Daniel J. Pennachio - Publications, H-index & Citations

Daniel J. Pennachio

U.S. Naval Research Laboratory

13H指数

51论文数

1.3K被引数

收录论文 17

发表时间

Investigation of Freestanding Macroscopic SiO2/ZnO:Al Nanocomposites Grown by Atomic Layer Deposition and Environmentally Controlled Pressure-Assisted Sintering 通过原子层沉积和环境控制压力辅助烧结制备的独立式宏观SiO2/ZnO:Al纳米复合材料的表征

Microscopy and Microanalysis

IF3

2026-07-27

OAAI

Zoey Warecki; Kevin P Anderson; Benjamin L Greenberg; Todd H Brintlinger; Marc Currie; Joseph C Prestigiacomo; Daniel J Pennachio; Alan G Jacobs; Austin J Cendejas; Eric A Patterson; James A Wollmershauser; Boris N Feigelson

Epitaxial Cr2MnO4 p-n heterojunction to (201) β-Ga2O3 deposited via off-axis magnetron sputtering 外延Cr₂MnO₄ p-n异质结与通过偏轴磁控溅射沉积的(201) β-Ga₂O₃

JOURNAL OF APPLIED PHYSICS

IF2.5

2025-12-07

PREAI

Akintunde, Babajide; Derksen, Naomi; Imran, Ashik; Gallagher, James C.; Tadjer, Marko J.; Gutierrez, Audrey Rose; Hall, Merlin J.; Orent, Jared T.; Rimal, Gaurab; Kayani, Asghar N.; Pennachio, Daniel J.; Dey, Koushik; Wang, Xin; Gann, Katie R.; Hobart, Karl D.; Mastro, Michael A.; Hauser, Adam J.

Operation of AlGaN Channel HEMTs at 850 °C With ON/OFF Ratio >10⁴

IEEE Electron Device Letters

IF4.5

2025-11-25

PREAI

James Spencer Lundh; Brianna A. Klein; Andrew A. Allerman; Andrew J. Cantrell; Alfred Zhao; Daniel J. Pennachio; GlenAsia Gonzalez; Eric Cruz; Tolen M. Nelson; Geoffrey M. Foster; Alan G. Jacobs; Andrew D. Koehler; Marko J. Tadjer; Giovanni Esteves; Roy H. Olsson; Andrew M. Armstrong; Karl D. Hobart; Michael A. Mastro

Reduced temperature in lateral (AlxGa1-x)2O3/Ga2O3 heterojunction field effect transistor capped with nanocrystalline diamond

APPLIED PHYSICS LETTERS

IF3.6

2024-04-10

OAAI

Masten, Hannah N.; Lundh, James Spencer; Feygelson, Tatyana I.; Sasaki, Kohei; Cheng, Zhe; Spencer, Joseph A.; Liao, Pai-Ying; Hite, Jennifer K.; Pennachio, Daniel J.; Jacobs, Alan G.; Mastro, Michael A.; Feigelson, Boris N.; Kuramata, Akito; Ye, Peide; Graham, Samuel; Pate, Bradford B.; Hobart, Karl D.; Anderson, Travis J.; Tadjer, Marko J.

Green growth of mixed valence manganese oxides on quasi-freestanding bilayer epitaxial graphene-silicon carbide substrates

MATERIALS TODAY ADVANCES

IF8

2024-03-01

OAAI

Pedowitz, Michael; Lewis, Daniel; Demell, Jennifer; Pennachio, Daniel J.; Hajzus, Jenifer R.; -Ward, Rachael Myers; Kim, Soaram; Daniels, Kevin M.

Hexagonal Boron Nitride Slab Waveguides for Enhanced Spectroscopy of Encapsulated 2D Materials 用于封装2D材料增强光谱的六方氮化硼平板波导

ADVANCED MATERIALS

IF26.8

2023-12-07

PREAI

LaGasse, Samuel W.; Proscia, Nicholas V.; Cress, Cory D.; Fonseca, Jose J.; Cunningham, Paul D.; Janzen, Eli; Edgar, James H.; Pennachio, Daniel J.; Culbertson, James; Zalalutdinov, Maxim; Robinson, Jeremy T.

Magnetometry Based on Silicon-Vacancy Centers in Isotopically Purified 4H-SiC 基于同位素纯化的4H-SiC中硅空位中心的磁力测定

PHYSICAL REVIEW APPLIED

IF4.4

2023-04-27

OAAI

Lekavicius, I.; Carter, S. G.; Pennachio, D. J.; White, S.; Hazjus, J. R.; Purdy, A. P.; Gaskill, D. K.; Yeats, A. L.; Myers-Ward, R. L.

Orders of Magnitude Improvement in Coherence of Silicon-Vacancy Ensembles in Isotopically Purified 4H-SiC

PRX QUANTUM

IF11

2022-03-16

OAAI

Lekavicius, I; Myers-Ward, R. L.; Pennachio, D. J.; Hajzus, J. R.; Gaskill, D. K.; Purdy, A. P.; Yeats, A. L.; Brereton, P. G.; Glaser, E. R.; Reinecke, T. L.; Carter, S. G.

Real-time ultra-sensitive detection of SARS-CoV-2 by quasi-freestanding epitaxial graphene-based biosensor

BIOSENSORS & BIOELECTRONICS

IF10.5

2022-02-01

OAAI

Kim, Soaram; Ryu, Heeju; Tai, Sheldon; Pedowitz, Michael; Rzasa, John Robertson; Pennachio, Daniel J.; Hajzus, Jenifer R.; Milton, Donald K.; Myers-Ward, Rachael; Daniels, Kevin M.

Identifying the fingerprints of topological states by tuning magnetoresistance in a semimetal: The case of topological half-Heusler Pt1-xAuxLuSb

PHYSICAL REVIEW MATERIALS

IF3.4

2021-12-27

OAAI

Chatterjee, Shouvik; de Lima, Felipe Crasto; Logan, John A.; Fang, Yuan; Inbar, Hadass; Goswami, Aranya; Dempsey, Connor; Dong, Jason; Khalid, Shoaib; Brown-Heft, Tobias; Chang, Yu-Hao; Guo, Taozhi; Pennachio, Daniel J.; Wilson, Nathaniel; Chikara, Shalinee; Suslov, Alexey; Fedorov, Alexei, V; Read, Dan; Cano, Jennifer; Janotti, Anderson; Palmstrom, Christopher J.

Characterization of β-Ga2O3 homoepitaxial films and MOSFETs grown by MOCVD at high growth rates

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2020-10-28

PREAI

Tadjer, Marko J.; Alema, Fikadu; Osinsky, Andrei; Mastro, Michael A.; Nepal, Neeraj; Woodward, Jeffrey M.; Myers-Ward, Rachael L.; Glaser, Evan R.; Freitas, Jaime A.; Jacobs, Alan G.; Gallagher, James C.; Mock, Alyssa L.; Pennachio, Daniel J.; Hajzus, Jenifer; Ebrish, Mona; Anderson, Travis J.; Hobart, Karl D.; Hite, Jennifer K.; Eddy Jr., Charles R.

Mechanism for embedded in-plane self-assembled nanowire formation

PHYSICAL REVIEW MATERIALS

IF3.4

2020-06-17

OAAI

Wilson, Nathaniel S.; Kraemer, Stephan; Pennachio, Daniel J.; Callahan, Patrick; Pendharkar, Mihir; Palmstrom, Christopher J.

Quantized Majorana conductance (Expression of Concern of Vol 556, Pg 74, 2018)

NATURE

IF48.5

2020-04-29

OAAI

Zhang, Hao; Liu, Chun-Xiao; Gazibegovic, Sasa; Xu, Di; Logan, John A.; Wang, Guanzhong; van Loo, Nick; Bommer, Jouri D. S.; de Moor, Michiel W. A.; Car, Diana; Op Het Veld, Roy L. M.; van Veldhoven, Petrus J.; Koelling, Sebastian; Verheijen, Marcel A.; Pendharkar, Mihir; Pennachio, Daniel J.; Shojaei, Borzoyeh; Lee, Joon Sue; Palmstrom, Chris J.; Bakkers, Erik P. A. M.; Sarma, S. Das; Kouwenhoven, Leo P.

Selective-area chemical beam epitaxy of in-plane InAs one-dimensional channels grown on InP(001), InP(111)B, and InP(011) surfaces

PHYSICAL REVIEW MATERIALS

IF3.4

2019-08-26

OAAI

Lee, Joon Sue; Choi, Sukgeun; Pendharkar, Mihir; Pennachio, Dan J.; Markman, Brian; Seas, Micheal; Koelling, Sebastian; Verheijen, Marcel A.; Casparis, Lucas; Petersson, Karl D.; Petkovic, Ivana; Schaller, Vanessa; Rodwell, Mark J. W.; Marcus, Charles M.; Krogstrup, Peter; Kouwenhoven, Leo P.; Bakkers, Erik P. A. M.; Palmstrom, Chris J.

Valence-band offsets of CoTiSb/In0.53Ga0.47As and CoTiSb/In0.52Al0.48As heterojunctions

APPLIED PHYSICS LETTERS

IF3.6

2017-08-11

OAAI

Harrington, S. D.; Sharan, A.; Rice, A. D.; Logan, J. A.; McFadden, A. P.; Pendharkar, M.; Pennachio, D. J.; Wilson, N. S.; Gui, Z.; Janotti, A.; Palmstrom, C. J.

Spin injection and detection up to room temperature in Heusler alloy/n-GaAs spin valves

PHYSICAL REVIEW B

IF3.7

2016-12-30

OAAI

Peterson, T. A.; Patel, S. J.; Geppert, C. C.; Christie, K. D.; Rath, A.; Pennachio, D.; Flatte, M. E.; Voyles, P. M.; Palmstrom, C. J.; Crowell, P. A.

Limits to mobility in InAs quantum wells with nearly lattice-matched barriers

PHYSICAL REVIEW B

IF3.7

2016-12-14

OAAI

Shojaei, B.; Drachmann, A. C. C.; Pendharkar, M.; Pennachio, D. J.; Echlin, M. P.; Callahan, P. G.; Kraemer, S.; Pollock, T. M.; Marcus, C. M.; Palmstrom, C. J.

研究方向