Weizong Xu

hefei national laboratory

H指数:22

被引数:2,198

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Thick 4H-SiC based Schottky-Type Electron Detector for Fast Microscopy and Extended Sensitivity to sub-keV

基于4H-SiC的厚型肖特基型电子探测器，用于快速显微镜和扩展对sub-keV的灵敏度

IEEE Electron Device Letters

IF4.5

2026-09-180

PRE

540 V Fully Vertical GaN Bipolar Transistor With 99.5% Electron Transition Efficiency and 190 Current Gain by Base Engineering

540 V全垂直GaN双极晶体管，通过基区工程实现99.5%电子传输效率与190电流增益

IEEE Transactions on Electron Devices

IF3.2

2026-07-280

PRE

A Monolithic 4H-SiC Chip Integrating Charge Accumulation, Transfer, and Dissipation for Precise Transient Charge Tracking

单片4H-SiC芯片集成电荷积累、转移和耗散以实现精确的瞬态电荷跟踪

IEEE Electron Device Letters

IF4.5

2026-07-280

PRE

High-energy krypton-ion irradiation-induced stress and strain in AlGaN/GaN heterojunctions and latent tracks in devices

高能氪离子辐照诱导的AlGaN/GaN异质结中应力与应变及器件中的潜径迹

Semiconductor Science and Technology

IF2.1

2026-05-010

PRE

Reliability Performance Study of SiC, GaN, and Si Photodetectors Under High-Dose UV Irradiation

SiC、GaN和Si光电探测器在高剂量UV辐射下的可靠性性能研究

IEEE Photonics Technology Letters

IF2.5

2026-02-151

PRE

Highly Reliable SiC UV SPAD With Over 10000 h of Continuous Operation

IEEE ELECTRON DEVICE LETTERS

IF4.5

2025-12-010

PRE

150 °C Compatible 4H-SiC Junction Transistor for the Precise Analog Analysis on 0.1-pC-Level Charge Signals With 0.7% Standard Error

IEEE ELECTRON DEVICE LETTERS

IF4.5

2025-11-010

PRE

Iso-Potential Guard Ring Engineered 4H-SiC Soft X-Ray Photon Counting Detector With Room-Temperature Energy Spectroscopy Capability

等势防护环工程化4H-SiC软X射线光子计数探测器，具有室温能谱测量能力

IEEE Electron Device Letters

IF4.5

2025-10-010

PRE

4H-SiC-Based Low-Noise Front-End Charge Coupling Transistor for 0.9% Radiation Energy Resolution

4H-SiC基低噪声前端电荷耦合晶体管，用于实现0.9%的辐射能量分辨率

IEEE Transactions on Electron Devices

IF3.2

2025-07-010

PRE

Color centers and crystal structural transformations induced by femtosecond laser writing in 4H-SiC

飞秒激光写入诱导的4H-SiC中的色心与晶体结构转变

JOURNAL OF APPLIED PHYSICS

IF2.5

2025-03-240

PRE

4H-SiC-based soft X-ray single photon detector with linear photon energy response

线性光子能量响应的4H-SiC-based软x射线单光子探测器

optics letters

IF2.8

2025-03-010

PRE

Insight into gain and transient response characteristics of AlGaN/GaN hetero-junction based UV photodetectors: Case study on the role of incident light intensity

APPLIED PHYSICS LETTERS

IF3.6

2024-12-030

PRE

Self-powered MXene/GaN van der Waals Schottky ultraviolet photodetectors with exceptional responsivity and stability

APPLIED PHYSICS REVIEWS

IF11.6

2024-10-240

Improving AlGaN-based deep-ultraviolet light-emitting diodes: SiO2 passivation and size optimization for enhanced optoelectronic performance

APPLIED PHYSICS LETTERS

IF3.6

2024-04-171

PRE

Enhancing the Carrier Mobility and Bias Stability in Metal-Oxide Thin Film Transistors with Bilayer InSnO/a-InGaZnO Heterojunction Structure

提高具有双层InSnO/a-InGaZnO异质结结构的金属氧化物薄膜晶体管中的载流子迁移率和偏置稳定性

MICROMACHINES

IF3

2024-04-111

OAAI

Ultraviolet spot position measurement based on 4 H-SiC quadrant photodetectors

optics letters

IF2.8

2024-01-011

PRE

Investigation of highly reflective p-electrodes for AlGaN-based deep-ultraviolet light-emitting diodes

OPTICS EXPRESS

IF3.3

2023-11-075

Electrical Stability Modeling Based on Surface Potential for a-InGaZnO TFTs under Positive-Bias Stress and Light Illumination

MICROMACHINES

IF3

2023-04-130

OAAI

Dynamic reactions of defects in ion-implanted 4H-SiC upon high temperature annealing

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2023-04-110

PRE

High density polarization-induced 2D hole gas enabled by elevating Al composition in GaN/AlGaN heterostructures

APPLIED PHYSICS LETTERS

IF3.6

2023-04-036

PRE

Weizong Xu

个人简介

教育背景

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