未登录Oxygen vacancy engineering in Si-doped, HfO2 ferroelectric capacitors using Ti oxygen scavenging layers
Barrett, N.; Hamouda, W.; Lubin, C.; Laguerre, J.; Carabasse, C.; Vaxelaire, N.; Coignus, J.; Martin, S.; Grenouillet, L. .png)
分享.png)
收藏Roadmap on ferroelectric hafnia- and zirconia-based materials and devices铁电氧化铪和氧化锆基材料和器件路线图Silva, Jose P. B.; Alcala, Ruben; Avci, Uygar E.; Barrett, Nick; Begon-Lours, Laura; Borg, Mattias; Byun, Seungyong; Chang, Sou-Chi; Cheong, Sang-Wook; Choe, Duk-Hyun; Coignus, Jean; Deshpande, Veeresh; Dimoulas, Athanasios; Dubourdieu, Catherine; Fina, Ignasi; Funakubo, Hiroshi; Grenouillet, Laurent; Gruverman, Alexei; Heo, Jinseong; Hoffmann, Michael; Hsain, H. Alex; Huang, Fei-Ting; Hwang, Cheol Seong; Iniguez, Jorge; Jones, Jacob L.; Karpov, Ilya V.; Kersch, Alfred; Kwon, Taegyu; Lancaster, Suzanne; Lederer, Maximilian; Lee, Younghwan; Lomenzo, Patrick D.; Martin, Lane W.; Martin, Simon; Migita, Shinji; Mikolajick, Thomas; Noheda, Beatriz; Park, Min Hyuk; Rabe, Karin M.; Salahuddin, Sayeef; Sanchez, Florencio; Seidel, Konrad; Shimizu, Takao; Shiraishi, Takahisa; Slesazeck, Stefan; Toriumi, Akira; Uchida, Hiroshi; Vilquin, Bertrand; Xu, Xianghan; Ye, Kun Hee; Schroeder, Uwe 分享 收藏 Impact of area scaling on the ferroelectric properties of back-end of line compatible Hf0.5Zr0.5O2 and Si:HfO2-based MFM capacitorsFrancois, T.; Grenouillet, L.; Coignus, J.; Vaxelaire, N.; Carabasse, C.; Aussenac, F.; Chevalliez, S.; Slesazeck, S.; Richter, C.; Chiquet, P.; Bocquet, M.; Schroeder, U.; Mikolajick, T.; Gaillard, F.; Nowak, E. 分享 收藏 分享 收藏 分享 收藏 分享 收藏 
.png){kind=icon}
.png){kind=icon}
.png){kind=icon}
.png){kind=icon}
