Steven A. Ringel - Publications, H-index & Citations

Steven A. Ringel

University System of Ohio

51H指数

313论文数

7.5K被引数

收录论文 70

发表时间

Investigation of the surface treatment of GaAsSb/Si using current- and capacitance-voltage measurements 使用电流-电压和电容-电压测量研究GaAsSb/Si的表面处理

Journal of Applied Physics

IF2.5

2026-05-07

PREAI

Xia, Yongkang; Muduli, Manisha; Lee, Seunghyun; Gajowski, Nathan; Mills, Sophie; Nallamothu, Naga Swetha; Saud Nikor, Sk Shafaat; Adams, Rachel L.; Reano, Ronald M.; Ringel, Steven A.; Krishna, Sanjay; Arafin, Shamsul

Spectroscopy of point defects in semiconductors 半导体中点缺陷的光谱学

MRS Bulletin

IF4.9

2026-05-07

PREAI

Matthew D. McCluskey; Michael A. Reshchikov; Hemant Ghadi; Joe F. McGlone; Steven A. Ringel; Patrick M. Lenahan; Kai-Mei C. Fu; Filip Tuomisto

Dual-Sacrificial-Layer Wet Etching for Transfer Printing of InP-Based Antimony-Containing Materials 双牺牲层湿法刻蚀技术在InP基锑化物材料转印中的应用

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY

IF2.2

2025-10-01

PREAI

Xia, Yongkang; Nikor, Sk Shafaat Saud; Gajowski, Nathan; Lee, Seunghyun; Muduli, Manisha; Noh, Siyun; Nallamothu, Naga Swetha; Adams, Rachel L.; Reano, Ronald M.; Ringel, Steven A.; Krishna, Sanjay; Arafin, Shamsul

Deep level defects in MOCVD-grown β-(AlxGa1-x)2O3 MOCVD生长的β-(AlxGa1-x)2O3中的深能级缺陷

JOURNAL OF APPLIED PHYSICS

IF2.5

2025-09-07

OAAI

Shuai, Quentin H.; Ghadi, Hemant; Cornuelle, Evan; McGlone, Joe F.; Anhar Uddin Bhuiyan, A. F. M.; Zhao, Hongping; Arehart, Aaron; Ringel, Steven A.

Comprehensive characterization of nitrogen-related defect states in β-Ga2O3 using quantitative optical and thermal defect spectroscopy methods

APL MATERIALS

IF4.5

2024-09-11

OAAI

Ghadi, Hemant; Cornuellue, Evan; Mcglone, Joe F.; Senckowski, Alexander; Sharma, Shivam; Wong, Man Hoi; Singisetti, Uttam; Ringel, Steven A.

Identification and characterization of deep nitrogen acceptors in β-Ga2O3 using defect spectroscopies

APL MATERIALS

IF4.5

2023-11-07

OAAI

Ghadi, Hemant; Mcglone, Joe F.; Cornuelle, Evan; Senckowski, Alexander; Sharma, Shivam; Wong, Man Hoi; Singisetti, Uttam; Frodason, Ymir Kalmann; Peelaers, Hartwin; Lyons, John L.; Varley, Joel B.; van de Walle, Chris G.; Arehart, Aaron; Ringel, Steven A.

Trap characterization of high-growth-rate laser-assisted MOCVD GaN

APPLIED PHYSICS LETTERS

IF3.6

2023-09-11

OAAI

Li, Wenbo; Zhang, Yuxuan; Chen, Zhaoying; Zhao, Hongping; Ringel, Steven A.; Arehart, Aaron R.

Plasma-assisted deposition and characterization of Al2O3 dielectric layers on (001) β-Ga2O3

APPLIED PHYSICS LETTERS

IF3.6

2023-08-22

OAAI

Dhara, Sushovan; Dheenan, Ashok; Kalarickal, Nidhin Kurian; Huang, Hsien-Lien; Islam, Ahmad Ehteshamul; Joishi, Chandan; Fiedler, Andreas; McGlone, Joe F.; Ringel, Steven A.; Hwang, Jinwoo; Rajan, Siddharth

Demonstration of self-aligned β-Ga2O3 δ-doped MOSFETs with current density >550 mA/mm

APPLIED PHYSICS LETTERS

IF3.6

2023-03-15

OAAI

Kalarickal, Nidhin Kurian; Dheenan, Ashok; McGlone, Joe. F. F.; Dhara, Sushovan; Brenner, Mark; Ringel, Steven. A. A.; Rajan, Siddharth

Deep level defects in low-pressure chemical vapor deposition grown (010) β-Ga2O3

APL MATERIALS

IF4.5

2022-10-27

OAAI

Ghadi, Hemant; McGlone, Joe F.; Cornuelle, Evan; Feng, Zixuan; Zhang, Yuxuan; Meng, Lingyu; Zhao, Hongping; Arehart, Aaron R.; Ringel, Steven A.

β-Ga2O3 MESFETs with insulating Mg-doped buffer grown by plasma-assisted molecular beam epitaxy

APPLIED PHYSICS LETTERS

IF3.6

2022-09-12

OAAI

Dheenan, Ashok, V; McGlone, Joe F.; Kalarickal, Nidhin Kurian; Huang, Hsien-Lien; Brenner, Mark; Hwang, Jinwoo; Ringel, Steven A.; Rajan, Siddharth

β-Gallium oxide power electronics Β-氧化镓电力电子

APL MATERIALS

IF4.5

2022-02-07

322

OAAI

Green, Andrew J.; Speck, James; Xing, Grace; Moens, Peter; Allerstam, Fredrik; Gumaelius, Krister; Neyer, Thomas; Arias-Purdue, Andrea; Mehrotra, Vivek; Kuramata, Akito; Sasaki, Kohei; Watanabe, Shinya; Koshi, Kimiyoshi; Blevins, John; Bierwagen, Oliver; Krishnamoorthy, Sriram; Leedy, Kevin; Arehart, Aaron R.; Neal, Adam T.; Mou, Shin; Ringel, Steven A.; Kumar, Avinash; Sharma, Ankit; Ghosh, Krishnendu; Singisetti, Uttam; Li, Wenshen; Chabak, Kelson; Liddy, Kyle; Islam, Ahmad; Rajan, Siddharth; Graham, Samuel; Choi, Sukwon; Cheng, Zhe; Higashiwaki, Masataka

23.4% monolithic epitaxial GaAsP/Si tandem solar cells and quantification of losses from threading dislocations

SOLAR ENERGY MATERIALS AND SOLAR CELLS

IF6.3

2021-09-01

OAAI

Lepkowski, Daniel L.; Grassman, Tyler J.; Boyer, Jacob T.; Chmielewski, Daniel J.; Yi, Chuqi; Juhl, Mattias K.; Soeriyadi, Anastasia H.; Western, Ned; Mehrvarz, Hamid; Romer, Udo; Ho-Baillie, Anita; Kerestes, Christopher; Derkacs, Daniel; Whipple, Steven G.; Stavrides, Alex P.; Bremner, Stephen P.; Ringel, Steven A.

Influence of growth temperature on defect states throughout the bandgap of MOCVD-grown β-Ga2O3

APPLIED PHYSICS LETTERS

IF3.6

2020-10-29

OAAI

Ghadi, Hemant; McGlone, Joe F.; Feng, Zixuan; Bhuiyan, A. F. M. Anhar Uddin; Zhao, Hongping; Arehart, Aaron R.; Ringel, Steven A.

Full bandgap defect state characterization of β-Ga2O3 grown by metal organic chemical vapor deposition

APL MATERIALS

IF4.5

2020-02-13

OAAI

Ghadi, Hemant; McGlone, Joe F.; Jackson, Christine M.; Farzana, Esmat; Feng, Zixuan; Bhuiyan, A. F. M. Anhar Uddin; Zhao, Hongping; Arehart, Aaron R.; Ringel, Steven A.

Influence of neutron irradiation on deep levels in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy

APL MATERIALS

IF4.5

2019-12-06

OAAI

Farzana, Esmat; Mauze, Akhil; Varley, Joel B.; Blue, Thomas E.; Speck, James S.; Arehart, Aaron R.; Ringel, Steven A.

Unusual Formation of Point-Defect Complexes in the Ultrawide-Band-Gap Semiconductor β-Ga2O3

PHYSICAL REVIEW X

IF15.7

2019-11-06

111

OAAI

Johnson, Jared M.; Chen, Zhen; Varley, Joel B.; Jackson, Christine M.; Farzana, Esmat; Zhang, Zeng; Arehart, Aaron R.; Huang, Hsien-Lien; Genc, Arda; Ringel, Steven A.; Van de Walle, Chris G.; Muller, David A.; Hwang, Jinwoo

Mechanism of Si doping in plasma assisted MBE growth of β-Ga2O3

APPLIED PHYSICS LETTERS

IF3.6

2019-10-10

PREAI

Kalarickal, Nidhin Kurian; Xia, Zhanbo; McGlone, Joe; Krishnamoorthy, Sriram; Moore, Wyatt; Brenner, Mark; Arehart, Aaron R.; Ringel, Steven A.; Rajan, Siddharth

Identification of critical buffer traps in Si δ-doped β-Ga2O3 MESFETs

APPLIED PHYSICS LETTERS

IF3.6

2019-10-09

OAAI

McGlone, Joe F.; Xia, Zhanbo; Joishi, Chandan; Lodha, Saurabh; Rajan, Siddharth; Ringel, Steven; Arehart, Aaron R.

Velocity saturation in La-doped BaSnO3 thin films

APPLIED PHYSICS LETTERS

IF3.6

2019-08-26

OAAI

Chandrasekar, Hareesh; Cheng, Junao; Wang, Tianshi; Xia, Zhanbo; Combs, Nicholas G.; Freeze, Christopher R.; Marshall, Patrick B.; McGlone, Joe; Arehart, Aaron; Ringel, Steven; Janotti, Anderson; Stemmer, Susanne; Lu, Wu; Rajan, Siddharth

研究方向