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Wan Sik Hwang

korea aerospace university

29H指数
160论文数
3.9K被引数
收录论文 69
发表时间
Ultrawide bandgap NiCo/β-Ga2O3 Schottky detectors for solar-blind UV response, low-dose X-ray detection, and X-ray imaging超宽禁带NiCo/β-Ga2O3肖特基探测器用于太阳盲区紫外响应、低剂量X射线探测和X射线成像
err2026-08-15
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PREAI
errPrasad, Chowdam Venkata; Kim, Sunjae; Park, Beomjun; Vo, Thanh Huong; Shin, Kanghee; Park, Seung-Hyun; Park, Jang Hyeok; Lee, Geon-Hee; Jeon, Ho Jung; Cheon, Yu Jun; Tse, Geoffrey; Jaiswal, Nilesh Kumar; Oh, Jong-Min; Hwang, Wan Sik; Koo, Sang-Mo; Rim, You Seung
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Formation of Ga2O3 and NiO Thin Films at Low Process Temperatures for PN Heterojunction Diodes
err2025-04-01
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PREAI
errRyou, Heejoong; Kim, Sunjae; Kim, Dongbin; Baek, Jongsu; Song, Yu-Jin; Kim, Jung Han; Cho, Byung Jin; Kim, Hyoung Woo; Hwang, Wan Sik
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Phase Evolution in La-Alloyed β-Ga2O3 Nanofibers: Experimental and DFT Simulation Insights
err2025-04-01
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errCha, Hyeongju; Jeon, Dong Won; Ryou, Heejoong; Kim, Sunjae; Cho, Sung Beom; Hwang, Wan Sik
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Implementing κ-Ga2O3 Polymorphs Using Ga Predeposition
err2025-02-24
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PREAI
errKim, Sunjae; Lee, Jae-Hyeong; Kim, Hyeong-Yun; Hwang, Wan Sik; Park, Ji-Hyeon; Jeon, Dae-Woo
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High-performance normally-off Si-doped β-Ga2O3 deep ultraviolet phototransistor grown on N-doped β-Ga2O3
err2025-01-01
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errKim, Sunjae; Kim, Hyeong-Yun; Kim, Yongki; Jeon, Dae-Woo; Hwang, Wan Sik; Park, Ji-Hyeon
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Improvement of electrical and optoelectronic properties of ZnO thin films by plasma nitridation treatment
err2024-09-01
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PREAI
errKim, Minje; Baek, Jongsu; Kim, Sunjae; Bae, Joonyup; Cho, Byung Jin; Kim, Jihyun; Hwang, Wan Sik
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Charge Neutral Point Shift of a 700 nm-Thick α-Ga2O3 Thin-Film Detector under Soft X-ray Irradiation
err2024-07-26
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PREAI
errVo, Thanh Huong; Kim, Sunjae; Kim, Minje; Cho, Hyeon Gu; Gihm, Se Hoon; Park, Ji-Hyeon; Jeon, Dae-Woo; Hwang, Wan Sik
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Impact of oxygen deficiency and shallow hole-traps on high-responsivity ZnO-based UV photodetectors
err2024-04-01
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PREAI
errKim, Minje; Beak, Jongsu; Kim, Sunjae; Hwang, Wan Sik; Cho, Byung Jin; Shin, Myunghun
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Sn-doped n-type amorphous gallium oxide semiconductor with energy bandgap of 4.9 eV
err2024-01-01
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PREAI
errSeo, Dahee; Baek, Jongsu; Kim, Sunjae; Cho, Byung Jin; Hwang, Wan Sik
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