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A quantum trap MONOS memory device using AlN
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DOI：10.1149/1.2208742.png)
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We report a IrO2-HfAlO-AlN-SiO2-Si MONOS device that displays excellent characteristics in terms of speed (100 mu s at +/- 13 V for program/erase) and memory window (3.7 V) at 85 degrees C operation. This device also shows good 10-year extrapolated data retention with a large 1.9 V window at 85 degrees C. The achieved performance compares well with the best reported memory device data. (c) 2006 The Electrochemical Society.
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3.3
论文数:
3.3W
被引数:
9.4W
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