.; Madisetti, S.; Wu, J.; Asbeck, P. M.; Oktyabrsky, S.; Kummel, A. C.

A μW Complementary Bridge Rectifier With Near Zero Turn-on Voltage in SOS CMOS for Wireless Power Supplies

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS

IF5.2

2012-09-01

PREAI

Theilmann, Paul T.; Presti, Calogero D.; Kelly, Dylan J.; Asbeck, Peter M.

Ultra-low resistance ohmic contacts in graphene field effect transistors

APPLIED PHYSICS LETTERS

IF3.6

2012-05-18

142

PREAI

Moon, J. S.; Antcliffe, M.; Seo, H. C.; Curtis, D.; Lin, S.; Schmitz, A.; Milosavljevic, I.; Kiselev, A. A.; Ross, R. S.; Gaskill, D. K.; Campbell, P. M.; Fitch, R. C.; Lee, K. -M.; Asbeck, P.

Border traps in Al2O3/In0.53Ga0.47As (100) gate stacks and their passivation by hydrogen anneals

APPLIED PHYSICS LETTERS

IF3.6

2010-01-06

207

PREAI

Kim, Eun Ji; Wang, Lingquan; Asbeck, Peter M.; Saraswat, Krishna C.; McIntyre, Paul C.

Enhanced dielectric constants and shielding effectiveness of, uniformly dispersed, functionalized carbon nanotube composites

APPLIED PHYSICS LETTERS

IF3.6

2009-06-18

OAAI

Park, Sung Hoon; Thielemann, Paul; Asbeck, Peter; Bandaru, Prabhakar R.

De-embedding parasitic components from propagation constant calculations

AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS

IF3.2

2009-04-01

PREAI

Farcich, Nick J.; Asbeck, Peter M.

An Analytical Model for Inductively Coupled Implantable Biomedical Devices With Ferrite Rods

ieee transactions on circuits and systems i regular papers

IF4.9

2009-02-01

PREAI

Theilmann, Paul T.; Asbeck, Peter M.

Graded-base InGaN/GaN heterojunction bipolar light-emitting transistors

APPLIED PHYSICS LETTERS

IF3.6

2006-08-25

PREAI

Chu-Kung, B. F.; Feng, M.; Walter, G.; Holonyak, N., Jr.; Chung, T.; Ryou, J. -H.; Limb, J.; Yoo, D.; Shen, S. -C.; Dupuis, R. D.; Keogh, D.; Asbeck, P. M.

Device operation of InGaN heterojunction bipolar transistors with a graded emitter-base design

APPLIED PHYSICS LETTERS

IF3.6

2006-05-01

PREAI

Chung, T; Limb, J; Yoo, D; Ryou, JH; Lee, W; Shen, SC; Dupuis, RD; Chu-Kung, B; Feng, M; Keogh, DM; Asbeck, PM

Heterojunction bipolar transistors implemented with GaInNAs materials

SEMICONDUCTOR SCIENCE AND TECHNOLOGY

IF2.1

2002-07-17

PREAI

Asbeck, PM; Welty, RJ; Tu, CW; Xin, HP; Welser, RE

研究方向