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Design-Oriented Single-Piece 5-DC-Parameter MOSFET Model
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DOI：10.1109/ACCESS.2024.3417316.png)
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摘要
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This paper presents a novel charge-based MOSFET model, denoted ACM2, including velocity saturation and drain-induced barrier lowering. Employing the proposed model, all the DC characteristics (currents and charges) and the small-signal equations can be expressed as single-piece expressions valid in all inversion (weak, moderate, and strong) regions. When applied to bulk technology, ACM2 has 5 DC parameters, and an extra parameter is included for SOI technologies to account for back gate bias. Straightforward procedures are provided for extracting the short-channel parameters associated with velocity saturation and back gate bias. Experimental results demonstrate that the DC and small-signal characteristics of the ACM2 model match the silicon measurements in bulk and SOI technologies, with typical errors of less than 20 % in the DC currents and 30 % in the transconductances. The validity of the model is further verified with two design examples. Firstly, simulations of a CMOS inverter in a 130 nm bulk technology show similar results using the PSP or ACM2 models. Then, an RF design example is provided. The ACM2 model is employed to design a 2.4 GHz low-noise-amplifier in a 28 nm FD-SOI CMOS technology. Obtained results in terms of S-11, S-21, NF, and IIP3 are consistent with simulations using the complete UTSOI2 model provided in the technology design kit.
Keyword:
ACM model
design-oriented model
FD-SOI
MOSFET model
open-source PDK
inverter
RF LNA
期刊
IF:
3.6
论文数:
9.8W
被引数:
29.4W
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