Tohru Tsuruoka

national institute for materials science

H指数:43

被引数:7,884

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Hardware-Oriented Visual Information Edge Detection, Based on Proton Migration-Driven Lateral Inhibition

基于质子迁移驱动的侧抑制的硬件导向型视觉信息边缘检测

Advanced Functional Materials

IF19

2025-12-150

Redox-Induced Atomic Switch as Platform for Molecular Electronics Devices

氧化还原诱导原子开关作为分子电子器件的平台

Small

IF12.1

2025-10-250

OAAI

Ionic nanoarchitectonics for electronic information devices

离子纳米构筑学在电子信息设备中的应用

Solid State Ionics

IF3.3

2025-08-260

OAAI

Bias Sweep-Induced Analog Memristor Behavior, Using a Cuprous Iodide Thin Film, for Neuromorphic Computing

利用碘化亚铜薄膜实现的偏压扫描诱导模拟忆阻器行为，用于类脑计算

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2025-05-150

PRE

Sub-Millisecond and Energy-Efficient Electrochemical Synaptic Transistors with a Partially Reduced Graphene Oxide Channel

亚毫秒级且能量高效的电化学突触晶体管，具有部分还原的氧化石墨烯通道

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2025-04-190

Deep-blue amplified spontaneous emission and lasing in colloidal silicon nanoclusters

CHEMICAL COMMUNICATIONS

IF4.2

2025-04-010

Effects of Plasma Reactants on Atomic Layer Deposition of Lithium Phosphate and Lithium Phosphorus Oxynitride Electrolyte Films

等离子体反应物对原子层沉积磷酸锂和锂磷氧氮化物电解质膜的影响

CHEMISTRY OF MATERIALS

IF7

2024-06-071

PRE

Solid polymer electrolyte-based atomic switches: from materials to mechanisms and applications

基于固体聚合物电解质的原子开关: 从材料到机理和应用

SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS

IF6.9

2024-05-161

OAAI

Effects of Mg Doping to a LiCoO2 Channel on the Synaptic Plasticity of Li Ion-Gated Transistors

Mg掺杂对LiCoO2通道对Li离子门控晶体管突触可塑性的影响

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2023-09-288

PRE

Proton-Gated Synaptic Transistors, Based on an Electron-Beam Patterned Nafion Electrolyte

基于电子束图案化的Nafion电解质的质子门控突触晶体管

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2023-04-068

PRE

Metal doped polyaniline as neuromorphic circuit elements for in-materia computing

金属掺杂的聚苯胺作为用于材料计算的神经形态电路元件

SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS

IF6.9

2023-02-273

OAAI

Nitrogen Plasma Enhanced Low Temperature Atomic Layer Deposition of Magnesium Phosphorus Oxynitride (MgPON) Solid-State Electrolytes

ANGEWANDTE CHEMIE-INTERNATIONAL EDITION

IF16.9

2023-01-242

Atomic scale switches based on solid state ionics

基于固态离子的原子级开关

advances in physics

IF10.8

2022-04-135

Quantized conductance behaviour observed in an atomic switch using triptycene-based polymers

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2022-01-013

PRE

Neuromorphic System for Edge Information Encoding: Emulating Retinal Center-Surround Antagonism by Li-Ion-Mediated Highly Interactive Devices

NANO LETTERS

IF9.1

2021-09-1317

PRE

Impact of moisture absorption on the resistive switching characteristics of a polyethylene oxide-based atomic switch

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2021-01-018

PRE

Effects of water adsorption on conductive filaments of a Ta2O5 atomic switch investigated by nondestructive electrical measurements

APPLIED PHYSICS LETTERS

IF3.6

2020-12-111

PREAI

A Voltage-Controlled Oscillator Using Variable Capacitors with a Thin Dielectric Electrolyte Film

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2020-09-028

PREAI

Fabrication of a magnesium-ion-conducting magnesium phosphate electrolyte film using atomic layer deposition

japanese journal of radiology

IF1.8

2020-03-116

PREAI

Significant roles of the polymer matrix in the resistive switching behavior of polymer-based atomic switches

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2019-08-1319

PREAI

Tohru Tsuruoka

个人简介

教育背景

工作经历

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