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P

Paul L. Voss

centre national de la recherche scientifique (cnrs)

H指数:30

被引数:3,603

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Layer transferred UV emitting hBN/AlGaN heterostructures

APPLIED PHYSICS LETTERS

IF3.6

2025-03-010

PRE

Nano-Structured InGaN Photoanode for Hydrogen Production Using Photoelectrochemical Water Splitting: A Simulation Study

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2025-02-120

OA

High-Quality Hexagonal Boron Nitride Selectively Grown on Patterned Epigraphene by MOVPE

CRYSTAL GROWTH & DESIGN

IF3.4

2024-11-230

OA

Novel 2D/3D Heterojunction for UV Light-Emitting Diodes Using Hexagonal Boron Nitride as Hole Injection Layer

advanced photonics

IF3.9

2024-10-171

OAAI

Hydrogen Confinement in Hexagonal Boron Nitride Bubbles Using UV Laser Illumination

IF12.1

2024-10-140

OAAI

Reduction of self-heating effects in GaN HEMT via h-BN passivation and lift-off transfer to diamond substrate: A simulation study

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS

IF4.6

2024-03-014

OAAI

Scaling up of Growth, Fabrication, and Device Transfer Process for GaN-based LEDs on H-BN Templates to 6-inch Sapphire Substrates

ADVANCED MATERIALS TECHNOLOGIES

IF6.2

2023-07-203

PRE

Photoinduced doping in hexagonal boron nitride

APPLIED PHYSICS LETTERS

IF3.6

2023-06-266

OA

Multiple Shapes Micro-LEDs with Defect Free Sidewalls and Simple Liftoff and Transfer Using Selective Area Growth on Hexagonal Boron Nitride Template

ADVANCED MATERIALS TECHNOLOGIES

IF6.2

2023-04-148

OA

Recent advances in InGaN nanowires for hydrogen production using photoelectrochemical water splitting

InGaN纳米线用于光电化学水分解制氢的最新进展

MATERIALS TODAY ENERGY

IF8.6

2023-04-0114

PRE

Biosensors for the Rapid Detection of Cardiovascular Biomarkers of Vital Interest: Needs, Analysis and Perspectives

JOURNAL OF PERSONALIZED MEDICINE

IF3

2022-11-2212

OAAI

Relevant Biomarkers in Medical Practices: An Analysis of the Needs Addressed by an International Survey

JOURNAL OF PERSONALIZED MEDICINE

IF3

2022-01-141

OAAI

Natural Boron and 10B-Enriched Hexagonal Boron Nitride for High-Sensitivity Self-Biased Metal-Semiconductor-Metal Neutron Detectors

IF4.3

2021-12-2813

OAAI

Monolithic Free-Standing Large-Area Vertical III-N Light-Emitting Diode Arrays by One-Step h-BN-Based Thermomechanical Self-Lift-Off and Transfer

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2021-06-0812

OAAI

MOVPE of GaN-based mixed dimensional heterostructures on wafer-scale layered 2D hexagonal boron nitride-A key enabler of III-nitride flexible optoelectronics

IF4.5

2021-06-0114

OAAI

Towards P-Type Conduction in Hexagonal Boron Nitride: Doping Study and Electrical Measurements Analysis of hBN/AlGaN Heterojunctions

六方氮化硼的P型传导: hBN/AlGaN异质结的掺杂研究和电学测量分析

IF4.3

2021-01-1520

OAAI

Effectiveness of selective area growth using van der Waals h-BN layer for crack-free transfer of large-size III-N devices onto arbitrary substrates

SCIENTIFIC REPORTS

IF3.9

2020-12-1014

OAAI

Control of the Mechanical Adhesion of III-V Materials Grown on Layered h-BN

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2020-11-2518

OAAI

Single crystalline boron rich B(Al)N alloys grown by MOVPE

MOVPE生长的单晶富硼B(Al)N合金

APPLIED PHYSICS LETTERS

IF3.6

2020-01-2818

OA

Nanopyramid-based absorber to boost the efficiency of InGaN solar cells

IF6.6

2019-09-0110

OAAI