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M

M. Myronov

University of Warwick

H指数:29

被引数:2,967

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Hole mobility in compressively strained germanium on silicon exceeds 7 × 106 cm2V-1s−1

硅上受压应变锗的空穴迁移率超过7 × 10^6 cm²V⁻¹s⁻¹

Materials Today

IF22

2025-10-080

OAAI

Impact of quantum well thickness on hole mobility in strained germanium heterostructures

APPLIED PHYSICS LETTERS

IF3.6

2025-03-010

PRE

High-Fidelity TiN Processing Modes for Multigate Ge-Based Quantum Devices

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2025-01-100

OA

In-situ strain control in epitaxial silicon carbide compound semiconductor

SCIENTIFIC REPORTS

IF3.9

2024-12-050

OAAI

Single step silicon carbide heteroepitaxy on a silicon wafer at reduced temperature

MATERIALS TODAY COMMUNICATIONS

IF4.5

2024-03-011

OAAI

Electric field-tuneable crossing of hole Zeeman splitting and orbital gaps in compressively strained germanium semiconductor on silicon

COMMUNICATIONS MATERIALS

IF9.6

2023-12-051

OA

Revealing Low Thermal Conductivity of Germanium Tin Semiconductor at Room Temperature

ADVANCED MATERIALS INTERFACES

IF4.4

2023-11-273

OA

Holes Outperform Electrons in Group IV Semiconductor Materials

IF8.3

2023-03-0220

OA

Strain mapping of silicon carbon suspended membranes

硅碳悬浮膜的应变映射

MATERIALS & DESIGN

IF7.9

2021-12-010

OAAI

Carrier Dynamics in Thin Germanium-Tin Epilayers

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2021-01-1113

OAAI

Continuous-Wave Magneto-Optical Determination of the Carrier Lifetime in Coherent Ge1-xSnx/Ge Heterostructures

PHYSICAL REVIEW APPLIED

IF4.4

2020-12-239

OAAI

The germanium quantum information route

NATURE REVIEWS MATERIALS

IF86.2

2020-12-21241

OAAI

Activated and Metallic Conduction in p-DType Modulation-Doped Ge-Sn Devices

PHYSICAL REVIEW APPLIED

IF4.4

2020-11-247

OAAI

Landau polaritons in highly nonparabolic two-dimensional gases in the ultrastrong coupling regime

在超强耦合状态下高度非抛物线二维气体中的Landau极化子

PHYSICAL REVIEW B

IF3.7

2020-02-0531

OAAI

Understanding the effect of p-, n-type dopants and vinyl carbonate electrolyte additive on electrochemical performance of Si thin film anodes for lithium-ion battery

了解p型，n型掺杂剂和碳酸乙烯酯电解质添加剂对锂离子电池Si薄膜负极电化学性能的影响

ELECTROCHIMICA ACTA

IF5.6

2020-01-0117

PREAI

Uprooting defects to enable high-performance III-V optoelectronic devices on silicon

NATURE COMMUNICATIONS

IF15.7

2019-09-2053

OAAI

Minority carrier lifetime in indium doped silicon for photovoltaics

PROGRESS IN PHOTOVOLTAICS

IF7.6

2019-08-0611

OAAI

Spin-coherent dynamics and carrier lifetime in strained Ge1-xSnx semiconductors on silicon

PHYSICAL REVIEW B

IF3.7

2019-01-1030

OAAI

Ballistic One-Dimensional Holes with Strong g-Factor Anisotropy in Germanium

IF9.1

2018-07-1126

OAAI

N-type doped amorphous Si thin film on a surface of rough current collector as anode for Li-ion batteries

粗糙集电器表面的N型掺杂非晶硅薄膜作为锂离子电池的阳极

MATERIALS TODAY-PROCEEDINGS

IF0

2018-01-014

PREAI