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H

Hongliang Lü

xidian university

12H指数
115论文数
525被引数
收录论文 24
发表时间
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A Switchable Adaptive Bias Network for Power Amplifiers Based on GaAs HBT Technology基于GaAs HBT技术的可切换自适应偏置网络用于功率放大器
errIEEE Transactions on Microwave Theory and Techniques
IF4.5
err2026-08-07
err0
PREAI
errLongxiang He; Silu Yan; Hongliang Lu; Yanghui Hu; Lin Cheng; Shaowei Wang; Yuming Zhang
err分享
err收藏
The Study on High Forward Current Stress Degradation Mechanism of InP HBT DevicesInP HBT器件大正向电流应力退化机理研究
errIEEE Transactions on Electron Devices
IF3.2
err2026-06-10
err0
PREAI
errYanghui Hu; Hongliang Lu; Silu Yan; Lin Cheng; Jiantao Qiao; Yuming Zhang
err分享
err收藏
Solid-Liquid Equilibrium in the Ternary Systems NaCl-Na2SeO3-H2O and Na2SO4-Na2SeO3-H2O at 268.15 and 288.15 KNaCl-Na₂SeO₃-H₂O和Na₂SO₄-Na₂SeO₃-H₂O三元体系在268.15 K和288.15 K下的固液平衡
errJournal of Chemical and Engineering Data
IF2.1
err2026-05-14
err0
PREAI
errZhao, Mengmeng; Zhang, Meiyan; Zheng, Wenyan; Lv, Hongliang; Shang, Zhi; Wang, Xueying; Huang, Xueli
err分享
err收藏
Demonstration of high on-state current performance in vertical InGaAs/GaAsSb heterojunction face tunnel FETs垂直InGaAs/GaAsSb异质结面隧穿FETs中高导通电流性能的演示
errJournal of Alloys and Compounds
IF6.3
err2026-02-16
err0
PREAI
errJiawei Li; Hongliang Lu; Yi Zhu; Silu Yan; Yuming Zhang
err分享
err收藏
Investigation and Modeling of Radiation-Enhanced Hot-Carrier Degradation in I/O-nFinFETs: Considering the Effect of Fin Number辐射增强的热载流子退化在I/O-nFinFETs中的调查与建模：考虑鳍片数量的影响
errIEEE Transactions on Nuclear Science
IF1.9
err2026-02-01
err0
PREAI
errYao, Ruxue; Zhang, Yuming; Lu, Hongliang; Zhang, Yutao; Li, Shun; Sun, Jing; Xun, Mingzhu; Yu, Gang
err分享
err收藏
Largest-Scale Genomic Resource Reconstructing the Genetic Origin, Population Structure, and Biological Adaptations of the Hui People最大规模的基因组资源，重建回族人群的遗传起源、群体结构和生物学适应性
errMOLECULAR BIOLOGY AND EVOLUTION
IF5.3
err2025-10-01
err2
errOAAI
errHe, Guanglin; Chen, Jing; Duan, Shuhan; Yang, Qingxin; Li, Bowen; Luo, Lintao; Zhong, Jie; Sun, Qiuxia; Bu, Fengxiao; Tang, Renkuan; Lu, Hongliang; Yuan, Haibing; Yuan, Huijun; Liu, Chao; Wang, Mengge
err分享
err收藏
Improving small signal modeling of GaN HEMTs with vector fitting method采用矢量拟合方法改进GaN HEMTs的小信号建模
errMICROELECTRONICS JOURNAL
IF2.3
err2025-10-01
err0
PREAI
errWang, Shaowei; Lu, Hongliang; Yan, Silu; Cheng, Lin; Hu, Yanghui; He, Longxiang; Wang, Liu; Zhang, Yuming
err分享
err收藏
Steric Hindrance and Film Quality in HfO2 Atomic Layer Deposition: Comparative Kinetic Monte Carlo Simulation of TEMA-Hf and HfCp(NMe2)3 Precursors位阻效应与HfO2原子层沉积薄膜质量：TEMA-Hf和HfCp(NMe2)3前驱体的比较动力学蒙特卡洛模拟
errCHEMISTRY OF MATERIALS
IF7
err2025-04-08
err0
PREAI
errLi, Haojie; Wen, Yanwei; Ge, Yiao; Ruan, Qiyuan; Lu, Hongliang; Tan, Wanliang; Yu, Fangzhou; Liu, Zhang; Cao, Kun; Shan, Bin; Xu, Jeffrey; Chen, Rong
err分享
err收藏
A Study on Dual-Gate Dielectric Face Tunnel Field-Effect Transistor for Ternary Inverter
errNANOMATERIALS
IF4.3
err2024-08-03
err0
errOAAI
errWang, Aoxuan; Lu, Hongliang; Zhang, Yuming; Sun, Jiale; Lv, Zhijun
err分享
err收藏
Efficient Modeling of Single Event Transient Effect with Limited Peak Current: Implications for Logic Circuits
errMICROMACHINES
IF3
err2024-07-05
err0
errOAAI
errWang, Yujian; Lu, Hongliang; Yang, Caozhen; Zhang, Yutao; Yao, Ruxue; Dong, Rui; Zhang, Yuming
err分享
err收藏
A Method for Automatically Predicting the Radiation-Induced Vulnerability of Unit Integrated Circuits
errMICROMACHINES
IF3
err2024-04-18
err1
errOAAI
errDong, Rui; Lu, Hongliang; Yang, Caozhen; Zhang, Yutao; Yao, Ruxue; Wang, Yujian; Zhang, Yuming
err分享
err收藏
Research on the Reliability of Threshold Voltage Based on GaN High-Electron-Mobility Transistors基于GaN高电子迁移率晶体管的阈值电压可靠性研究
errMICROMACHINES
IF3
err2024-02-25
err2
errOAAI
errDai, Pengfei; Wang, Shaowei; Lu, Hongliang
err分享
err收藏
Ultrathin Flexible Encapsulation Materials Based on Al2O3/Alucone Nanolaminates for Improved Electrical Stability of Silicon Nanomembrane-Based MOS Capacitors
errMICROMACHINES
IF3
err2023-12-24
err1
errOAAI
errWang, Zhuofan; Lu, Hongliang; Zhang, Yuming; Liu, Chen; Zhang, Haonan; Yu, Yanhao
err分享
err收藏
An Improved Model of Single-Event Transients Based on Effective Space Charge for Metal-Oxide-Semiconductor Field-Effect Transistor
errMICROMACHINES
IF3
err2023-11-11
err0
errOAAI
errZhang, Yutao; Lu, Hongliang; Liu, Chen; Zhang, Yuming; Yao, Ruxue; Liu, Xingming
err分享
err收藏
Characteristics and Degradation Mechanisms under High Reverse Base-Collector Bias Stress in InGaAs/InP Double HBTsInGaAs/InP双hbt在高反向基极-集电极偏置应力下的特性和退化机制
errMICROMACHINES
IF3
err2023-11-08
err0
errOAAI
errYan, Silu; Lu, Hongliang; Cheng, Lin; Qiao, Jiantao; Cheng, Wei; Zhang, Yuming
err分享
err收藏
An Aging Small-Signal Model for Degradation Prediction of Microwave Heterojunction Bipolar Transistor S-Parameters Based on Prior Knowledge Neural Network
errMICROMACHINES
IF3
err2023-10-30
err0
errOAAI
errCheng, Lin; Lu, Hongliang; Yan, Silu; Liu, Chen; Qiao, Jiantao; Qi, Junjun; Cheng, Wei; Zhang, Yimen; Zhang, Yuming
err分享
err收藏
Deep-learning quasi-particle masses from QCD equation of state
errPHYSICS LETTERS B
IF4.5
err2023-09-01
err7
errOAAI
errLi, Fu-Peng; Lu, Hong-Liang; Pang, Long-Gang; Qin, Guang-You
err分享
err收藏
Solving Schrodinger equations using a physically constrained neural network
errCHINESE PHYSICS C
IF3.1
err2023-05-01
err3
errOAAI
errPu, Kai-Fang; Li, Han-Lin; Lu, Hong-Liang; Pang, Long-Gang
err分享
err收藏
The impact of laser energy, bias and irradiation positions on single event transients of InP HBT
errJOURNAL OF PHYSICS D-APPLIED PHYSICS
IF3.2
err2020-01-28
err4
PREAI
errZhao, Xiao-Hong; Lu, Hong-Liang; Zhang, Yu-Ming; Zhang, Yi-Men; Wei, Zhi-Chao
err分享
err收藏
The Study of Deep Level Traps and Their Influence on Current Characteristics of InP/InGaAs Heterostructures
errNANOMATERIALS
IF4.3
err2019-08-09
err7
errOAAI
errZhao, Xiaohong; Lu, Hongliang; Zhao, Manli; Zhang, Yuming; Zhang, Yimen
err分享
err收藏

研究方向

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合作学者
合作期刊
Z
Zhenqiang Ma
H 指数: 63 · 论文数: 638
B
Bin Shan
H 指数: 59 · 论文数: 333
李
李顺 (Shun Li)
H 指数: 54 · 论文数: 510
陈
陈蓉 (Rong Chen)
H 指数: 47 · 论文数: 406
曹坤 封面图
曹坤 (Kun Cao)
H 指数: 44 · 论文数: 217
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