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Xiaoming Huang

Nanjing University

H指数:12

被引数:527

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Enhancing the Carrier Mobility and Bias Stability in Metal-Oxide Thin Film Transistors with Bilayer InSnO/a-InGaZnO Heterojunction Structure

提高具有双层InSnO/a-InGaZnO异质结结构的金属氧化物薄膜晶体管中的载流子迁移率和偏置稳定性

IF3

2024-04-111

OAAI

Electrical Stability Modeling Based on Surface Potential for a-InGaZnO TFTs under Positive-Bias Stress and Light Illumination

IF3

2023-04-130

OAAI

Analysis of Nitrogen-Doping Effect on Sub-Gap Density of States in a-IGZO TFTs by TCAD Simulation

IF3

2022-04-1412

OAAI

A Novel Step-Doped Channel AlGaN/GaN HEMTs with Improved Breakdown Performance

具有改进击穿性能的新型阶梯掺杂AlGaN/GaN hemt

IF3

2021-10-144

OAAI

Analytical model for the potential and electric field distributions of AlGaN/GaN HEMTs with gate-connected FP based on Equivalent Potential Method

SUPERLATTICES AND MICROSTRUCTURES

IF3.3

2020-02-019

PREAI

Improving electrical stability of a-InGaZnO TFTs under monochromatic light illumination by nitrogen doping

SUPERLATTICES AND MICROSTRUCTURES

IF3.3

2019-06-015

PREAI

IGZO TFT-based circuit with tunable threshold voltage by laser annealing

SUPERLATTICES AND MICROSTRUCTURES

IF3.3

2017-11-012

PREAI

Electrically tunable terahertz metamaterials with embedded large-area transparent thin-film transistor arrays

SCIENTIFIC REPORTS

IF3.9

2016-03-2226

OAAI

Electrical Instability of Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors under Ultraviolet Illumination

CHINESE PHYSICS LETTERS

IF4.2

2016-03-117

PREAI

The Effect of Oxygen Partial Pressure during Active Layer Deposition on Bias Stability of a-InGaZnO TFTs

CHINESE PHYSICS LETTERS

IF4.2

2015-07-015

PREAI

Frequency Performance of Ring Oscillators Based on a-IGZO Thin-Film Transistors

CHINESE PHYSICS LETTERS

IF4.2

2015-04-0711

PREAI

Experimental observation of lateral emission in freestanding GaN-based membrane devices

IF3.3

2014-08-1511

PREAI

Enhanced bias stress stability of a-InGaZnO thin film transistors by inserting an ultra-thin interfacial InGaZnO:N layer

APPLIED PHYSICS LETTERS

IF3.6

2013-05-1357

PREAI

Electrical instability of amorphous indium-gallium-zinc oxide thin film transistors under monochromatic light illumination

APPLIED PHYSICS LETTERS

IF3.6

2012-06-1193

PREAI

Characteristics of charge density waves on the surfaces of quasi-one-dimensional charge-transfer complex layered organic crystals

PHYSICAL REVIEW B

IF3.7

2011-03-314

PREAI

Thermochemical hole burning on TEA(TCNQ)2 single crystal at varied temperatures in UHV system

JOURNAL OF PHYSICAL CHEMISTRY C

IF3.2

2008-01-194

PREAI

Modulation of the structure and electronic density of molecular chains on organic conductor surfaces

JOURNAL OF PHYSICAL CHEMISTRY C

IF3.2

2008-01-034

PREAI