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S

S. J. Wang

National Cheng Kung University

6H指数
19论文数
102被引数
收录论文 3
发表时间
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Effects of La2O3 Capping Layers Prepared by Different ALD Lanthanum Precursors on Flatband Voltage Tuning and EOT Scaling in TiN/HfO2/SiO2/Si MOS Structures
errJOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF3.3
err2011-01-01
err8
PREAI
errChiang, C. K.; Wu, C. H.; Liu, C. C.; Lin, J. F.; Yang, C. L.; Wu, J. Y.; Wang, S. J.
err分享
err收藏
A quantum trap MONOS memory device using AlN
errJOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF3.3
err2006-01-01
err3
PREAI
errLai, C. H.; Wu, C. H.; Chin, Albert; Wang, S. J.; McAlister, S. P.
err分享
err收藏
Observation of negative differential resistance phenomenon in a two-step barrier diode
errAPPLIED PHYSICS LETTERS
IF3.6
err1996-06-03
err8
PREAI
errWang, SJ; Lin, JC; Liou, WR; Lou, YC; Cheng, CY
err分享
err收藏

研究方向

暂时未获取到该数据
合作学者
合作期刊
C
Chyong‐Huey Lai
H 指数: 65 · 论文数: 557
A
Albert Chin
H 指数: 51 · 论文数: 651
J
Jen Fin Lin
H 指数: 37 · 论文数: 324
S
S. P. McAlister
H 指数: 30 · 论文数: 265
C
Chien‐Hung Wu
H 指数: 21 · 论文数: 182
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