Hideharu Matsuura - Publications, H-index & Citations

Hideharu Matsuura

Osaka Electro-Communication University

20H指数

157论文数

1.7K被引数

收录论文 7

发表时间

Physical picture of nearest-neighbor hopping conduction in heavily Al-doped p-type 4H-SiC 重Al掺杂p型4H-SiC中最近邻跳跃传导的物理图像

Japanese Journal of Applied Physics

IF1.8

2026-04-30

PREAI

Matsuura, Hideharu; Narita, Tomoya; Hidaka, Atsuki; Eto, Kazuma; Ji, Shiyang; Kojima, Kazutoshi; Kato, Tomohisa; Yoshida, Sadafumi

Low-temperature transition from band conduction to nearest-neighbor hopping conduction in heavily Al-doped 4H-SiC epilayers 重Al掺杂4H-SiC外延层中低温下从能带传导到最近邻跳跃传导的转变

Japanese Journal of Applied Physics

IF1.8

2026-04-17

PREAI

Matsuura, Hideharu; Narita, Tomoya; Iwatsuki, Mitsuhide; Hidaka, Atsuki; Eto, Kazuma; Ji, Shiyang; Kojima, Kazutoshi; Kato, Tomohisa

Gated Silicon Drift Detector Fabricated from a Low-Cost Silicon Wafer 由低成本硅晶片制成的门控硅漂移检测器

SENSORS

IF3.5

2015-05-22

OAAI

Matsuura, Hideharu; Sakurai, Shungo; Oda, Yuya; Fukushima, Shinya; Ishikawa, Shohei; Takeshita, Akinobu; Hidaka, Atsuki

Influence of excited states of a deep substitutional dopant on majority-carrier concentration in semiconductors

PHYSICAL REVIEW B

IF3.7

2006-12-26

PREAI

Matsuura, Hideharu

Decrease in Al acceptor density in Al-doped 4H-SiC by irradiation with 4.6 MeV electrons

APPLIED PHYSICS LETTERS

IF3.6

2003-12-15

PREAI

Matsuura, H; Aso, K; Kagamihara, S; Iwata, H; Ishida, T; Nishikawa, K

Temperature dependence of electron concentration in type-converted silicon by 1x1017 cm-2 fluence irradiation of 1 MeV electrons

APPLIED PHYSICS LETTERS

IF3.6

2000-04-10

PREAI

Matsuura, H; Uchida, Y; Nagai, N; Hisamatsu, T; Aburaya, T; Matsuda, S

Effects of corrugated insulator on electrical insulation in vacuum 波纹绝缘子对真空电绝缘性能的影响

VACUUM

IF3.9

1996-06-01

PREAI

Yamamoto, O; Hara, T; Matsuura, H; Tanabe, Y; Konishi, T

研究方向