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Gaoming Du

Hefei University of Technology

21H指数
176论文数
2.0K被引数
收录论文 37
发表时间
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An Efficient Ring Polynomial Multiplication Accelerator for Homomorphic Encryption
err2024-01-01
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PREAI
errRen, Jingwei; Du, Gaoming; Li, Zhenmin; Jia, Xianhu; Liao, Qiuzhu; Wang, Xiaolei; Zhang, Duoli
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Hotspots Reduction for GALS NoC Using a Low-Latency Multistage Packet Reordering Approach
err2023-02-14
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errOAAI
errLi, Zhenmin; Shen, Ruimin; Yi, Maoxiang; Song, Yukun; Wang, Xiaolei; Du, Gaoming; Huang, Zhengfeng
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A BNN Accelerator Based on Edge-skip-calculation Strategy and Consolidation Compressed Tree基于边跳过计算策略和合并压缩树的BNN加速器
err2022-05-10
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PREAI
errDu, Gaoming; Chen, Bangyi; Li, Zhenmin; Tu, Zhenxing; Zhou, Junjie; Wang, Shenya; Zhao, Qinghao; Yin, Yongsheng; Wang, Xiaolei
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The influence of thermal annealing process after GaN cap layer growth on structural and optical properties of InGaN/InGaN multi-quantum wells
err2018-12-01
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PREAI
errLiu, S. T.; Yang, J.; Zhao, D. G.; Jiang, D. S.; Liang, F.; Chen, P.; Zhu, J. J.; Liu, Z. S.; Liu, W.; Xing, Y.; Peng, L. Y.; Zhang, L. Q.; Wang, W. J.; Li, M.; Zhang, Y. T.; Du, G. T.
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Mg concentration profile and its control in the low temperature grown Mg-doped GaN epilayer
err2018-01-01
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PREAI
errLiu, S. T.; Yang, J.; Zhao, D. G.; Jiang, D. S.; Liang, F.; Chen, P.; Zhu, J. J.; Liu, Z. S.; Liu, W.; Xing, Y.; Zhang, L. Q.; Wang, W. J.; Li, M.; Zhang, Y. T.; Du, G. T.
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Emission efficiency enhanced by introduction of the homogeneous localization states in InGaN/GaN multiple quantum well LEDs
err2016-10-01
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PREAI
errYang, J.; Zhao, D. G.; Jiang, D. S.; Chen, P.; Zhu, J. J.; Liu, Z. S.; Liu, J. P.; Zhang, L. Q.; Yang, H.; Zhang, Y. T.; Du, G. T.
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Influence of InGaN growth rate on the localization states and optical properties of InGaN/GaN multiple quantum wells
err2016-09-01
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PREAI
errLi, X.; Zhao, D. G.; Yang, J.; Jiang, D. S.; Liu, Z. S.; Chen, P.; Zhu, J. J.; Liu, W.; He, X. G.; Li, X. J.; Liang, F.; Zhang, L. Q.; Liu, J. P.; Yang, H.; Zhang, Y. T.; Du, G. T.
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Emission efficiency enhanced by reducing the concentration of residual carbon impurities in InGaN/GaN multiple quantum well light emitting diodes
err2016-06-13
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errOAAI
errYang, J.; Zhao, D. G.; Jiang, D. S.; Chen, P.; Liu, Z. S.; Zhu, J. J.; Li, X. J.; He, X. G.; Liu, J. P.; Zhang, L. Q.; Yang, H.; Zhang, Y. T.; Du, G. T.
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The difference in efficiency droop behaviors of two InGaN/GaN multiple-quantum-well green light-emitting diodes with modified structural parameters
err2015-12-01
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PREAI
errLiu, W.; Zhao, D. G.; Jiang, D. S.; Chen, P.; Liu, Z. S.; Zhu, J. J.; Li, X.; Liang, F.; Liu, J. P.; Zhang, S. M.; Yang, H.; Zhang, Y. T.; Du, G. T.
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Temperature dependence of photoluminescence spectra for green light emission from InGaN/GaN multiple wells
err2015-06-09
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errOAAI
errLiu, W.; Zhao, D. G.; Jiang, D. S.; Chen, P.; Liu, Z. S.; Zhu, J. J.; Shi, M.; Zhao, D. M.; Li, X.; Liu, J. P.; Zhang, S. M.; Wang, H.; Yang, H.; Zhang, Y. T.; Du, G. T.
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