S. P. McAlister - Publications, H-index & Citations

S. P. McAlister

National Research Council Canada

30H指数

265论文数

3.3K被引数

收录论文 10

发表时间

CONDITIONALLY ACTIVATABLE INTERFERON-ALPHA 2B IMPROVES TOLERABILITY AND EXHIBITS PREFERENTIAL ACTIVITY IN TUMORS

JOURNAL FOR IMMUNOTHERAPY OF CANCER

IF10.6

2022-11-07

OAAI

Berezhnoy, Alexey; Wang, Hsin; Lapuyade, Nicole; Cai, Na; LePage, Carol; Winter, Michael; Krimm, Michael; Wong, Kenneth; Ii, Robert Dunn; McAlister, Sean; Boustany, Leila; Paidhungat, Madan; Belvin, Marcia; Le Scolan, Erwan; Daniel, Dylan

A flexible organic pentacene nonvolatile memory based on high-κ dielectric layers

APPLIED PHYSICS LETTERS

IF3.6

2008-12-10

PREAI

Chang, Ming-Feng; Lee, Po-Tsung; McAlister, S. P.; Chin, Albert

Thermal leakage improvement by using a high-work-function ni electrode in high-κ TiHfO metal-insulator-metal capacitors

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2007-01-01

PREAI

Chiang, K. C.; Huang, C. C.; Pan, H. C.; Hsiao, C. N.; Lin, J. W.; Hsieh, I. J.; Cheng, C. H.; Chou, C. P.; Chin, A.; Hwang, H. L.; McAlister, S. P.

Comparison of InGaAs MOSFETs with germanium-on-insulator CMOS

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2006-08-01

PREAI

Chin, Albert; Chen, C.; Yu, D. S.; Kao, H. L.; McAlister, S. P.; Chi, C. C.

A quantum trap MONOS memory device using AlN

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2006-01-01

PREAI

Lai, C. H.; Wu, C. H.; Chin, Albert; Wang, S. J.; McAlister, S. P.

Reducing AC power consumption by three-dimensional integration of Ge-on-insulator CMOS on 1-poly-6-metal 0.18 μm Si MOSFETs

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2005-01-01

OAAI

Yu, DS; Liao, CC; Chen, CC; Lee, CF; Cheng, CF; Chin, A; McAlister, SP

Device level characterization for energy bandgap of strain-relaxed SiGe and oxide/SiGe barrier height

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2004-01-01

PREAI

Huang, CH; Yu, DS; Chin, A; Chen, WJ; McAlister, SP

Strong near-infrared photoluminescence and absorption from Si/Si1-xGex type-II multiple quantum wells on bulk crystal SiGe substrates

APPLIED PHYSICS LETTERS

IF3.6

2003-10-06

PREAI

Sheng, SR; Rowell, NL; McAlister, SP

Photoluminescence in tensile-strained Si type-II quantum wells on bulk single-crystal SiGe substrates

APPLIED PHYSICS LETTERS

IF3.6

2003-08-04

PREAI

Sheng, SR; Rowell, NL; McAlister, SP

Passivation of InGaAs surfaces and InGaAs/InP heterojunction bipolar transistors by sulfur treatment

APPLIED PHYSICS LETTERS

IF3.6

1998-08-03

PREAI

Driad, R; Lu, ZH; Charbonneau, S; McKinnon, WR; Laframboise, S; Poole, PJ; McAlister, SP

研究方向